Hitachi, Ltd.

Hitachi Ulsi Engineering Corp.

Hitachi, Vlsi Eng. Corp.

Takeshi Fukazawa

Shuji Ikeda

Osamu Takahashi

Keiichi Yoshizumi

Makoto Saeki

Hiroshi Fukuta

Hisae Yamamura

Satoru Haga

Kiyoshi Nagai

Tadashi Abe

Kiichi Makuta

Takao Ohkubo

Hiroshi Tachimori

An increase in the GND resistance and a drop in the resistance against electromigration are minimized when the ground voltage lines for shunting are finely constituted by using an Al wiring of the same layer as the pad layer, owing to the employment of a layout in which the arrangement of connection holes 24, 26 in a pad layer connected to one (data line) of the complementary data lines and the arrangement of connection holes in a pad layer connected to the other one (data line bar) of the complementary data lines, are inverted from each other every two bits of memory cells in the SRAM along the direction in which the complementary data lines extend.

Semiconductor integrated circuit device

In case an address is to access a defective memory cell, a defective memory cell in a memory cell area contained in one of paired memory mats is selected in parallel with a redundant memory cell in a redundant memory cell area contained in the other memory mat. At this time of selecting the redundant main word line for selecting the redundant memory cell, there is not required the logical operation for deciding whether or not the redundant use of the access address fed from the outside is proper. For example, the redundant main word line is set to the select level on the basis of a chip select signal. As a result, the drive start timing of the redundant main word line is not delayed in the least from the drive start timing of the main word line. Thus, it is possible to prevent the event that the select drive timing of the redundant sub word line is delayed on account of the delay in the drive timing of the redundant main word line.

Semiconductor memory device having redundancy memory cells for replacing

A semiconductor integrated circuit device has an address decoder which is constructed of a plurality of MOSFETs implemented in a switch tree. The switch tree includes first and second switch tree portions which are controlled `on` and `off` by the same input signals. A first switch branch in the first switch tree portion, which is constructed of a comparatively small number of MOSFETs, and a second switch branch in the second switch tree portion, which is constructed of a comparatively large number of MOSFETs, are controlled `one` and `off` by the same input signal, while a second switch branch in the first switch tree portion, which is constructed of a comparatively large number of MOSFETs, and a first switch branch in the second switch tree portion, which is constructed of a comparatively small number of MOSFETs, are controlled `on` and `off` by the same input signal. This construction is effective to lessen an increase in the number of MOSFETs which are to be coupled to the input lines of the address decoder.

Semiconductor integrated circuit having a tree circuit

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Tsukui-machi, Japan

Takeshi Fukazawa