Tokyo Electron Limited

Renesas Technology Corp.

Takeshi Hayashi

Tomonori Okudaira

Kiyoteru Kobayashi

Hiroshi Fujiwara

Yasushi Fujita

A manufacturing method of a semiconductor device including a TiN film, including a deposition step of forming a TiN film by the CVD method, an anneal step of performing a heat treatment to the formed TiN film in an atmosphere of NHgas, an NHgas purge step of purging NHgas, and a step of further repeating the deposition step, the anneal step, and the NHgas purge step for at least one time. The deposition step is performed using titanium halide gas and NHgas as material gases and with a deposition temperature of 300&#xb0; C.-450&#xb0; C. to form the TiN film by a thickness of 1 nm-5 nm for each deposition step. Thus, a semiconductor device in which generation of irregularly grown objects in the TiN film is suppressed and a manufacturing method thereof can be provided.

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Hyogo, Japan

Takeshi Hayashi