Sharp Kabushiki Kaisha Corporation

Takeshi Hieda

Kenji Kimoto

Yuta Matsumoto

Chikao Okamoto

Junichi Nakamura

Naoki Koide

Masamichi Kobayashi

Hiroaki Shigeta

Kenichi Higashi

Naoki Asano

There is provided a photoelectric conversion element which can prevent the contact resistance between a non-crystalline semiconductor layer containing impurities and an electrode formed on the non-crystalline semiconductor layer from increasing, and can improve the element characteristics. A photoelectric conversion element () includes a semiconductor substrate (), a first semiconductor layer (), a second semiconductor layer (), a first electrode (), and a second electrode (). The first semiconductor layer () has a first conductive type. The second semiconductor layer () has a second conductive type opposite to the first conductive type. The first electrode () is formed on the first semiconductor layer (). The second electrode () is formed on the second semiconductor layer (). At least one electrode of the first electrode () and the second electrode () includes a plurality of metal crystal grains. The average crystal grain size of the metal crystal grains in the in-surface direction of electrode is greater than the thickness of the electrode.

Photoelectric conversion element, photoelectric conversion module, and solar photovoltaic power generation system

A photovoltaic element includes: a semiconductor substrate; a first i-type semiconductor film provided on a part of one of surfaces of the semiconductor substrate; a first semiconductor region including a first-conductivity-type semiconductor film provided on the first i-type semiconductor film; a first electrode layer provided on the first semiconductor region; a first conductive film interposed at least at a site between the first semiconductor region and the first electrode layer.

Photovoltaic element

Provided are a photoelectric conversion element capable of enhancing characteristics and reliability more than ever before and a method for manufacturing the photoelectric conversion element. The photoelectric conversion element includes a base including a semiconductor substrate, a first i-type semiconductor film placed on a portion of a surface of the semiconductor substrate, a first conductivity-type semiconductor film placed on the first i-type semiconductor film, a second i-type semiconductor film placed on another portion of the surface thereof, and a second conductivity-type semiconductor film placed on the second i-type semiconductor film; an electrode section including a first electrode layer placed on the first conductivity-type semiconductor film and a second electrode layer placed on the second conductivity-type semiconductor film; and a reflective section placed in a gap region A interposed between the first electrode layer and the second electrode layer.

Photoelectric conversion element

Growing community of inventors

Sakai, Japan

Takeshi Hieda