Adv Antest Corporation

The University of Tokyo

Chiba University

Genedesign, Inc.

Canon Kabushiki Kaisha

Denki Kagaku Kogyo Kabushiki Kaisha

Nof Corporation

Takeshi Haraguchi

Hiroshi Yasuda

Yoshihisa Ooae

Hideo Iba

Shinichi Hamaguchi

Tomohiko Abe

Takamasa Satoh

Hirokazu Nankai

Hideaki Sato

Hitoshi Tanaka

Masahiko Okunuki

Hiroya Ohta

Norio Saito

Yoshinori Terui

Sayaka Tanimoto

Ryozo Nonogaki

Ryoji Kato

Masaki Takakuwa

Seiichi Sakawa

Yoichi Shimizu

Hidekazu Murata

Hiroshi Shimoyama

Kazuto Ashiwara

Provided is a novel technique for treating cancer using structurally-reinforced S-TuD. Provided are: a composition for the prevention or treatment of tumors, said composition comprising an miRNA inhibitory complex including RNA of analog thereof; and a method for preventing or treating tumors using said composition. The miRNA inhibitory complex preferably includes at least one double-stranded structure and an miRNA-binding sequence. Two strands of the miRNA binding sequence preferably bind individually to two strands on at least one end of the double-stranded structure. According to some of the aspects of the present invention, there is provided a delivery system for delivering such an miRNA inhibitory complex.

Technique for treating cancer using structurally-reinforced S-TuD

Tumor growth was found to be significantly suppressed in vivo by inhibiting both miRNA containing 5'-AACACUG-3&#x2032; as a seed sequence and miRNA containing 5&#x2032;-AAUACUG-3&#x2032; as a seed sequence. The inhibition significantly altered the proportion of subpopulations of tumor cells and reduced the tumorigenicity in all subpopulations. The inhibition also exerted a remarkable tumor-shrinking effect on already-formed tumors. The present invention provides novel therapeutic potential against tumor.

Method for suppressing tumors by miR-200 family inhibition

The present invention pertains to the improvement of a miRNA inhibitor (a synthesized Tough Decoy (S-TuD)). The present invention provides a miRNA inhibitory complex including RNA or an analog thereof, wherein the RNA inhibitory complex includes at least one double-stranded structure and a miRNA binding sequence, each of two strands of the miRNA binding sequence being bound to two strands of at least one end of the double-stranded structure, and the miRNA inhibitory complex further includes at least one crosslinked nucleic acid.

Structurally-enhanced miRNA inhibitor S-TuD

A miRNA-inhibiting RNA complex has a double-stranded structure, in which at least one RNA strand that includes a miRNA-binding sequence is linked to the two strands at at least one end of the double-stranded structure. The complex can efficiently inhibit miRNAs. In particular, RNAs in which two RNAs containing a miRNA binding sequence are positioned between two double-stranded structures were able to strongly inhibit miRNA. These RNAs can be expressed from, for example, a PolIII promoter, and by integration into a vector, miRNAs can be stably inhibited for a long period of time.

Method for inhibiting function of micro-RNA

A multi-column electron beam exposure apparatus includes: multiple column cells; an electron beam converging unit in which two annular permanent magnets and electromagnetic coils are surrounded by a ferromagnetic frame, the two annular permanent magnets being magnetized in an optical axis direction and symmetrical about the optical axis, where the electromagnetic coils adjust magnetic fields of the annular permanent magnets; and a substrate provided with circular apertures through which electron beams used in the column cells pass, respectively, where the electron beam converging unit is disposed in each of the circular apertures. The two annular permanent magnets may be disposed one above the other in the optical axis direction, and the electromagnetic coils may be provided inside or outside the annular permanent magnets in their radial direction.

Multi-column electron beam exposure apparatus and magnetic field generation device

An electron gun includes: an electron source; an accelerating electrode; an extraction electrode for extracting electrons from an electron emission surface of the electron source; a suppressor electrode for suppressing emission of electrons from a side surface of the electron source; and an electron beam converging unit for converging an electron beam of thermal field emission electrons emitted from the electron emission surface by applying an electric field to the electron emission surface. The electron beam converging unit is an electrostatic lens electrode which is placed between the extraction electrode and the accelerating electrode and having an opening portion in its center. A voltage is applied to the electrostatic lens electrode to converge the electron beam.

Electron gun minimizing sublimation of electron source and electron beam exposure apparatus using the same

An electron gun includes an electron source configured to emit electrons. The electron source includes an electron emission region configured to emit the electrons and an electron emission restrictive region configured to restrict emission of the electrons. The electron emission restrictive region is located on a side surface of the electron source except an electron emission surface on a tip of the electron source and is covered with a different material from the electron source. The electron gun emits thermal field-emitted electrons by applying an electric field to the tip while maintaining a sufficiently low temperature to avoid sublimation of a material of the electron source. The material of the electron source may be lanthanum hexaboride (LaB) or cerium hexaboride (CeB). The electron emission restrictive region may be covered with carbon.

Electron gun, electron beam exposure apparatus, and exposure method

A mask inspection apparatus includes: an electron gun for generating an electron beam; an exposure mask for shaping the electron beam into a predetermined cross-sectional shape; means for scanning the electron beam shaped by the exposure mask; means for selecting and transmitting part of the shaped electron beam, which selecting means includes a thin film having a small transmission aperture transmitting the electron beam scanned by the scanning means and includes a thick substrate having an opening larger than the small transmission aperture and a thickness greater than that of the thin film; and means for detecting the electron beam passed through the selecting means and outputting a current signal. The detecting means includes: a reflective body for reflecting the electron beam selected by the selecting means; and a detector for detecting the electron beam reflected by the reflective body.

Mask inspection apparatus, mask inspection method, and electron beam exposure system

This invention provides a multielectron gun which generates a plurality of electron beams having uniform characteristics. A multielectron gun () is formed of a plurality of electron guns (). The electron gun () has, in addition to an electron source (), Wehnelt electrode (), and anode electrode (), a shield electrode () between the Wehnelt electrode () and anode electrode (). The shield electrode reduces field interference among the electron guns.

Multibeam generating apparatus and electron beam drawing apparatus

An electron beam exposure apparatus for exposing a pattern to a wafer by a plurality of electron beams, comprising an electron beam generating section for generating a plurality of electron beams, a deflecting section having a plurality of deflectors for deflecting the plurality of electron beams, and a screening section having a first screen electrode disposed between the plurality of deflectors and extending from a position close to the electron beam generating section from one end of the deflector to a position close to the wafer from one end of the deflector along the direction of radiation of electron beams.

Electron beam exposure apparatus and electron beam deflection apparatus

An electron beam exposure apparatus for exposing a wafer includes: a multi-axis electron lens operable to converge a plurality of electron beams independently of each other; and a lens-intensity adjuster including a substrate provided to be substantially parallel to the multi-axis electron lens, and a lens-intensity adjusting unit operable to adjust the lens intensity of the multi-axis electron lens applied to the electron beams passing through the lens openings, respectively.

Multi-beam exposure apparatus using a multi-axis electron lens, fabrication method of a semiconductor device

An electron beam exposure system for exposing a pattern on a wafer using a plurality of electron beams, comprising a section for generating a plurality of electron beams, an electron lens section having a plurality of apertures for passing a plurality of electron beams and focusing the plurality of electron beams independently, and a magnetic field formation section provided at least one of the plurality of apertures and forming a magnetic field in a direction substantially perpendicular to the irradiating direction of an electron beam passing through the aperture.

Electron beam exposure system and electron lens

A semiconductor device manufacturing system for manufacturing a semiconductor device on a wafer, comprising: a first exposure apparatus for exposing the wafer using a light source while moving the wafer with a predetermined interval; and a second exposure apparatus for exposing the wafer by irradiating a plurality of electron beams on the wafer, the plurality of electron beams having an interval of substantially N times or 1/N times, where N is a natural number, of the predetermined interval.

Semiconductor device manufacturing system and electron beam exposure apparatus

An electron beam generating apparatus for generating a plurality of electron beams, which includes: a plurality of cathodes for generating thermoelectrons; a cathode power supply unit for applying negative voltage to the cathodes so as to emit the thermoelectrons from the cathodes; a plurality of grids, which correspond to the plurality of cathodes respectively, for focusing the thermoelectrons emitted from each of the plurality of cathodes, and shaping the plurality of electron beams; and an insulator on which the plurality of cathodes and the plurality of grids are attached.

Electron beam generating apparatus and electron beam exposure apparatus

An electron beam exposure apparatus for exposing a wafer with a plurality of electron beams includes a multi-axis electron lens having a plurality of lens openings operable to converge the electron beams independently of each other, the plurality of lens openings having different shapes.

Multi-beam exposure apparatus using a multi-axis electron lens, electron lens convergencing a plurality of electron beam and fabrication method of a semiconductor device

Growing community of inventors

Tokyo, Japan

Takeshi Haraguchi