Fujifilm Corporation

Takeshi Hama

Atsushi Tanaka

Masayuki Suzuki

Yuki Inoue

Aya Ouchi

Noboru Komori

Shinichi Kanna

Yujiro Yanai

Takeyoshi Kano

Takashi Aridomi

Yusuke Hatanaka

Fumihiko Mochizuki

Naoki Koito

Shiki Ueki

Yuichi Hayata

AKi Nakamichi

Aki Nakamichi

A test container including: at least two accommodation portions each accommodating a liquid and internally provided; a flow path connecting the two accommodation portions to each other at respective upper end positions thereof internally provided; and a flexible film deformable inwards of at least one accommodation portion at a portion forming an upper wall surface of the one accommodation portion, in which the liquid accommodated in the one accommodation portion is fed to the other accommodation portion via the flow path due to deformation of the flexible film towards the one accommodation portion, and a breaking elongation of the flexible film is 100% or more and 600% or less.

Test container for examination

A test container includes a container main body including a first-accommodation-portion, a second-accommodation-portion, and a third-accommodation-portion each accommodating a liquid and internally provided, a first flow path connecting the first-accommodation-portion and the second-accommodation-portion to each other at respective upper end positions thereof and internally provided, and a second flow path connecting the second-accommodation-portion and the third-accommodation-portion to each other at respective upper end positions thereof and internally provided, in which at least a portion forming an upper wall surface of the second-accommodation-portion has flexibility to be deformable inwards of the second-accommodation-portion; and a liquid return prevention structure which prevents a backflow of the liquid to the first-accommodation-portion, when the liquid accommodated in the second-accommodation-portion is fed to the third-accommodation-portion via the second flow path due to deformation of the portion forming the upper wall surface of the second-accommodation-portion inwards of the second-accommodation-portion.

Provided are a decorative film including, in the following order, a temporary support, a colored layer, a cholesteric liquid crystal layer, and a protective layer, in which the decorative film is a film for viewing the colored layer through the cholesteric liquid crystal layer; a decoration method or a method for manufacturing a decorative molded article; and a decorative molded film including, in the following order, a base material, a colored layer, a cholesteric liquid crystal layer, and a protective layer, or including, in the following order, a colored layer, a cholesteric liquid crystal layer, a base material, and a protective layer, in which the decorative molded film is a film for viewing the colored layer through the cholesteric liquid crystal layer.

Decorative film, decoration method, method for manufacturing decorative molded article, and decorative molded film

Provided are a film-forming composition containing a hydrolysate of a siloxane compound represented by Formula (1), silica particles, a ketone-based solvent, and water, and a manufacturing method of a laminate. In Formula (1), R, R, R, and Reach independently represent a monovalent organic group having 1 to 6 carbon atoms. n represents an integer of 2 to 20. 

Film-forming composition and manufacturing method of laminate

A method for producing a multilayer substrate involves: a base-material pretreatment step in which a hole forming step and a metal adhesion step are performed in no particular order, the hole forming step being a step of subjecting a core base material having at least an insulating layer and a first metal layer to a hole opening process, the metal adhesion step being a step in which a predetermined metal or metal ion is made to adhere to the other surface of the insulating layer; a desmearing step of performing desmearing by plasma etching; a cleaning step of cleaning the core base material by using an acidic solution; and a plating step of applying a plating catalyst or a precursor thereof onto the insulating layer and performing plating.

Method for producing multilayer substrate and desmearing method

There is provided an amorphous oxide semiconductor material including an amorphous oxide semiconductor including In, Ga and Zn, wherein when In:Ga:Zn=a:b:c denotes an element composition ratio of the oxide semiconductor, the element composition ratio is defined by the range of a+b=2 and b&#x3c;2 and c&#x3c;4b&#x2212;3.2 and c&#x3e;&#x2212;5b+8 and 1&#x2266;c&#x2266;2.

Amorphous oxide semiconductor material, field-effect transistor, and display device

An optical sensor that is a transistor which includes a gate electrode including a semiconductor material where the carrier concentration is 1.0&#xd7;10/cmto 1.0&#xd7;10/cm, an active layer including a semiconductor layer to form a channel by carriers of the same type as the gate electrode, a source electrode, a drain electrode, and a gate insulating film, wherein intensity of irradiated light is detected by a change in a value of current flowing between the source electrode and the drain electrode when the light is irradiated onto a depletion layer formed in the gate electrode; an optical sensor array, an optical sensor driving method, and an optical sensor array driving method are provided.

Optical sensor, optical sensor array, optical sensor driving method, and optical sensor array driving method

A thin film transistor includes: a substrate; and, on the substrate, an oxide semiconductor film which serves as an active layer and contains In, Ga, and Zn, a gate electrode, a gate insulating film, a source electrode, and a drain electrode, wherein, when a molar ratio of In, Ga, and Zn in the oxide semiconductor film is expressed as In:Ga:Zn=(2.0&#x2212;x):x:y, wherein 0.0&#x3c;x&#x3c;2.0 and 0.0&#x3c;y, the distribution of y in the thickness direction of the oxide semiconductor film is such that the oxide semiconductor film has a region at which a value of y is larger than that at a surface of the oxide semiconductor film at a side closer to the substrate and that at a surface of the oxide semiconductor film at a side farther from the substrate.

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Kanagawa, Japan

Takeshi Hama