Canon Kabushiki Kaisha

Kabushiki Kaisha Toshiba

Jvc Kenwood Corporation

Takeshi Aoki

Nobutaka Ukigaya

Hideki Takehara

Hiroshi Yuzurihara

Hiroaki Naruse

Shigeru Nishimura

Takashi Okagawa

Yukinobu Suzuki

Koji Hara

Satoru Hirose

Tatsumi Naganuma

Akinori Suyama

Yuya Fujino

Masahiro Kanai

Soichiro Kawakami

Yusuke Onuki

Satoshi Ogawa

Tadashi Sawayama

Soichiro Nagamochi

Akihiro Kawano

Yasuhiro Kawabata

Junya Tamaki

Hiroshi Takakusagi

Takayasu Kanesada

Koki Takami

Norihiko Nakata

Yasushi Watanabe

Hisanori Hosaka

Manamu Takahashi

A drive recorder according to an embodiment of the present disclosure includes: an imaging unit that is mounted on a vehicle and captures a video of the surroundings of the vehicle; a video recording unit that has, recorded therein, video data captured; a network connecting unit that receives accident information including a time and date when an accident occurred and a place where the accident occurred; and a video retrieving unit that determines whether any video data captured in a predetermined time period and in a predetermined region are available in the video data recorded in the video recording unit, the predetermined time period including the time and date when the accident occurred, the predetermined region including the place where the accident occurred.

Imaging device, video retrieving method, video retrieving program, and information collecting device

Provided is an on-vehicle communication device that includes a vehicle information acquiring unit that acquires vehicle speed information on a vehicle capable of performing self-driving and/or current location information on the vehicle. The on-vehicle communication device also includes a self-driving level acquiring unit that acquires self-driving level information indicating a self-driving level of the vehicle. Further, the on-vehicle communication device includes a controller that determines whether to enable or disable a connection to a high-confidential communication channel based on the self-driving level information and the vehicle speed information and/or the current location information.

On-vehicle communication device controlled based on self-driving level, communication control method controlled based on self-driving level, and non-transitory storage medium

A liquid discharge head substrate comprising a liquid discharge element arranged above a surface of a substrate, an insulator arranged between the surface and the liquid discharge element, a liquid supply port extending through the insulator, first and second conductive patterns is provided. The first pattern connects an element arranged on the surface and the liquid discharge element. The second pattern surrounds the liquid supply port. The insulator includes first and second films that are bonded at a bonding surface along the surface. A first member arranged in the first film and a second member arranged in the second film, of the first pattern, are bonded at the bonding surface. A third member arranged in the first film and a fourth member arranged in the second film, of the second pattern, are bonded at the bonding surface.

Liquid discharge head substrate, liquid discharge head, and liquid discharge apparatus

One embodiment relates to a liquid discharge head substrate including at least one heat generating resistive element, a first insulating layer covering the heat generating resistive element, a conductive layer disposed on the first insulating layer and overlapping the heat generating resistive element with the first insulating layer interposed therebetween in a plan view with respect to an upper surface of the heat generating resistive element, and a second insulating layer covering an edge of the conductive layer. The edge of the conductive layer has a tapered shape.

Liquid discharge head substrate, liquid discharge head, liquid discharge apparatus, method for forming conductive layer, and method for manufacturing liquid discharge head substrate

Provided are a solid-state image pickup apparatus which includes: a semiconductor substrate having a plurality of photoelectric converters; a first and a second insulating layers formed on the semiconductor substrate; an optical waveguide formed above each of the plurality of photoelectric converters and in an opening portion of the first and the second insulating layers, and has a refractive index higher than a refractive index of the first insulating layer; and a light reflecting layer formed at a boundary between the optical waveguide and the second insulating layer, and has a refractive index lower than a refractive index of the optical waveguide, where the following expression is satisfied: &#x3b1;&#x3c;90&#xb0;, where a represents an angle formed by a boundary surface between the light reflecting layer and the second insulating layer with respect to a boundary surface between the first insulating layer and the second insulating layer.

Solid-state image pickup apparatus and method of manufacturing the same

A photoelectric conversion device has an insulator film disposed on a silicon layer having a photoelectric conversion region, the insulator film having a portion overlapped with the photoelectric conversion region, a silicon oxide film disposed on the insulator film, the silicon oxide film having a portion overlapped with the photoelectric conversion region, an electroconductive member disposed between the insulator film and the silicon oxide film, and a silicon oxide layer disposed between the electroconductive member and the silicon oxide film, in which the portion overlapped with the photoelectric conversion region of the silicon oxide film is in contact with the portion overlapped with the photoelectric conversion region of the insulator film and the hydrogen concentration of the silicon oxide film is greater than the hydrogen concentration of the silicon oxide layer.

Photoelectric conversion device, image pickup system, and method for manufacturing photoelectric conversion device

A method of manufacturing a photoelectric conversion device includes forming, with material containing aluminum, an electrically conductive pattern on a semiconductor substrate including a photoelectric converter, forming, on the electrically conductive pattern, an insulating film containing hydrogen, performing first annealing in a hydrogen-containing atmosphere, forming, on the insulating film, a protective film having lower hydrogen permeability than that of the insulating film after the first annealing, and performing second annealing in the hydrogen-containing atmosphere. Temperature in the first annealing is not less than temperature when forming the insulating film and not more than temperature when forming the protective film.

Method of manufacturing photoelectric conversion device

A method includes forming a multilayered film including a conductive layer mainly containing aluminum, and a barrier metal layer formed thereon, forming a hard mask layer on the barrier metal layer, patterning a resist on the hard mask layer, patterning the hard mask layer by dry-etching the hard mask layer with the patterned resist as a mask, cleaning a surface of the barrier metal layer with a cleaning solution after the patterning the hard mask layer, and dry-etching the multilayered film with the patterned hard mask layer as a mask after the cleaning the surface of the barrier metal layer. In the patterning the hard mask layer, dry etching is performed with a ratio of a flow rate of an oxidizing gas to a total flow rate of a process gas at less than 1% in a state in which the barrier metal layer is exposed to the process gas.

Semiconductor device and semiconductor device manufacturing method using patterning and dry etching

A method of manufacturing a solid state image sensor is provided. The method includes forming electrically conductive layer and an interlayer insulation film above a first region and a second region, performing an annealing process after forming the conductive layer and the interlayer insulation film, and forming a protective film above the interlayer insulation film and the electrically conductive layer. The electrically conductive layer includes a light shielding layer arranged above the second region. The interlayer insulation film includes a first portion located above the first region and a second portion located above the second region and below the light shielding layer. Before performing the annealing process, an average hydrogen concentration of the second portion is higher than an average hydrogen concentration of the first portion.

Solid state image sensor and method for manufacturing the same

A method of manufacturing a solid-state image sensor having a pixel region and a peripheral circuit region, includes forming an oxide film on a semiconductor substrate, forming an insulating film on the oxide film, forming a first opening in the insulating film and the oxide film in the peripheral circuit region, forming a trench in the semiconductor substrate in the peripheral circuit region by etching the semiconductor substrate through the first opening using the insulating film as a mask, forming a second opening in the insulating film to penetrate through the insulating film in the pixel region and to reach a predetermined depth of the oxide film, and forming insulators in the trench and the second opening.

Method of manufacturing solid-state image sensor

A solid-state image sensor including an effective pixel portion in which a plurality of pixels including photodiodes formed on a semiconductor substrate are arranged, and a peripheral portion arranged around the effective pixel portion, includes a plurality of metal wiring layers arranged above the semiconductor substrate, and a planarizing film covering a patterned metal wiring layer that is a top layer among the plurality of metal wiring layers, wherein in the effective pixel portion, the plurality of metal wiring layers have openings configured to guide light to the photodiodes, and in the peripheral portion, an opening is provided in the top layer, and at least one metal wiring layer between the top layer and the semiconductor substrate has a pattern which blocks light incident on the photodiodes via the opening in the top layer.

Solid-state image sensor

A semiconductor device comprises a semiconductor substrate, and a multilayer wiring structure arranged on the semiconductor substrate, the multilayer wiring structure including a plurality of first electrically conductive lines, an insulating film covering the plurality of first electrically conductive lines, and a second electrically conductive line arranged on the insulating film so as to intersect the plurality of first electrically conductive lines, wherein the insulating film has gaps in at least some of a plurality of regions where the plurality of first electrically conductive lines and the second electrically conductive line intersect each other, and a width of the gap in a direction along the second electrically conductive line is not larger than a width of the first electrically conductive line.

Method of manufacturing semiconductor device having air gaps in multilayer wiring structure

A semiconductor device comprises a semiconductor substrate, and a multilayer wiring structure arranged on the semiconductor substrate, the multilayer wiring structure including a plurality of first electrically conductive lines, an insulating film covering the plurality of first electrically conductive lines, and a second electrically conductive line arranged on the insulating film so as to intersect the plurality of first electrically conductive lines, where the insulating film has gaps in at least some of a plurality of regions where the plurality of first electrically conductive lines and the second electrically conductive line intersect each other, and the width of the gap in a direction along the second electrically conductive line is not larger than the width of the first electrically conductive line.

Semiconductor device having air gaps in multilayer wiring structure

A photoelectric conversion device includes a semiconductor substrate, a first insulating film on the semiconductor substrate, a second insulating film on the first insulating film, a third insulating film on the second insulating film, and a wiring disposed in the third insulating film, the wiring being a wiring layer closest to the semiconductor substrate. A first plug of a shared contact structure and a second plug are disposed in the first insulating film. A third plug and a first wiring that constitute a dual damascene structure are disposed in the second and third insulating films. The first insulating film is used as an etching stopper film during etching of the second insulating film and the second insulating film is used as an etching stopper film during etching of the third insulating film.

Photoelectric conversion device and method for making the same

A noise generated by a constitution of widening an incident aperture of light of a photoelectric conversion element is reduced. In a manufacturing method of a photoelectric conversion device, first electroconductor arranged in a first hole arranged in the first interlayer insulation layer electrically connects a first semiconductor region to a gate electrode of an amplifying MOS transistor not through wirings included in a wiring layer. Moreover, a second electroconductor electrically connects a second semiconductor region different from the first semiconductor region to a wiring. In a constitution of that second electroconductor, a third electroconductor arranged in a second hole arranged in the first interlayer insulation layer and a fourth electroconductor arranged in a third hole arranged in the second interlayer insulation layer are stacked and electrically connected to each other. And the step of forming the first electroconductor, and the step of forming the third electroconductor are performed simultaneously.

Growing community of inventors

Yokohama, Japan

Takeshi Aoki