Ricoh Company, Ltd.

Phc Holdings Corporation

Takeshi Hatakeyama

Hisashi Minemoto

Osamu Yamada

Kouichi Hiranaka

Yasuo Kitaoka

Fumio Kawamura

Takatomo Sasaki

Yusuke Mori

Akihito Shirai

Hiroaki Hoshikawa

Yasunori Tokunou

Kazuya Kakutani

Jisashi Minemoto

The present disclosure provides an electrode substrate including an insulating substrate having, on a surface thereof, a region where at least one fine uneven structure is formed and a plurality of smooth regions separated by the fine uneven structure; and a conductive thin film formed on the entire of at least one surface of the insulating substrate where the fine uneven structure is formed. According to the present disclosure, the conductive region and the insulating region can be simultaneously formed on the insulating substrate only by forming the conductive thin film in a single step on the entire surface of the single insulating substrate on which the fine uneven structure is formed.

Electrode substrate, method for manufacturing same, and biosensor using electrode substrate

A group III element nitride single crystal is grown on a template immersed in a raw material liquid retained in a crucible and containing a group III material and one of an alkali metal and an alkali earth metal. The raw material liquid remaining after the growth of the single crystal is cooled and solidified, and by feeding a hydroxyl group-containing solution into the crucible, the solidified raw material is removed from around the template, and thus the group III element nitride single crystal is taken out from inside the solidified raw material. The template is disposed at a position away from the bottom of the crucible.

Process for producing group III element nitride crystal and apparatus for producing group III element nitride crystal

When a group III nitride crystal is grown in a pressurized atmosphere of a nitrogen-containing gas from a meltincluding at least a group III element, nitrogen and an alkali metal or an alkali earth metal, a melt-holding vesselthat holds the above-described meltis swung about two axes different in direction from each other such as an X-axis and a Y-axis.

Group III nitride crystal, method for growing the group III nitride crystal, and apparatus for growing the same

A method for producing a high-quality group-III element nitride crystal at a high crystal growth rate, and a group-III element nitride crystal are provided. The method includes the steps of placing a group-III element, an alkali metal, and a seed crystal of group-III element nitride in a crystal growth vessel, pressurizing and heating the crystal growth vessel in an atmosphere of nitrogen-containing gas, and causing the group-III element and nitrogen to react with each other in a melt of the group-III element, the alkali metal and the nitrogen so that a group-III element nitride crystal is grown using the seed crystal as a nucleus. A hydrocarbon having a boiling point higher than the melting point of the alkali metal is added before the pressurization and heating of the crystal growth vessel.

Group-III element nitride crystal producing method and group-III element nitride crystal

Growing community of inventors

Ehime, Japan

Takeshi Hatakeyama