Shin-etsu Chemical Co., Ltd.

International Business Machines Corporation

Lenovo (singapore) Pte. Ltd.

Matsushita Electric Industrial Co., Ltd.

Panasonic Corporation

Fujifilm Corporation

Shin-etsu Chemical C O., Ltd.

Takeshi Asano

Motoaki Iwabuchi

Tsutomu Ogihara

Yoshitaka Hamada

Fujio Yagihashi

Takafumi Ueda

Masaru Sasago

Hideo Nakagawa

Shohhei Fujio

Hideyuki Usui

Kazuo Fujii

Masaki Oie

Shinichi Ikami

Kazuo Masuda

Dirk Pfeiffer

Duixian Liu

Brian Paul Gaucher

Akihisa Sakurai

Takashi Shoji

Yoshiaki Sakamoto

Hiroaki Agata

Peter S Lee

Osamu Yamamoto

Futoshi Yoshida

Ephraim Bemis Flint

Masaharu Itoh

Hideto Horikoshi

Kenshin Yonemochi

Hitoshi Kubota

Arimasa Naitoh

Kozo Matsunaga

Takehiko Noguchi

Thomas Wayne Studwell

Osamu Matsushima

Yoichi Sugitomo

Takahiro Yokomae

Masahide Yoshihara

Toyotoshi Tsujikawa

Masahiro Tsumita

Masaki Kinugasa

Osamu Sonoyama

A method for controlling antennas of a mobile terminal device such as a laptop PC and a handheld PC without degrading communication speed or quality and a mobile terminal device having such control are provided. The method comprises determining the usage of the mobile terminal device, determining an antenna to be disabled among the plurality of antennas according to the usage that is determined by the determining of usage, and disabling the antenna which is determined by determining of an antenna to be disabled, wherein the determining of usage determines usage based on the display orientation of the display unit of the mobile terminal device.

Method for controlling antennas of mobile terminal device and such a mobile terminal device

A high-temperature bonding composition comprising a silicon base polymer as a thermosetting binder is provided. The silicon base polymer is obtained from dehydrolytic condensation of a condensate precursor comprising a silane compound having at least one pair of silicon atoms tied by a crosslink composed of an aliphatic hydrocarbon, heterocyclic or aromatic hydrocarbon group, and having at least three hydroxyl and/or hydrolyzable groups. Those silicon atoms having a direct bond to the crosslink composed of the aliphatic hydrocarbon, heterocyclic or aromatic hydrocarbon group are present in a proportion of at least 90 mol % relative to all silicon atoms in the polymer.

High-temperature bonding composition, substrate bonding method, and 3-D semiconductor device

A pair of substrates each having a bonding surface are joined together by interposing a bond layer precursor coating between the bonding surfaces of the substrates and heating the precursor coating to form a bond layer. Prior to the joining step, the substrate on the bonding surface is provided with a gas-permeable layer. Even when a material which will evolve a noticeable volume of gas upon heat curing is used as the precursor coating, substrates can be joined via a robust bond without the peeling problem by gas evolution.

Substrate joining method and 3-D semiconductor device

An antenna unit is provided with an inverted F-type antenna element provided with a feeding point and a ground connection point, and a non-feed antenna element configured so as to resonate with the inverted F-type antenna element through electrical coupling. In addition, the antenna unit may also be provided with a ground part which is grounded to the earth and connected to the ground connection point provided on one edge of the inverted F-type antenna element, and a resonance element, one edge of which is connected to the ground part, resonated by the non-feed antenna element through electrical coupling.

Mobile antenna unit and accompanying communication apparatus

A composition for forming an antireflective coating for use in a photolithography process using exposure light of up to 200 nm comprises a silicon-containing polymer obtained through hydrolytic condensation of a silicon-silicon bond-containing silane compound having formula: RSiXwherein R is a monovalent hydrocarbon group, X is alkoxy, alkanoyloxy or halogen, and m is 3 to 6. The composition allows the overlying photoresist film to be patterned to a satisfactory profile and has a high etching selectivity relative to organic material so that a substrate can be processed at a high accuracy.

Silicon-containing antireflective coating forming composition, silicon-containing antireflective coating, substrate processing intermediate, and substrate processing method

A silicon-containing film is formed from a heat curable composition comprising (A-1) a silicon-containing compound obtained by effecting hydrolytic condensation of a hydrolyzable silicon compound in the presence of an acid catalyst and removing the acid catalyst, (A-2) a silicon-containing compound obtained by effecting hydrolytic condensation of a hydrolyzable silicon compound in the presence of a basic catalyst and removing the basic catalyst, (B) a hydroxide or organic acid salt of lithium, sodium, potassium, rubidium or cesium, or a sulfonium, iodonium or ammonium compound, (C) an organic acid, and (D) an organic solvent. The silicon-containing film allows an overlying photoresist film to be patterned effectively.

Silicon-containing film-forming composition, silicon-containing film, silicon-containing film-bearing substrate, and patterning method

In the invention, a silica sol prepared by hydrolyzing and condensing a silane compound represented by the following formula: Si(OR)or RSi(OR)wherein Rs, R(s) and R(s) may be the same or different when a plurality of them are contained in the molecule and each independently represents a linear or branched Calkyl group in the presence of a hydrophilic basic catalyst and a hydrophobic basic catalyst is used for a conventional porous-film forming composition.

Method for forming insulating film with low dielectric constant

Provided are organic silicon oxide fine particles which can be formed into a porous film having a dielectric constant and mechanical strength expected as a high-performance porous insulating film and having excellent chemical stability, and a preparation method thereof. Described specifically, provided are an organic silicon oxide fine particle comprising a core containing at least an inorganic silicon oxide or an organic silicon oxide and a shell containing at least an organic silicon oxide and being formed around the core by using shell-forming hydrolyzable silane in the presence of a basic catalyst; wherein of silicon atoms constituting the core or the shell, a ratio (T/Q) of a number (T) of silicon atoms having at least one bond directly attached to a carbon atom to a number (Q) of silicon atoms having all of four bonds attached to an oxygen atom is greater in the shell than in the core; and wherein the shell-forming hydrolyzable silane comprise at least a hydrolyzable silane compound having two or more hydrolyzable-group-having silicon atoms bound to each other via a carbon chain or via a carbon chain containing one silicon atom between some carbon atoms.

Organic silicon oxide core-shell particles and preparation method thereof, porous film-forming composition, porous film and formation method thereof, and semiconductor device

A radiation detector includes a substrate, a lower electrode disposed on the substrate, a radiation detecting layer formed on the upper surface of the lower electrode, an upper electrode formed on the upper surface of the radiation detecting layer, a protection layer which is formed on the upper electrode, whose end portion extends to an end surface of the substrate and which covers the upper electrode, and a reinforcement member which is formed from the lower surface of the substrate to the surface of the protection layer and which covers the end portion of the protection layer.

Radiation detector

A multilayer resist process comprises forming in sequence an undercoat film, an intermediate film, and a photoresist film on a patternable substrate, and effecting etching in multiple stages. A silicon-containing film forming composition is useful in forming the intermediate film serving as an etching mask, comprising a silicon-containing polymer obtained through hydrolytic condensation of at least one Si&#x2014;Si bond-containing silane compound having formula: RSiXwherein R is a monovalent hydrocarbon group, X is alkoxy, alkanoyloxy or halogen, and m is 3 to 6. The composition allows the overlying photoresist film to be patterned to a satisfactory profile and has a high etching selectivity relative to organic materials.

Silicon-containing film forming composition, silicon-containing film serving as etching mask, substrate processing intermediate, and substrate processing method

There is disclosed an antireflection film composition used for lithography comprising: at least

Antireflection film composition, substrate, and patterning process

The present invention provides a material for an antireflective film characterized by high etching selectivity with respect to a resist, that is, which has a fast etching speed when compared to the resist, and in addition, can be removed without damage to a film which is to be processed. The present invention also provides a pattern formation method for forming an antireflective film layer on a substrate using this antireflective film-forming composition, and a pattern formation method that uses this antireflective film as a hard mask, and a pattern formation method that uses this antireflective film as a hard mask for processing the substrate. The present invention also provides an antireflective film-forming composition comprising an organic solvent, a cross linking agent, and a polymer comprising a light absorbing group obtained by hydrolyzing and condensing more than one type of silicon compound, a crosslinking group and a non-crosslinking group.

Antireflective film-forming composition, method for manufacturing the same, and antireflective film and pattern formation method using the same

A sacrificial film-forming composition is provided comprising (A) a silicone resin which is a co-hydrolytic condensate of hydrolyzable silanes having formulae (1) and (2):X&#x2014;Y&#x2014;SiZ&#x2003;&#x2003;(1)RSiZ&#x2003;&#x2003;(2)wherein Z is a hydrolyzable group, X is a crosslinkable organofunctional group such as an unsubstituted hydroxyl group or a substituted or unsubstituted epoxy, acyloxy or acryloxy group, Y is a single bond or a divalent hydrocarbon group, R is hydrogen or a monovalent hydrocarbon group, and n is an integer of 0 to 3, the silicone resin being capable of crosslinking reaction by the crosslinkable organofunctional group in formula (1), (B) a crosslinking agent, (C) an acid generator, and (D) an organic solvent. The composition has improved storage stability, filling properties, adhesion and coating uniformity sufficient to form a sacrificial film which is effectively dissolvable in a stripping solution.

Sacrificial film-forming composition, patterning process, sacrificial film and removal method

A porous film-forming composition is provided comprising (A) a polymer obtained by hydrolytic condensation of a hydrolyzable silane having formula (1):R&#x2014;Si&#x2014;R&#x2003;&#x2003;(1)wherein Ris a monovalent organic group or hydrogen, Ris a hydrolyzable group or a hydroxyl group and n is an integer of 0 to 3, a hydrolyzate thereof or a partial condensate thereof, with the proviso that at least one silicon compound having an organic crosslinkable group as Ris included, the polymer being capable of crosslinking reaction by the organic crosslinkable group, and (B) an organic solvent. The composition has improved storage stability, filling properties, adhesion and coating uniformity sufficient to form a sacrificial film which is dissolvable in a stripping solution.

Porous film-forming composition, patterning process, and porous sacrificial film

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Joetsu, Japan

Takeshi Asano