Renesas Electronics Corporation

Nec Corporation

Takeshi Hayashi

Takuya Futase

Shuhei Murata

Kentaro Kita

Koji Ikuta

This invention is directed to a communication processing apparatus that secures a safe connection from a non-IP-connection device to an IP-connection cloud (server). This communication processing apparatus includes a first connection unit that connects devices, a second connection unit that connects to servers, a switching unit that switches connections of the devices and the servers between the first connection unit and the second connection unit, a determiner that determines whether connection of a device to the first connection unit is permitted or unpermitted, and a connection controller that controls the switching unit in accordance with a determination result from the determiner.

Securing a connection from a device to a server

Communication processing system, communication processing method, communication processing apparatus, communication managing apparatus, and control methods and control programs of communication processing apparatus and communication managing apparatus

A communication system () includes a communication apparatus () and a communication control apparatus (). The communication apparatus () includes a packet receiving unit () for receiving a packet, a packet processing unit () for processing the packet matching with a predetermined condition by a method associated with the condition, and a Packet-in transmission unit () for transmitting a first notification when the packet does not match with the condition. The communication control apparatus () includes a packet-in receiving unit () for receiving the first notification, and a communication limit instruction unit () for limiting the reception of the packet at the packet receiving unit () when an index based on the number of times of reception of the first notification satisfies a first condition.

Communication system, communication method, and non-transitiory computer readable medium storing program

As a barrier metal film, a titanium film is formed by a sputtering process, and a titanium nitride film is formed to cover the titanium film by a CVD process. Next, the back surface of a semiconductor substrate is cleaned by spraying a cleaning chemical liquid toward the back surface thereof, and a portion of the barrier metal film located in the outer peripheral portion is removed by causing the cleaning chemical liquid to wrap around toward the surface side of the outer peripheral portion from the back surface side. Next, a tungsten film is formed to cover the barrier metal film by a CVD process.

Manufacturing method of semiconductor device

When a natural oxide film is left at the interface between a metal silicide layer and a silicon nitride film, in various heating steps (steps involving heating of a semiconductor substrate, such as various insulation film and conductive film deposition steps) after deposition of the silicon nitride film, the metal silicide layer partially abnormally grows due to oxygen of the natural oxide film occurring on the metal silicide layer surface. A substantially non-bias (including low bias) plasma treatment is performed in a gas atmosphere containing an inert gas as a main component on the top surface of a metal silicide film of nickel silicide or the like over source/drain of a field-effect transistor forming an integrated circuit. Then, a silicon nitride film serving as an etching stop film of a contact process is deposited. As a result, without causing undesirable cutting of the metal silicide film, the natural oxide film over the top surface of the metal silicide film can be removed.

Method for manufacturing a semiconductor integrated circuit device

An object of the invention is to avoid an inconvenience at a connection portion formed by filling a metal film in a connecting hole, which has been opened in an insulating film, via a barrier metal film having a titanium nitride film stacked over a titanium film. A manufacturing method of a semiconductor device has the steps of: forming a thermal reaction Ti film over the bottom of a connecting hole by a thermal reaction using a TiClgas; forming a plasma reaction Ti film by a plasma reaction using a TiClgas; forming a nitrogen-rich TiN film over the surface of the plasma reaction Ti film by plasma treatment with Hand plasma treatment with NHgases; repeatedly carrying out film formation by CVD using a WFgas and reduction using an SiHor BHgas to form a tungsten nucleation film of a multilayer structure over the nitrogen-rich TiN film; and forming a blanket&#x2022;tungsten film at 400&#xb0; C. or less by CVD using WFand Hgases. This makes it possible to avoid an inconvenience at a connection portion formed by filling a metal film in a connecting hole, which has been opened in an insulating film, via a barrier metal film having a titanium nitride film stacked over a titanium film.

Growing community of inventors

Tokyo, Japan

Takeshi Hayashi