Ricoh Company, Ltd.

Takeshi Hino

Shunichi Sato

Naoto Jikutani

Akihiro Itoh

Kouichi Ohtaka

Masafumi Kumano

Yukito Sato

Mitsugu Irinoda

Toshihiro Hyodo

A disclosed surface emitting laser is capable of being manufactured easily, having a higher yield and a longer service lifetime. In the surface emitting laser, a selectively-oxidized layer is included as a part of a low refractive index layer of an upper semiconductor distribution Bragg reflector; the low refractive index layer including the selectively-oxidized layer includes two intermediate layers adjoining the selectively-oxidized layer and two low refractive index layers adjoining the intermediate layers. Al content rate in the intermediate layers is lower than that in the selectively-oxidized layer, and Al content rate in the low refractive index layers is lower than that in the selectively-oxidized layer. This configuration enables providing more control over the thickness and oxidation rate of the oxidized layer, thereby enabling reducing the variation of the thickness of the oxidized layer.

Surface emitting laser, surface emitting laser array, optical scanning device, image forming apparatus, optical transmission module and optical transmission system

A photonic crystal comprises a matrix constituting said three-dimensional periodic structure, a first lattice formed in said matrix by first spherical voids having a uniform first diameter, said first spherical voids forming a face-centered cubic lattice, and a second lattice formed in said matrix by second spherical voids having a uniform second diameter smaller than said first diameter, said second spherical voids occupying interstitial sites of said first spherical voids.

Three-dimensional periodic structure and fabrication method thereof

A semiconductor manufacturing process simulation apparatus using a diffusion model in which a dislocation loop generated in a crystalline substrate during an ion implantation process of a semiconductor manufacturing process is considered with respect to a diffusion in a heat treatment process subsequent to the ion implantation process. An ion implantation process simulating part simulates an ion implantation process. A model generating part generates a diffusion model in which contribution of dislocation loops is considered, the dislocation loops being formed in the substrate during the ion implantation process. A heat treatment process simulating part simulates a heat treatment process subsequent to the ion implantation process, the diffusion model generated by the model generating part being used for simulating diffusion of impurities in the substrate during the heat treatment process. A pressure field generated by the dislocation loops in the substrate is defined in the diffusion model by a function of a distance from a layer in which the dislocation loops are formed.

Semiconductor manufacturing process simulation apparatus for calculating

An apparatus for zone melting a thin semiconductor film comprises an first laser for heating the thin semiconductor film, at least one additional laser for heating an insulating substrate, a first temperature detecting device for detecting the temperature of a melted portion of the thin semiconductor film, and a second temperature detecting device for detecting the temperature of a solidified portion of the thin semiconductor film. The apparatus further comprises a first controller for controlling an output of the first laser so as to maintain the temperature of the melted portion in a first predetermined temperature range, and a second controller for controlling an output of the additional laser so as to maintain the temperature of the solidified portion in a second predetermined temperature range.

Growing community of inventors

Miyagi, Japan

Takeshi Hino