National Institute of Advanced Industrial Science and Technology

Takeshi Fujii

Masashi Kawasaki

Yoshinori Tokura

Akihito Sawa

Provided is a material composition which allows a nonvolatile memory element made of a perovskite-type transition metal oxide having the CER effect to be formed of three elements, which comprises an electric conductor having a shallow work function or a small electronegativity, such as Ti, as an electrode and a rare earth-copper oxide comprising one type of rare earth element, copper and oxygen, such as LaCuO, as a material constituting a heterojunction with the electric conductor.

Perovskite transition metal oxide nonvolatile memory element

A nonvolatile memory element in which RbMbMnOhaving higher insulation properties than RaMaMnOis inserted between the RaMaMnOand a metal having a shallow work function or a low electronegativity in order to improve resistance change properties and switching properties and to control the resistance change properties. (In the formulas, Ra and Rb represent rare earth elements and are solid solutions of one or more types of rare earth elements. Average ionic radius of the Rb is smaller than that of the Ra. Ma and Mb represent alkaline earth metals and are solid solutions of one or more types of alkaline earth metals. 0&#x3c;x, y&#x3c;1).

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Hachioji, Japan

Takeshi Fujii