Semiconductor Energy Laboratory Co., Ltd.

Tdk Corporation

Takeshi Fukada

Shunpei Yamazaki

Mitsunori Sakama

Naoya Sakamoto

Masayoshi Abe

Masato Susukida

Kunio Suzuki

Mikio Kinka

Katsuhiko Shibata

Susumu Nagayama

Ippei Kobayashi

Nobumitsu Amachi

Kaoru Koyanagi

Hiroshi Uehara

Takashi Inushima

Toshiji Hamatani

Mitsufumi Codama

Satoshi Teramoto

Masaaki Hiroki

Yukio Yamauchi

Yasuhiko Takemura

Hongyong Zhang

Hiroki Adachi

Takashi Inujima

Yukiko Uehara

Akira Takenouchi

Yoshiharu Hirakata

Michio Arai

Shigenori Hayashi

Masaaki Ikeda

Hisato Shinohara

Kazushi Sugiura

Mitsufumi Kodama

Nobuo Furukawa

Ichirou Takayama

Minoru Miyazaki

Ichiro Takayama

Noriya Ishida

Mamoru Tashiro

Takashi Inuzima

Toru Takayama

Yasuyuki Arai

Hideomi Suzawa

Mitsuhiro Ichijo

Takashi Fukui

Shumpei Yamazaki

Naoki Hirose

Junichi Takeyama

Hisashi Abe

Shinji Imatou

Mitsunori Tsuchiya

Mari Sasaki

Kazuhisa Nakashita

Atsushi Kawano

Akemi Satake

Mitsunri Sakama

Takashi Fuki

In a semiconductor device manufacturing process, a gate insulating film forming step, an amorphous semiconductor film forming step, and an insulating film forming step are continuously performed without taking out the substrate to the atmosphere.

Thin film semiconductor device and method of manufacturing the same

A method of manufacturing thin film field effect transistors is described. The channel region of the transistors is formed by depositing an amorphous semiconductor film in a first sputtering apparatus followed by thermal treatment for converting the amorphous phase to a polycrystalline phase. The gate insulating film is formed by depositing an oxide film in a second sputtering apparatus connected to the first apparatus through a gate valve. The sputtering for the deposition of the amorphous semiconductor film is carried out in an atmosphere comprising hydrogen in order to introduce hydrogen into the amorphous semiconductor film. On the other hand the gate insulating oxide film is deposited by sputtering in an atmosphere comprising oxygen.

Method of manufacturing gate insulated field effect transistors

There is provided a highly reliable semiconductor device in which electrostatic breakdown can be prevented. A diamond-like carbon (DLC) film is formed on a surface of an insulating substrate, and thereafter, a thin film transistor is formed on the insulating substrate. This DLC film allows charges of static electricity to flow and can prevent electrostatic breakdown of the thin film transistor.

Semiconductor device with diamond-like carbon film on backside of substrate

In forming various types of insulating films in manufacture of a semiconductor device, carbon is gasified into CH, COH etc. during film formation by adding active hydrogen and nitrogen oxide to reduce the carbon content during the film formation, and the effect of blocking impurities such as alkali metals is improved.

APCVD method of forming silicon oxide using an organic silane, oxidizing agent, and catalyst-formed hydrogen radical

A silicon oxide film is formed to cover an island non-monocrystalline silicon region by plasma CVD using an organic silane having ethoxy groups (e.g., TEOS) and oxygen as raw materials, while hydrogen chloride or a chlorine-containing hydrocarbon (e.g., trichloroethylene) of a fluorine-containing gas is added to the plasma CVD atmosphere, preferably in an amount of from 0.01 to 1 mol % of the atmosphere so as to reduce the alkali elements from the silicon oxide film formed and to improve the reliability of the film. Prior to forming the silicon oxide film, the silicon region may be treated in a plasma atmosphere containing oxygen and hydrogen chloride or a chlorine-containing hydrocarbon. The silicon oxide film is obtained at low temperatures and this has high reliability usable as a gate-insulating film in a semiconductor device.

Insulating film and method of producing semiconductor device

A method of manufacturing a semiconductor device that forms laminate layers includes the steps of reducing contamination containing the single bond of carbon on at least one part of a surface on which the laminate films are formed by activated hydrogen before the laminate films are formed, and forming the laminate films on the surface on which the laminate films are formed.

Method of manufacturing a semiconductor device

Improved method of heat-treating a glass substrate, especially where the substrate is thermally treated (such as formation of films, growth of films, and oxidation) around or above its strain point. If devices generating heat are formed on the substrate, it dissipates the heat well. An aluminum nitride film is formed on at least one surface of the substrate. This aluminum nitride film acts as a heat sink and prevents local concentration of heat produced by the devices such as TFTs formed on the glass substrate surface.

Glass substrate assembly, semiconductor device and method of heat-treating glass substrate

In manufacturing a thin film semiconductor device, a gate electrode forming step, a gate insulating film forming step, an amorphous semiconductor film forming step, a crystalline semiconductor film forming step, and an insulating film forming step are performed continuously without breaking vacuum.

Method of manufacturing thin film semiconductor device

Improved method of heat-treating a glass substrate, especially where the substrate is thermally treated (such as formation of films, growth of films, and oxidation) around or above its strain point If devices generating heat are formed on the substrate, it dissipates the heat well. An aluminum nitride film is formed on at least one surface of the substrate. This aluminum nitride film acts as a heat sink and prevents local concentration of heat produced by the devices such as TFTs formed on the glass substrate surface.

An interlayer insulating film ( ) that is formed on a substrate ( ) so as to cover TFTs ( ) is planarized by mechanical polishing that is typified by CMP. Pixel electrodes ( ) are formed on the interlayer insulating film ( ) and an insulating layer ( ) is formed so as to cover the pixel electrodes. The insulating layer ( ) is planarized by second mechanical polishing so that the surfaces of the pixel electrodes become flush with those of resulting buried insulating layers ( ). Since the pixel electrode surfaces have no steps, such problems as alignment failures of a liquid crystal material and a contrast reduction due to diffused reflection of light can be prevented.

Semiconductor device and manufacturing method thereof

In forming various types of insulating films in manufacture of a semiconductor device, carbon is gasified into CH , COH etc. during film formation by adding active hydrogen and nitrogen oxide to reduce the carbon content during the film formation, and the effect of blocking impurities such as alkali metals is improved.

A light source optical system capable of forming an image having good balance in brightness of red, blue, and green color light, having high overall brightness, and having good color reproducibility, on a screen is provided. The light source optical system has a first lamp, a second lamp, and a condensing optical system for synthesizing a first light emitted from the first lamp and a second light emitted from the second lamp to form irradiation light. The light source optical system is characterized in that the first light and the second light have mutually differing spectral distributions.

Light source optical system and projector having first and second lamps of different spectral distributions

Semiconductor device and method of manufacturing the same

An interlayer insulating film ( ) that is formed on a substrate( ) so as to cover TFTs( ) is planarized by mechanical polishing that is typified by CMP. Pixel electrodes ( ) are formed on the interlayer insulating film( ) and an insulating layer( ) is formed so as to cover the pixel electrodes. The insulating layer( ) is planarized by second mechanical polishing so that the surfaces of the pixel electrodes become flush with those of resulting buried insulating layers( ). Since the pixel electrode surfaces have no steps, such problems as alignment failures of a liquid crystal material and a contrast reduction due to diffused reflection of light can be prevented.

Growing community of inventors

Kanagawa, Japan

Takeshi Fukada