Nippondenso Co., Ltd.

Denso Corporation

Tyffon Inc.

Takeshi Fukazawa

Shunzo Yamaguchi

Morihiro Atsumi

Akira Kuroyanagi

Yoshifumi Okabe

Takeshi Yamauchi

Muneo Tamura

Katuhide Niwa

Tsuyoshi Yamamoto

Hitoshi Yoshida

Kunihiko Hara

Takeshi Miyajima

Masami Naito

Hisanori Yokura

Naoto Okabe

Takaaki Aoki

Masahito Mizukoshi

Yoshihiko Ozeki

Naoto Hayashi

Hironao Yamaguchi

Tomofusa Shiga

Kimiharu Kayukawa

Yoji Kato

Shoji Ozoe

Tooru Yamaoka

Masashi Irie

Hironari Kuno

Tomio Kumoi

Eishi Kawasaki

Teruyuki Nakahashi

Shinichi Saigo

Provided is an image output device including image acquisition means for acquiring an image related to a subject captured by a user, position information acquisition means for acquiring position information indicating a position where the image is captured, generation means for generating a landscape image in which an image based on the image acquired by the image acquisition means is superimposed on an image obtained by capturing the landscape, when displaying the image obtained by capturing the landscape of position information acquired by the position information acquisition means, and image output means for outputting the landscape image.

Non-transitory computer-readable medium storing game program, control method of computer, information processing apparatus, image output apparatus, image output method, and non-transitory computer-readable medium storing image output program

A diode is provided which includes at least one diode element which has a plurality of N-type regions and a plurality of P-type regions, the N-type regions and the P-type regions being alternately arranged in series to form PN junctions, and an insulated substrate which has electric insulation. The N-type regions and the P-type regions are formed on the insulated substrate.

Diode

A diode has a multiple p-n junction body, anode and cathode electrodes, a short-circuit electrode, a guard ring, and an insulation film. The multiple p-n junction body has first to fourth semiconductor layers stacked to provide a lamination structure between the anode electrode and the cathode electrode. Each of the first and third semiconductor layers is a first conductive semiconductor. Each of the second and fourth semiconductor layers is a second conductive semiconductor. The first and second semiconductor layers form a p-n junction. The second and third semiconductor layers form a p-n junction. The third and fourth semiconductor layers form a p-n junction. The short circuit electrode provides a short circuit between the second semiconductor layer and the third semiconductor layer. A high concentration region is formed in a contact region in the second semiconductor layer. A surface of the contact region is in contact with the short-circuit electrode.

A vertical type semiconductor device includes: a silicon substrate having a first surface and a second surface; a first electrode disposed on the first surface of the silicon substrate; and a second electrode disposed on the second surface of the silicon substrate. Current is capable of flowing between the first electrode and the second electrode in a vertical direction of the silicon substrate. The second surface of the silicon substrate includes a re-crystallized silicon layer. The second electrode includes an aluminum film so that the aluminum film contacts the re-crystallized silicon layer with ohmic contact.

Vertical type semiconductor device and method for manufacturing the same

A method of manufacturing of a semiconductor device having a thermal oxidation process for selectively forming an oxide film by a thermal oxidation, which can reduce the generation of lattice defects in the semiconductor device during the thermal oxidation process. A groove portion LOCOS oxide film is formed in a groove portion of a semiconductor substrate by first and second wet oxidation steps. At the first wet oxidation step, a thin oxide film is formed on an exposed surface of an epitaxial layer by performing a wet oxidation through an opening portion made of silicon nitride under an oxidation temperature of approximately 875&deg; C. At the second wet oxidation step, the oxidation temperature is risen to approximately 1050&deg; C. to advance the oxidation of the epitaxial layer to finally form the groove portion LOCOS oxide film having a thickness of approximately 950 nm. Lattice defects due to the dislocation is reduced by largely releasing the thermal stress generated at the semiconductor substrate portion corresponding to the edges of the groove portion LOCOS oxide film. Therefore, it can reduce the generation of lattice defects in the semiconductor device during the thermal oxidation process.

Method of manufacturing a semiconductor device having an oxidation process for selectively forming an oxide film

A semiconductor device includes a semiconductor element. A silicon nitride film covers the semiconductor element. The silicon nitride film is made of Si.sub.X N.sub.Y H.sub.Z, where X, Y, and Z denote atomic fractions of Si, N, and H resptively. The silicon nitride film relates to an optical absorption edge wavelength shorter than 254 nm. A mean area of regions surrounded by crystal-like grain boundaries at a surface of the silicon nitride film is equal to 4.5.times.10.sup.4 nm.sup.2 or more. The semiconductor element may include a memory element from which information can be erased by exposure to ultraviolet rays.

Method of fabricating a semiconductor device having a silicon nitride

A power MOSFET having a groove for forming a channel improved for shortening the switching time and increasing the dielectric breakdown strength of the gate oxide film is disclosed. The power MOSFET includes a concave structure in which a gate oxide film at a groove bottom is thickened. Namely, since the gate oxide film between a gate electrode and a first conductivity type semiconductor layer is thick, the capacitance of the oxide film therebetween is reduced. Therefore, the input and output capacitance of the gate oxide film can be reduced, and switching loss can be also reduced since the switching time can be shortened. Further, greater dielectric breakdown strength of the gate oxide film can be obtained as a result of the thickened gate oxide film at the groove bottom.

Semiconductor device having a gate electrode in a grove and a diffused

A semiconductor device includes a semiconductor element. A silicon nitride film covers the semiconductor element. The silicon nitride film is made of Si.sub.X N.sub.Y H.sub.Z, where X, Y, and Z denote atomic fractions of Si, N, and H respectively. The silicon nitride film relates to an optical absorption edge wavelength shorter than 254 nm. A mean area of regions surrounded by crystal-like grain boundaries at a surface of the silicon nitride film is equal to 4.5.times.10.sup.4 nm.sup.2 or more. The semiconductor element may include a memory element from which information can be erased by exposure to ultraviolet rays.

Silicon nitride film having a short absorption wavelength and

A facedown-type semiconductor pressure sensor has a Si sensing element including a diaphragm, a spacer, and a piezoresistive device embedded in the diaphragm, and a pedestal. The spacer, which is positioned between the semiconductor substrate and the pedestal, has a photolitho-graphically etched hole such that the sensing element, the hole and the pedestal define a sealed chamber. The sealed pressure chamber is substantially aligned with the diaphragm.

Facedown-type semiconductor pressure sensor with spacer

A thermoelectric generating composite functioning apparatus used as a glow plug in a diesel engine has sintered semiconductor elements respectively formed in the shape of a bar of N-type and P-type thermoelectric semiconductor materials. The N-type and P-type semiconductor elements are provided oppositely with a gap between them, and their end portions are put in mutual contact to form a P-N junction. A low thermal conductivity insulator is filled in the interval between the N-type and the P-type semiconductor elements. The N-type and P-type semiconductor elements provided in the P-N junction state are contained through the insulator in a housing. Lead terminals connected to the N-type and P-type semiconductor elements are formed in the housing. The apparatus may provide heat to the combustion chamber, or generate electricity from the heat in the combustion chamber.

Thermoelectric generating composite functioning apparatus

A ceramic heater having a heating element of a sintered mixture comprising alumina, titanium nitride and titanium carbide, is discribed. The heating element has a good oxidation resistance, and a relatively high temperature coefficient of resistance. The larger composition of titanium nitride acts to increase the temperature coefficient of resistance. The larger composition of alumina acts to prevent oxidation increase and to improve the sintering. The adequate composition of each ingredients can result in a suitable heating element for a ceramic heater.

Ceramic heater

In an exhaust gas cleaning apparatus a ceramic heating resistor has a lattice-shaped exhaust gas passage and is formed by extrusion. The ceramic heating resistor is fixed closely to the upper stream side of a filter which catches particulates contained in exhaust gas. This heating resistor is divided into a plurality of sections so that heating current is successively supplied to the divided sections.

Exhaust gas cleaning apparatus

A ceramic heating element is held in a metal housing to be mounted on an internal combustion engine, so that the heating element is operated as a glow plug for igniting an air-fuel mixture. The ceramic heating element is formed of an electrode section housed in the housing and a heat generating section extending out of the housing, whereby the heat generating section is exposed to the mixture in an engine cylinder. The electrode and heat generating sections are divided into two portions, respectively, and both forward ends of divided heat generating portions are connected with each other, so that electric current flows from one of the electrode portions through the divided heat generating portions to the other electrode portion.

A ceramic heater having a heating element of a sintered mixture comprising alumina and titanium nitride and/or titanium carbide. The heating element has a specific resistance in a range from 10.sup.-4 to several .OMEGA.cm. The ceramic heater may have supporting substrates of insulating materials with which the heating element is covered. The ceramic heater can be used at a temperature above 1000.degree. C.

Growing community of inventors

Nagoya, Japan

Takeshi Fukazawa