Nec Corporation

The Furukawa Electric Co., Ltd.

Other

Takeshi Hirayama

Hisashi Koaizawa

Masaru Hori

Tsuneo Suzuki

Sadayuki Toda

Michio Kondo

Kenkichi Suzuki

Kiyoshi Yase

Masao Fukuma

Imei Shu

An apparatus of removing coatings of a line-shaped body of the invention includes a non-equilibrium atmospheric pressure plasma source with radicals controlled, having a plasma generating gas, a microwave, a micro gap; a line-shaped body holding portion for holding the line-shaped body within a range of 2 to 3 mm from an electrode to generate a plasma jet; and a moving stage for relatively moving the line-shaped body in the longitudinal direction thereof.

Apparatus and method of removing coating of line-shaped body using plasma

A display device includes a first fiber having a silicon layer or an oxide layer, on which an active element is formed on the surface of the fiber and a second fiber forming a combined one-dimensional substrate together with the first fiber by being combined with the first fiber and having light emitting layers formed on a plurality of domains of the device. The first fiber and the second fiber are respectively drawn out from take-up jigs, are cut in necessary lengths and separated into plural fibers, and these plural first or second fibers are mounted in parallel with each other on a fixing jig. In this state, at least one-side elements of active elements and passive elements are formed on the first or second fibers.

Semiconductor device and display device using a one-dimensional substrate and device fabricating method thereof

In a semiconductor integrated circuit device, a MOS transistor has a relatively high built-in threshold, and in operation, a substrate bias is applied to the MOS transistor so as to cause the MOS transistor to forcibly have a reduced threshold, so that the MOS transistor operates at a high speed with the reduced threshold. When noise is detected, application of the substrate bias is stopped so that the MOS transistor restores the relatively high built-in threshold, and simultaneously, the MOS transistor is put in a standby condition, so that a malfunction can be prevented with the relatively high built-in threshold.

Semiconductor integrated circuit which prevents malfunctions caused by

The semiconductor IC according to this invention comprises an internal circuit including a plurality of transistors formed on a P-type or an N-type substrate (or a well) which carries out a prescribed signal processing operation during the time of operation mode, a standby detection circuit which generates a standby detection signal of active level by detecting standby mode, a bias potential generating circuit which generates a forward bias potential from the substrate (well) of the transistor to the source electrode, and a switching circuit which supplies to the substrate (well) the potential of the source electrode and the bias potential in response to the active level and the inactive level, respectively, of the standby detection signal. At the time of the operation mode, a high speed operation is secured by bringing the transistors to a low threshold voltage by receiving the supply of the bias potential, while at the time of the standby mode, the generation of malfunctions and defective data holding are prevented and the power consumption is saved by raising the threshold voltage of the transistors through a halt of supply of the bias voltage to the substrate (well).

Semiconductor integrated circuit incorporated with substrate bias

Growing community of inventors

Tokyo, Japan

Takeshi Hirayama