Hitachi, Ltd.

Hitachi Displays, Ltd.

Panasonic Liquid Crystal Display Co., Ltd.

Japan Display Inc.

Other

Hitachi Device Engineering Co., Ltd.

Hiatchi, Ltd.

Takeo Shiba

Mutsuko Hatano

Shinya Yamaguchi

Hajime Akimoto

Yoichi Tamaki

Shigeyuki Nishitani

Kiyoshige Kinugawa

Mitsuharu Tai

Makoto Ohkura

Yoshirou Mikami

Kazuhiro Ohnishi

Takashi Uchino

Takashi Kobayashi

Takahide Ikeda

Hiromi Shimamoto

Toshiyuki Kikuchi

Tadashi Arai

Tohru Nakamura

Seong-kee Park

Yoshinobu Kimura

Kazuo Takeda

Masahiko Ando

Akihisa Uchida

Kazuhiko Sagara

Masakazu Saito

Seong-Kee Park

Takeshi Satou

Sedng-Kee Park

Katsuyoshi Washio

Tomihiro Hashizume

Toshihiko Itoga

Masao Kawamura

Takahiro Onai

Toshihiko Takakura

Yuji Suwa

Masaaki Fujimori

Shigeo Kuroda

Mikinori Kawaji

Mitsuo Nanba

Hideo Sato

Masahiro Kawasaki

Hiroshi Fukuda

Tokuo Kure

Yukio Takasaki

Takahiro Nagano

Masatada Horiuchi

Hironobu Abe

Kazuhiko Horikoshi

Ryoji Oritsuki

Kazuo Nakazato

Takuo Tamura

Miwako Nakahara

Yasushi Nakano

Kiyoji Ikeda

Klyoshi Ogata

Jun Gotou

Motoyasu Terao

Satoshi Yamamoto

Masao Kondo

Toshiki Kaneko

Takashi Hashimoto

Yoshiyuki Kaneko

Hideyuki Matsuoka

Noriyuki Sakuma

Keiichi Higeta

Katsumi Ogiue

Shuji Imazeki

Hisayuki Higuchi

Noriyuki Homma

Kazuyoshi Torii

Tetsuya Hayashida

Yoshiaki Toyota

Norio Nakazato

Osamu Kasahara

Kiichiro Mukai

Kunihiko Yamaguchi

Masayoshi Ishibashi

Midori Kato

Takahiro Kamo

Takahiro Kumauchi

Hisashi Ikeda

Naohiro Furukawa

Yasushiro Nishioka

Hiroshi Shinriki

Ichiro Mitamura

Nobuo Fujieda

Yo Takeuchi

Yoshihiro Mikami

Nakazato Kazuo

Masayoshi Saitoh

The invention provides an image display device that has an especially satisfactory display quality for animated images, and sufficiently suppresses the irregularities of display quality among pixels. The image display device includes a light emitting drive means that drives a light emitting means, based on an analog display signal inputted to the pixels, and a light emitting control switch for controlling a light-on or light-off of the light emitting means on one end of the light emitting drive means in each pixel.

Image display device

A wiring board with an electronic device comprising a plurality of trenches arranged in parallel on a substrate, a common trench communicating the plurality of trenches with each other at one of their ends on the substrate, a metal layer formed at the bottom of the plurality of trenches, and an electrode layer connected with the metal layer and formed on a bottom of the common trench, wherein the electrode layer on the bottom of the common trench constitutes a source electrode or a drain electrode of a field effect transistor, whereby the wiring board and an electronic circuit having a good fine wire pattern and a good narrow gap between the patterns using a coating material can be formed, and a reduction for a cost of an organic thin film electronic device and the electronic circuit can be attained since they can be realized through a development of a printing technique.

Wiring board and method for manufacturing the same

A thin-film transistor includes an insulating substrate, a source electrode, and a drain electrode, disposed over the top of the insulating substrate, a semiconductor layer electrically continuous with the source electrode, and the drain electrode, respectively, a gate dielectric film formed over the top of at least the semiconductor layer; and a gate electrode disposed over the top of the gate dielectric film so as to overlap the semiconductor layer. Further, a first bank insulator is formed so as to overlie the source electrode, a second bank insulator is formed so as to overlie the drain electrode, and the semiconductor layer, the gate dielectric film, and the gate electrode are embedded in a region between the first bank insulator, and the second bank insulator.

Electronic device

An image display device incorporates a group of pixels of two or more types, each pixel including a light source whose primary wavelength is specific to the type of pixel; a generating device for generating analog pixel signals to be input to the group of pixels from input digital pixel data, wherein the generating device has a converter to convert input digital pixel data into different output digital pixel data appropriate for each type of pixel where the output digital pixel data contains more bits than the input digital pixel data; and an input device for inputting the analog pixel signals to the group of pixels, each pixel including a light emission driver for driving the light source according to the analog pixel signal. An organic EL display device having individual R, G, and B light emission elements enables displaying in desired colors and controllable tones with reduced packaging area for the components of the organic EL display.

A method of manufacturing a thin-film transistor device improves performance of a complementary TFT circuit incorporated in a thin- and light-weighted image display device or a flexible electronic device, and reduces power consumption manufacturing cost. Electrodes forming n-type and p-type TFTs and an organic semiconductor are made of the same material in both types of TFT by a solution-process and/or printable process method. A first polarizable thin-film is formed on an interface between a gate insulator and a semiconductor, and a second polarizable thin film provided on an interface between source and drain electrodes and the semiconductor film. A complementary thin-film transistor device is manufactured by selectively exposing either the n-type TFT area or the p-type TFT area to light to remove the polarizing function from the first and second polarizable thin films.

Thin-film transistor device and a method for manufacturing the same

An electrode substrate in which a lower electrode and an upper electrode are well positioned by way of an insulating film could not be formed by a printing method since positional displacement is caused. The cost was increased outstandingly when using photomasks for positioning. In the present invention, positional displacement does not occur even when using the printing method since the upper electrode and the lower electrode are positioned in self-alignment. Accordingly, a semiconductor device such as a flexible substrate using an organic semiconductor can be formed with low cost by using the printing method.

Method of manufacturing a semiconductor device having an organic thin film transistor

A thin film semiconductor device is provided which includes an insulating substrate, a Si thin film formed over the insulating substrate, and a transistor with the Si thin film as a channel thereof. The Si thin film includes a polycrystal where a plurality of narrow, rectangular crystal grains are arranged. A surface of the polycrystal is flat at grain boundaries thereof. Also, an average film thickness of the boundaries of crystals of the Si thin film ranges from 90 to 110% of an intra-grain average film thickness.

Thin film semiconductor device

This invention provides an efficient image processing apparatus having merits as the handiness and visibility of paper and the multi-functionality of a computer, enabling trial and error with paper media without capturing all images previously. The apparatus comprises an image capturing unit for electronically capturing paper images by a photo-sensor; an image editing unit for editing such as clipping of partial image or scaling; a user interface unit for receiving user's commands regarding the image editing; an image memory unit for storing; and an image display unit for displaying the images in the image memory unit. An image displaying function is provided on a transparent plane. Photo-sensors are on the plane, and image capturing unit and image display unit are integrated to form an image capturing and display unit. A user gains an operability compatible with human instinct, ignoring a difference between paper and electronic medium.

Image processing apparatus

An n-type TFT and a p-type TFT are realized by selectively changing only a cover coat without changing a TFT material using an equation for applying the magnitude of a difference in the Fermi energy between an interface of semiconductor and an electrode and between an interface of semiconductor and insulator. At this time, in order to configure a predetermined circuit, the process is performed, as a source electrode and a drain electrode of the p-type TFT and a source electrode and a drain electrode of the n-type TFT being connected all, respectively, and an unnecessary interconnection is cut by irradiating light using a scanning laser exposure apparatus or the like.

Organic thin film transistor array and method of manufacturing the same

In an image display device comprising a display part configured with a plurality of pixels and a peripheral integrated circuit which controls the display part, the display device is provided on a support substrate which has high durability for the impact and the bending, the pixel circuit is configured with an organic semiconductor TFT, the peripheral integrated circuit is configured with a low-temperature poly Si-TFT, this peripheral integrated circuit is provided on a support substrate of the display device being removed the support substrate when being manufactured, and the pixel circuit and the peripheral integrated circuit are connected with the same wire layer.

Thin film transistor device, image display device and manufacturing method thereof

Growing community of inventors

Kodaira, Japan

Takeo Shiba