Hamamatsu-photonics K.k.

Takeshi Endo

Hiroshi Kobayashi

Hiroki Moriya

Toshinari Mochizuki

The present embodiment relates to an ion detector and the like that can reduce a dark current serving as a noise component. An ion detector having an electron multiplier includes a shield structure confining a potential gradient spreading in all directions starting from an input electrode into a limited space including the input electrode, and an input cable having one end electrically connected to the input electrode. The shield structure has a structure surrounding at least the input electrode, and includes one or more members. Each of the members is comprised of a metal material or an insulating material. Further, a part of the shield structure is constituted by a metal mesh window. An outer peripheral surface of the input cable is covered with an insulating coating in order to block the arrival of unnecessary ions and electrons generated inside and outside the shield structure.

Ion detector, measurement device, and mass spectrometer

An ion detector includes: a first electron multiplier for detecting first ions having a first polarity; a second electron multiplier for detecting second ions having a second polarity different from the first polarity; a first anode for capturing electrons emitted from the first electron multiplier; a second anode for capturing electrons emitted from the second electron multiplier; and a switching circuit including a first input terminal electrically connected to the first anode, a second input terminal electrically connected to the second anode, and an output terminal, the switching circuit selectively connecting one of the first input terminal and the second input terminal to the output terminal.

Ion detector

A CEM and an ion detector of one embodiment have a structure for enabling ion detection with higher sensitivity than the prior art. A channel electron multiplier includes a channel body, an input-side conductive layer, an output-side conductive layer, and an electrode. The channel body includes a channel, and a resistance layer and an electron emission layer formed on the channel's inner wall surface. The input-side conductive layer is provided on the channel body, and a part thereof extends into the tapered opening. The output-side conductive layer is provided on the tapered opening. The electrode has openings through which charged particles pass, and is disposed on an opposite side of the output end face to the input end face. The electrode and the input-side conductive layer are set to the same potential to eliminate the influence of an external electric field in the tapered opening.

Channel electron multiplier and ion detector

The present embodiment relates to an ion detector provided with a structure for suppressing degradation over time in an electron multiplication mechanism in a multi-mode ion detector. The ion detector includes a dynode unit, a first electron detection portion including a semiconductor detector having an electron multiplication function, a second electron detection portion including an electrode, and a gate part. The first and second electron detection portions are capable of ion detection at different multiplication factors. The gate part includes at least a final-stage dynode as a gate electrode, and controls switching between passage and interruption of secondary electrons which are directed toward the first electron detection portion by adjusting a set potential of the gate electrode.

The present embodiment relates to an ion detector provided with a structure for suppressing degradation over time in an electron multiplication mechanism in the ion detector. The ion detector includes a dynode unit, serving as an electron multiplication mechanism, which multiplies secondary electrons which are emitted in response to incidence of ions, and a semiconductor detector having an electron multiplication function. Further, a focus electrode having an opening that allows passage of secondary electrons is disposed on a trajectory of secondary electrons which are directed from the dynode unit toward the semiconductor detector, and the focus electrode functions to guide secondary electrons from the dynode unit onto an electron incidence surface of the semiconductor detector.

According to an embodiment, in a CEM assembly and the like, it is possible to reduce a size of a voltage supply circuit configured to stabilize a voltage to be applied to a channel electron multiplier. The CEM assembly includes a CEM and a voltage supply circuit. The CEM includes an input electrode, a multiplication channel, and an output electrode. The voltage supply circuit includes a power source unit and a constant voltage generation unit. A potential of an input electrode A is set by an electromotive force generated by the power source unit. The constant voltage generation unit includes a constant voltage supply unit configured to cause voltage drop. A target potential set at an output-side reference node is maintained by the voltage drop of the constant voltage supply unit.

Growing community of inventors

Hamamatsu, Japan

Takeshi Endo