Fujitsu Corporation

Eudyna Devices Inc.

Fujitsu Quantum Devices Limited

Takeshi Igarashi

Teruo Yokoyama

Tomonori Ishikawa

Masahisa Suzuki

Fumikazu Yamaki

A semiconductor device includes: a pad that is formed on a semiconductor layer, contains Al, and has an interconnection portion that is formed outside a bonding area; an interconnection layer that contains Au and is electrically connected to the interconnection portion of the pad, an edge of the interconnection layer being formed outside of the bonding area; and a barrier layer that is provided between the interconnection portion and the interconnection layer.

Semiconductor device with Al pad

A semiconductor device includes: a first FET that is formed with first unit FETs each having a first finger electrode and a second finger electrode provided on either side of a gate finger electrode, the first unit FETs being connected in parallel; and a second FET that is formed with second unit FETs each having a first finger electrode and a second finger electrode provided on either side of a gate finger electrode, the second unit FETs being connected in parallel. In this semiconductor device, the second finger electrode of each of the first unit FETs and the first finger electrode of each corresponding one of the second unit FETs form a common finger electrode, and the first finger electrodes of the first unit FETs, the second finger electrodes of the second unit FETs, and the common finger electrodes are arranged in the gate length direction of the first FET and the second FET.

Semiconductor device and method of manufacturing the same

A semiconductor device includes a compound semiconductor substrate having a resistivity less than 1.0&#xd7;10Ohm-cm at least at one surface thereof, a buffer layer formed on the compound semiconductor substrate and having a super lattice structure, and an active layer formed on the buffer layer and having an active element formed therein.

Semiconductor device with a super lattice buffer

A graphite filament for generating carbon molecular beam which is heated through application of a current thereto integrally comprises a plurality of portions of which current directions match the c-axis of the graphite and a plurality of portions of which current directions are perpendicular to the c-axis.

Graphite heater for molecular beam source of carbon

A semiconductor integrated circuit including therein a plurality of active devices comprises a semiconductor substrate, a first buffer layer on the substrate, a second buffer layer provided on the substrate and incorporating therein defects with a concentration level substantially larger than the concentration level of the defects in the first buffer layer; a device layer provided on the second buffer layer and being provided with the active devices, and a plurality of unconductive, device isolation regions formed between the active devices such that the device isolation region extends from an upper surface of the device layer toward the substrate at least beyond a lower surface of the device layer.

Semiconductor integrated circuit having a reduced side gate effect

A measured molecular beam intensity V.sub.i is converted into a value V.sub.iO at a reference temperature T.sub.O by calculating the following equation using the measured molecular beam intensity V.sub.i and a measured cell temperature T.sub.i : V.sub.iO =V.sub.i .multidot.exp(A(1/T.sub.O -1/T.sub.i)). Next, a molecular beam intensity V.sub.O (t) at a time (t) is estimated after the last conversion time based on the reference temperature T.sub.O in accordance with the converted molecular beam intensity V.sub.iO and a corresponding time t.sub.i thereof. Further, the temperature of a molecular beam source cell is controlled in accordance with an estimated cell temperature T.sub.SP (V.sub.SP), to realize a predetermined molecular beam intensity V.sub.SP, given by calculating the following equation using the estimated molecular beam intensity V.sub.O (t) and the predetermined molecular beam intensity V.sub.SP : T.sub.SP (V.sub.SP)=1/(1/T.sub.O +(log(V.sub.SP /V.sub.O (t)))/A).

Molecular beam epitaxial growth device and molecular beam control method

A measured molecular beam intensity V.sub.i is converted into a value V.sub.io at a reference temperature T.sub.O by calculating the following equation using the measured molecular beam intensity V.sub.i and a measured cell temperature T.sub.i : V.sub.io =V.sub.i .multidot.exp(A(1/T.sub.O -1/T.sub.i)). Next, a molecular beam intensity V.sub.O (t) at a time (t) is estimated after the last conversion time based on the reference temperature T.sub.o in accordance with the converted molecular beam intensity V.sub.io and a corresponding time t.sub.i thereof. Further, the temperature of a molecular beam source cell is controlled in accordance with an estimated cell temperature T.sub.SP (V.sub.SP), to realize a predetermined molecular beam intensity V.sub.SP, given by calculating the following equation using the estimated molecular beam intensity V.sub.O (t) and the predetermined molecular beam intensity V.sub.SP : T.sub.SP (V.sub.SP)=1/(1/T.sub.O +(log(V.sub.SP /V.sub.O (t)))/A).

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Yamanashi, Japan

Takeshi Igarashi