Shin-etsu Chemical Co., Ltd.

International Business Machines Corporation

Mitsui Chemicals, Inc.

Globalfoundries Inc.

Eudyna Devices Inc.

Takeru Watanabe

Takeshi Kinsho

Jun Hatakeyama

Koji Hasegawa

Seiichiro Tachibana

Tsunehiro Nishi

Tsutomu Ogihara

Daisuke Kori

Mutsuo Nakashima

Youichi Ohsawa

Masaki Ohashi

Yuji Harada

Tomohiro Kobayashi

Katsuya Takemura

Katsuhiro Kobayashi

Toshihiko Fujii

Keisuke Niida

Takashi Sawamura

Masayoshi Sagehashi

Yuki Suka

Kazumi Noda

Yusuke Biyajima

Shiori Nonaka

Satoshi Watanabe

Kazuhiro Katayama

Hiroko Nagai

Kazunori Maeda

Masashi Iio

Toshiharu Yano

Osamu Watanabe

Akinobu Tanaka

Yusuke Nagae

Yoshinori Taneda

Wataru Kusaki

Rie Kikuchi

Satoshi Shinachi

Yasuhiko Kutsuwada

Rudy J Wojtecki

Daniel Sanders

Tohru Kubota

Keiichi Masunaga

Gregory Breyta

Daisuke Domon

Yuki Miyake

Ayumu Kiyomori

Miyoshi Yamashita

Ryosuke Taniguchi

Hideshi Kurihara

Yuichi Okawa

Takeshi Nagata

Tadahiro Sunaga

Takayoshi Nakahara

Tatsuya Hojo

Alexander Edward Hess

Shogo Tsukaguchi

Toshinobu Ishihara

Yoshio Kawai

Wu-Song S Huang

Takanobu Takeda

Yoshitaka Hamada

Martin Glodde

Hiroyuki Urano

Kenji Funatsu

Akihiro Seki

Takeshi Sasami

Tomohiro Watanabe

Junji Tsuchiya

Takao Yoshihara

Tatsuya Fujii

Takashi Miyazaki

Ryo Mitsui

Ryo Komatsu

Hironori Satoh

Javier J Perez

Yuuki Suka

Hirofumi Io

Kazuomi Sato

Yusuke Kai

Yoshinori Matsui

Katshiro Kobayashi

Takehiko Ishii

Daniel Paul Sanders

Tsutomo Ogihara

The present invention provides a vinylether compound of the following general formula (1), wherein Rrepresents a monovalent hydrocarbon group having 1 to 15 carbon atoms, and the wavy line represents the E-form, the Z-form, or a mixture thereof. The present invention further provides a process for preparing 2,3,4,4-tetramethyl-1-cyclopentenecarbaldehyde of the following formula of the following formula (2), the process comprising subjecting the vinylether compound (1) to a hydrolysis reaction to form 2,3,4,4-tetramethyl-1-cyclopentenecarbaldehyde (2).

Vinylether compounds and processes for preparing aldehyde compounds and a carboxylate compound therefrom

A resist underlayer film material used in multilayer resist method contains (A) compound shown by following general formula (1), and (B) organic solvent, where X independently represents monovalent organic group shown by following general formula (2); W contains an 'm' number of partial structures each independently shown by following formula (3); “m” and “n” each represent an integer of 1 to 10; broken lines represent bonding arms; Z represents aromatic group; A represents single bond or —O—(CH)—; “k” represents integer of 1 to 5; “p” represents integer of 1 to 10; Rrepresents hydrogen atom or monovalent organic group having 1 to 10 carbon atoms. Material is capable of forming resist underlayer film excellent in planarizing property in fine patterning process by multilayer resist method in semiconductor-device manufacturing process; and patterning processes and methods for forming resist underlayer film use material.

Resist underlayer film material, patterning process, and method for forming resist underlayer film

A composition for forming a silicon-containing resist underlayer film contains at least one or more kinds of a quaternary ammonium salt shown by the following general formula (A-1), and a thermally crosslinkable polysiloxane (Sx), where Arrepresents an aromatic group having 6 to 20 carbon atoms, or a heteroaromatic group having 4 to 20 carbon atoms. Rrepresents an alkyl group, alkenyl group, oxoalkyl group, or oxoalkenyl group having 1 to 12 carbon atoms, an aryl group having 6 to 20 carbon atoms, or an aralkyl group or aryloxoalkyl group having 7 to 12 carbon atoms. Some or all of hydrogen atoms of these groups are optionally substituted. Zrepresents an organic or inorganic anion as a counterion of the quaternary ammonium cation. An object is to provide a silicon-containing resist underlayer film having high effect of suppressing ultrafine pattern collapse and appropriate etching rate in multilayer resist methods.

Composition for forming silicon-containing resist underlayer film and patterning process

The present invention provides a process for preparing 2-methyl-N-(2′-methylbutyl)butanamide of the following formula (1): the process comprising: subjecting an α-arylethyl-2-methylbutylamine compound of the following general formula (2): wherein Ar represents a substituted or unsubstituted aryl group having 6 to 20 carbon atoms, to N-2-methylbutyrylation to form an N-α-arylethyl-2-methyl-N-(2′-methylbutyl)butanamide compound of the following general formula (3): wherein Ar is as defined above, and removing the α-arylethyl group of the resulting compound (3) to form 2-methyl-N-(2′-methylbutyl)butanamide (1).

Process for preparing 2-methyl-N-(2′-methylbutyl)butanamide

There are provided a composition which has a larger attracted number than (9Z)-9,13-tetradecadien-11-ynal alone; and others. More specifically, there are provided a composition bioactive to(STENCA), the composition including (9Z)-9,13-tetradecadien-11-ynal and (9E)-9,13-tetradecadien-11-ynal; a sustained release preparation for controlling STENCA, the preparation including the composition and a carrier or container for sustainedly releasing the (9Z)-9,13-tetradecadien-11-ynal and the (9E)-9,13-tetradecadien-11-ynal; and a method for controlling STENCA, the method including a step of installing the sustained release preparation in a field to release the (9Z)-9,13-tetradecadien-11-ynal and the (9E)-9,13-tetradecadien-11-ynal into the field.

Composition biologically active to stenoma catenifer and sustained release preparation comprising the same for controlling insect pest

The present invention relates to a process for preparing a (1S,2R)-(2-hydroxy-3,5,5-trimethyl-3-cyclopentenyl)methyl carboxylate compound of the following general formula (S,R)-(2), wherein Rrepresents a monovalent hydrocarbon group having 1 to 6 carbon atoms, and a bold wedged bond represents the absolute configuration, and a (1R,2S)-(2-acetoxy-3,5,5-trimethyl-3-cyclopentenyl)methyl carboxylate compound of the following general formula (R,S)-(3), wherein Ris as defined above, a hashed wedged bond represents the absolute configuration, and Ac represents an acetyl group, the process comprising: subjecting a (1RS,2SR)-(2-hydroxy-3,5,5-trimethyl-3-cyclopentenyl)methyl carboxylate compound of the following general formula (RS,SR)-(2), wherein Ris as defined above, and a hashed unwedged bond represents a relative configuration, to a kinetic resolution reaction with a lipase in the presence of vinyl acetate to obtain the (1S,2R)-(2-hydroxy-3,5,5-trimethyl-3-cyclopentenyl)methyl carboxylate compound ((S,R)-(2)) and the (1R,2S)-(2-acetoxy-3,5,5-trimethyl-3-cyclopentenyl)methyl carboxylate compound ((R,S)-(3)).

Kinetic resolution reaction of a (1RS,2SR)-(2-hydroxy-3,5,5-trimethyl-3-cyclopentenyl)methyl carboxylate compound, a process for preparing optically active trans-&#x3b1;-necrodyl isobutyrate, and a process for preparing optically active &#x3b3;-necrodyl isobutyrate

The present invention provides a process for preparing a (1,2-dimethyl-3-methylenecyclopentyl)acetate compound of the following general formula (3), wherein R represents a linear or branched alkyl group having 1 to 4 carbon atoms, the process comprising subjecting a haloacetaldehyde alkyl 2,3-dimethyl-2-cyclopentenyl acetal compound of the following general formula (1), wherein R is as defined above, and Y represents a halogen atom, to a dehydrohalogenation reaction in the presence of a base, followed by a rearrangement reaction to obtain a (1,2-dimethyl-2-cyclopentenyl)acetate compound of the following general formula (2), wherein R is as defined above, and subjecting the (1,2-dimethyl-2-cyclopentenyl)acetate compound (2) to an epoxidation reaction, followed by an isomerization reaction and then a methylenation reaction to obtain the (1,2-dimethyl-3-methylenecyclopentyl)acetate compound of the following general formula (3). The present invention also provides a process for preparing (1,2-dimethyl-3-methylenecyclopentyl)acetaldehyde of the following formula (4), the process comprising the aforesaid process for preparing the (1,2-dimethyl-3-methylenecyclopentyl)acetate compound (3), and converting an alkoxycarbonylmethyl group (i.e., &#x2014;CHC(&#x2550;O)OR) of the (1,2-dimethyl-3-methylenecyclopentyl)acetate compound (3) to a formylmethyl group (i.e., &#x2014;CHCHO) to obtain (1,2-dimethyl-3-methylenecyclopentyl)acetaldehyde (4).

Processes for preparing a (1,2-dimethyl-3-methylenecyclopentyl)acetate compound and (1,2-dimethyl-3-methylenecyclopentyl)acetaldehyde

An object of the present invention is to provide: a compound containing an imide group which is not only cured under film formation conditions of inert gas as well as air, generates no by-product and has excellent heat resistance and properties of filling and planarizing a pattern formed on a substrate, but can also form an organic underlayer film with favorable adhesion to a substrate. The present invention provides a material for forming an organic film, including: (A) a compound for forming an organic film shown by the following general formula (1A) or (1B); and (B) an organic solvent, noting that in the general formula (1A), when Wrepresents any of Rdoes not represent any of

Material for forming organic film, substrate for manufacturing semiconductor device, method for forming organic film, patterning process, and compound for forming organic film

The present invention relates to a process for preparing a 3,7-dimethylalkane compound (3): wherein n is 5 or 6, the process comprising: subjecting a nucleophilic reagent, 2,6-dimethyloctyl compound (1): wherein Mrepresents Li, Mg Z, CuZ, or CuLiZ, wherein Zrepresents a halogen atom or a 2,6-dimethyloctyl group, to a coupling reaction with an electrophilic alkyl reagent (2): wherein Xrepresents a halogen atom or a p-toluenesulfonate group, and 'n' is as defined above, to form the 3,7-dimethylalkane compound (3).

Process for preparing a 3,7-dimethylalkane compound

A material for forming an organic film using a polymer including an imide group for forming an organic underlayer film that cures under film-forming conditions in the air and in an inert gas, generates no by-product in heat resistance and embedding and flattening characteristics of a pattern formed on a substrate, also adhesiveness to a substrate for manufacturing a semiconductor apparatus, a method for forming an organic film, and a patterning process. The material includes (A) a polymer having a repeating unit represented by the following general formula (1A) whose terminal group is a group represented by either of the following general formulae (1B) or (1C), and (B) an organic solvent: wherein, Wrepresents a tetravalent organic group, and Wrepresents a divalent organic group: wherein, Rrepresents any of the groups represented by the following formula (1D), and two or more of Rs may be used in combination. 

Material for forming organic film, substrate for manufacturing semiconductor apparatus, method for forming organic film, and patterning process

The present invention relates to an acetal compound of the following general formula (1) and an acetal compound of the following general formula (2). The present invention relates to processes for preparing the acetal compound (2), comprising subjecting the acetal compound (1) to a hydrogenation reaction to form the acetal compound (2). The present invention provides a process for preparing 2,3,4,4-tetramethylcyclopentanecarbaldehyde of the following formula (3), comprising subjecting the acetal compound (2) to a hydrolysis reaction to form 2,3,4,4-tetramethylcyclopentanecarbaldehyde (3). 

Acetal compounds and processes for preparing thereof, and processes for preparing aldehyde compounds from the acetal compounds

A composition for forming an organic film contains a polymer having a partial structure shown by the following general formula (1) as a repeating unit, and an organic solvent. Each of AR1 and AR2 represents a benzene ring or naphthalene ring which optionally have a substituent; Wrepresents a particular partial structure having a triple bond, and the polymer optionally contains two or more kinds of W; and Wrepresents a divalent organic group having 6 to 80 carbon atoms and at least one aromatic ring. This invention provides: a polymer curable even under film formation conditions in an inert gas and capable of forming an organic film which has not only excellent heat resistance and properties of filling and planarizing a pattern formed in a substrate, but also favorable film formability onto a substrate with less sublimation product; and a composition for forming an organic film, containing the polymer. 

Composition for forming organic film, substrate for manufacturing semiconductor device, method for forming organic film, patterning process, and polymer

The present invention provides a process for preparing 2-methyl-N-(2'-methylbutyl) butanamide of the following formula (1):the process comprising: subjecting an &#x3b1;-arylethyl-2-methylbutylamine compound of the following general formula (2): wherein Ar represents a substituted or unsubstituted aryl group having 6 to 20 carbon atoms, to N-2-methylbutyrylation to form an N-&#x3b1;-arylethyl-2-methyl-N-(2&#x2032;-methylbutyl)butanamide compound of the following general formula (3): wherein Ar is as defined above, and removing the &#x3b1;-arylethyl group of the resulting compound (3) to form 2-methyl-N-(2&#x2032; -methylbutyl)butanamide (1). 

Process for preparing 2-methyl-N-(2'-methylbutyl)butanamide

An object of the present invention is to provide: a compound containing an imide group which is not only cured under film formation conditions of inert gas as well as air and has excellent heat resistance and properties of filling and planarizing a pattern formed on a substrate, but can also form an organic underlayer film with favorable adhesion to a substrate, and a material for forming an organic film containing the compound. A material for forming an organic film, including: (A) a compound for forming an organic film shown by the following general formula (1A); and (B) an organic solvent,   

An epoxy compound of formula (1) is provided. A resist composition comprising the epoxy compound is capable of adequately controlling the diffusion length of acid generated from an acid generator without sacrificing sensitivity. 

Epoxy compound, resist composition, and pattern forming process

Growing community of inventors

Joetsu, Japan

Takeru Watanabe