Denso Corporation

Takeshi Hasegawa

Yoshiyuki Hisada

Eiichi Okuno

Tomohiro Aoyama

Shinichi Mukainakano

Ayahiko Ichimiya

Kiyoshige Kato

In a method of fabricating a SiC semiconductor device, a surface of a SiC layer () is processed into a cleaned surface terminated at Si. An oxide film () is formed on the cleaned surface of the SiC layer. The SiC layer with the oxide film is subjected to thermal oxidation at a temperature in a range of 700&#xb0; C. to 900&#xb0; C. so that only terminal Si at the cleaned surface of the SiC layer is oxidated and an interface between the oxide film and the SiC layer becomes an SiO/SiC cleaned interface.

Method of fabricating SiC semiconductor device

In a process of producing a SiC device, a Si layer is formed on the surface of a SiC substrate, and the Si layer is removed from the surface of the SiC substrate by supplying oxygen gas to the Si layer in a high ambient temperature and a low ambient pressure. The pressure is set at 1&times;10 to 1&times;10 Pa. Thus a cleaned surface of the SiC substrate, not contaminated by carbon and the like in atmospheric air, can be provided. Preferably, the oxygen pressure and temperature are set at about 10 Pa and 1000&deg; C. for removing the Si layer. Thereafter, the oxygen is further supplied to raise the pressure to about 10 Pa to form an oxide film on the cleaned SiC substrate. Thus, the SiC substrate is cleaned and then formed with the oxide layer in the same chamber by changing the ambient pressure but without changing the ambient temperature.

Method of producing silicon carbide device by cleaning silicon carbide substrate with oxygen gas

Growing community of inventors

Aichi-ken, Japan

Takeshi Hasegawa