Kioxia Corporation

Toshiba Memory Corporation

Takeori Maeda

Ryoji Matsushima

Soichi Homma

Yuusuke Takano

Makoto Kawaguchi

Susumu Yamamoto

Masaaki Wakui

Hideo Aoki

Masayuki Miura

Masatoshi Fukuda

Tsutomu Fujita

Gen Toyota

Eiichi Shin

Makoto Minaminaka

Tatsuo Migita

Naoki Iwamasa

Yukio Katamura

Kazuhiro Kato

Satoshi Hongo

According to one embodiment, a method of manufacturing a semiconductor device includes forming a plurality of stacked bodies on a substrate, each of the stacked bodies includes a plurality of semiconductor chips. The method further includes forming a plurality of first wires on the stacked bodies. The first wires connecting the stacked bodies to each other. The method further includes forming a resin layer on the stacked bodies and the first wires, then thinning he resin layer until the first wires are exposed.

Semiconductor device and method of manufacturing a semiconductor device

A semiconductor device includes a semiconductor chip having a first face and a second face on an opposite side to the first face, and including semiconductor elements arranged on the first face. Columnar electrodes are arranged above the first face, and electrically connected to any of the semiconductor elements. A first member is located around the columnar electrodes above the first face. An insulant covers the columnar electrodes and the first member. The first member is harder than the columnar electrodes and the insulant. The first member and the columnar electrodes are exposed from a surface of the insulant.

Semiconductor device and manufacturing method thereof

A semiconductor device includes a first semiconductor chip having a first surface and a second surface; a first adhesive layer on the first surface; a second semiconductor chip that includes a third surface and a fourth surface, and a connection bump on the third surface. The connection bump is coupled to the first adhesive layer. The semiconductor device includes a wiring substrate connected to the connection bump. The semiconductor device includes a first resin layer covering the connection bump between the second semiconductor chip and the wiring substrate, and covers one side surface of the second semiconductor chip connecting the third surface and the fourth surface. The first adhesive layer covers an upper portion of the at least one side surface. The first resin layer covers a lower portion of the t least one side surface. The first adhesive layer and the first resin layer contact each other.

Semiconductor device and method for manufacturing the same

According to one embodiment, a mold includes a substrate clamping surface, a cavity, a suction part, a vent, an intermediate cavity, and an opening/closing part. The substrate clamping surface contacts a surface of a processing substrate. The cavity is recessed from the substrate clamping surface. The suction part is recessed from the substrate clamping surface. The vent is provided on a path between the cavity and the suction part, communicates with the cavity, is recessed from the substrate clamping surface to a vent depth. The intermediate cavity is provided between the vent and the suction part on the path, communicates with the vent, and is recessed from the substrate clamping surface to an intermediate cavity depth deeper than the vent depth. The opening/closing part opens and closes the path and is provided between the intermediate cavity and the suction part on the path.

Transfer molding method with sensor and shut-off pin

A semiconductor device includes a first semiconductor chip having a first surface and a second surface; a first adhesive layer on the first surface; a second semiconductor chip that includes a third surface and a fourth surface, and a connection bump on the third surface. The connection bump is coupled to the first adhesive layer. The semiconductor device includes a wiring substrate connected to the connection bump. The semiconductor device includes a first resin layer covering the connection bump between the second semiconductor chip and the wiring substrate, and covers one side surface of the second semiconductor chip connecting the third surface and the fourth surface. The first adhesive layer covers an upper portion of the at least one side surface. The first resin layer covers a lower portion of the at least one side surface. The first adhesive layer and the first resin layer contact each other.

Mold and transfer molding apparatus

A mold according to an embodiment includes a first surface to be in contact with a surface of a substrate to be processed. A cavity portion recedes in a first direction being away from the first surface. A vent portion recedes in the first direction and is closer to the first surface than the cavity portion. The vent portion communicates with the cavity portion and serves as a discharge path for gas in the cavity portion. A suction portion recedes in the first direction and is farther from the first surface than the vent portion. The suction portion communicates with the vent portion. A first opening/closing portion is provided between the vent portion and the suction portion, and opens and closes or narrows down the discharge path. A second opening/closing portion is provided between the first opening/closing portion and the suction portion, and opens and closes the discharge path.

Mold

According to one embodiment, a mold device includes a first mold. The first mold includes a substrate clamping surface, a cavity, a suction part, a vent, first and second intermediate cavities and an opening/closing part. The substrate clamping surface contacts a surface of a processing substrate. The cavity is recessed from the substrate clamping surface. The suction part is recessed from the substrate clamping surface. The vent is provided on a path between the cavity and the suction part, and is recessed from the substrate clamping surface to a vent depth. The first intermediate cavity is provided between the vent and the suction part, and is recessed from the substrate clamping surface. The second intermediate cavity is provided between the first intermediate cavity and the suction part, and is recessed from the substrate clamping surface to a second intermediate cavity depth. The opening/closing part opens and closes the path.

Mold device

A semiconductor device includes a wiring substrate, a first semiconductor element, a second semiconductor element, a bump, a bonding portion, and a resin portion. The second semiconductor element is between the wiring substrate and the first semiconductor element. The bump is between the first and second semiconductor elements and electrically connects the first and second semiconductor elements. The bonding portion is between the first and second semiconductor elements, bonds the first semiconductor element to the second semiconductor element, and has a first elastic modulus. The resin portion has a second elastic modulus higher than the first elastic modulus. The resin portion is between the first and second semiconductor elements. The first semiconductor element is between a second portion of the resin portion and the wiring substrate. A third portion of the resin portion is overlapped with the first and second semiconductor elements.

Growing community of inventors

Mie, Japan

Takeori Maeda