Renesas Electronics Corporation

Hitachi, Ltd.

Renesas Technology Corp.

Other

Acacia Research Group LLC

Takeshi Furusawa

Masazumi Matsuura

Noriko Miura

Kinya Goto

Shuntaro Machida

Daisuke Ryuzaki

Masahiro Matsumoto

Daisuke Kodama

Hiroshi Miyazaki

Noriyuki Sakuma

Kenji Hinode

Takao Kumihashi

Ryou Yoneyama

Tetsuya Nagata

Katsuhiko Hotta

Yoshio Homma

Shigeo Moriyama

Yoshio Kawamura

Toshikazu Matsui

Nobuhito Matsuyama

Kikuo Kusukawa

Takayuki Muranaka

Masakazu Okada

Tatsuo Kanetake

Naohito Suzumura

Takuro Homma

Takao Kamoshima

Shoichi Fukui

Masatsugu Amishiro

A semiconductor device including a low dielectric constant film of which the relative dielectric constant is less than 3.5, is provided with one or more seal rings that are moisture blocking walls forming a closed loop in a plan view, and where at least one of the seal rings includes a seal ring protrusion portion in inward protruding form in the vicinity of a chip corner.

Semiconductor chip with seal ring and sacrificial corner pattern

Provided is a technique capable of improving the reliability of a semiconductor device having a slit made over a main surface of a semiconductor substrate, so as to surround each element formation region. In the technique, a second passivation film covers the side surface of an opening made to make the upper surface of a sixth-layer interconnection Mused for bonding pads naked, and the inner walls (the side surfaces and the bottom surface) of a slit made to surround the circumference of a guard ring and made in a first passivation film, an insulating film for bonding, and an interlayer dielectric, so as to cause the bottom thereof not to penetrate through a barrier insulating film.

Semiconductor device having trench-isolated element formation region

The reliability of a semiconductor device having an embedded wire in the lowest layer wire is improved. In a main surface of a semiconductor substrate, MISFETs are formed and over the main surface, insulating filmsare formed. In the insulating filmsa contact hole is formed and a plug is embedded therein. Over the insulating filmin which the plug is embedded, insulating filmsare formed and an opening is formed in the insulating filmsand a wire is embedded therein. The insulating filmis an etching stopper film when etching the insulating filmin order to form the opening, containing silicon and carbon. The insulating filmhas a high hygroscopicity and the insulating filmhas a low moisture resistance, however, by interposing the insulating filmtherebetween and making the insulating filmhave a higher density of the number of Si (silicon) atoms than that of the insulating film, an electrically weak interface is prevented from being formed.

Semiconductor device having metal contacts formed in an interlayer dielectric film comprising four silicon-containing layers

To provide a semiconductor device having a structure in which a barrier metal film containing nitrogen is formed in a connection surface between a copper alloy wiring and a via, in which the electric resistance between the copper alloy wiring and the via can be prevented from rising, and the electric resistance can be prevented from varying. A semiconductor device according to the present invention comprises a first copper alloy wiring, a via and a first barrier metal film. The first copper alloy wiring is formed in an interlayer insulation film and contains a predetermined additive element in a main component Cu. The via is formed in an interlayer insulation film and electrically connected to the upper surface of the first copper alloy wiring. The first barrier metal film is formed so as to be in contact with the first copper alloy wiring in the connection part between the first copper alloy wiring and the via and contains nitrogen. The predetermined additive element reacts with nitrogen to form a high-resistance part. In addition, the concentration of the predetermined additive element is not more than 0.04 wt %.

Semiconductor device and manufacturing method of semiconductor device

A semiconductor device according to the invention is a semiconductor device which includes a low dielectric constant film of which the relative dielectric constant is less than 3.5, is provided with one or more seal rings that are moisture blocking walls in closed loop form in a plan view, and where at least one of the seal rings includes a seal ring protrusion portion in inward protruding form in the vicinity of a chip corner.

In a semiconductor having a multilayer wiring structure device on a semiconductor substrate, the multilayer wiring structure includes an interlayer insulating film having at least an organic siloxane insulating film. The organic siloxane insulating film has a relative dielectric constant of 3.1 or less, a hardness of 2.7 GPa or more, and a ratio of carbon atoms to silicon atoms between 0.5 and 1.0, inclusive. Further, the multilayer wiring structure may include an insulating layer having a ratio of carbon atoms to silicon atoms not greater than 0.1, the insulating layer being formed on the top surface of the organic siloxane insulating film as a result of carbon leaving the organic siloxane insulating film.

Semiconductor device and manufacturing method therefor

Semiconductor device with seal ring

Each routing unit of the network routing apparatus includes: one or a plurality of transfer means each for extracting a packet header of a packet received from a line, and one or a plurality of search means each for extracting output destination information using the packet header received from each transfer means; wherein, in each routing unit, one search means is connected to one transfer means, or a plurality of transfer means are connected to one search means, or a plurality of search means are connected to one transfer means, or a plurality of search means and a plurality of transfer means are connected to one another.

Network routing apparatus

Disclosed is a semiconductor device having a dielectric film of a stacked structure, comprising a low dielectric constant film containing silicon, oxygen and carbon a modified layer for the low dielectric constant film containing silicon, oxygen, carbon and fluorine and a dielectric protection film formed successively on a semiconductor substrate, the semiconductor device being manufactured by applying a plasma treatment using a fluorine-containing gas to the surface of an organic siloxane film to form a modified layer and then forming a dielectric protection film, which can improve the adhesivity with the dielectric protection film without increasing the dielectric constant of the organic siloxane film to prevent delamination.

Semiconductor device having low-K insulating film

Semiconductor manufacturing method for low-k insulating film

An intermetal insulating film containing at least silicon atoms, oxygen atoms and carbon atoms with the number ratio of oxygen atom to silicon atom being 1.5 or more and the number ratio of carbon atom to silicon atom being 1 to 2, and having a film thickness shrinkage at a time of oxidation of 14% or less is very low in dielectric constant, high in selectivity against resist etching and can be used without using a silicon oxide protective film in a semiconductor device.

Semiconductor device and process for producing the same

Growing community of inventors

Tokyo, Japan

Takeshi Furusawa