Sony Corporation

Sharp Kabushiki Kaisha Corporation

Takeo Oku

Masanori Murakami

Akira Otsuki

Masaru Wada

Chihiro Uchibori

Tsukasa Doi

Katsuji Iguchi

It is intended to realize an ohmic electrode for III-V compound semiconductors such as GaAs semiconductors which has practically satisfactory characteristics. Provided on an n.sup.+ -type GaAs substrate is an ohmic electrode in which an n.sup.++ -type regrown GaAs layer regrown from the n.sup.+ -type GaAs substrate and a NiGe film containing precipitates composed of .alpha.'-AuGa are sequentially stacked. The ohmic electrode may be fabricated by sequentially stacking a Ni film, Au film and Ge film on the n.sup.+ -type GaAs substrate, then patterning these films by, for example, lift-off, and thereafter annealing the structure at a temperature of 400.about.750.degree. C. for several seconds to several minutes.

Ohmic electrode, its fabricating method and semiconductor device

An ohmic electrode for III-V compound semiconductors such as GaAs semiconductors which has practically satisfactory characteristics is disclosed. A non-single crystal InAs layer, Ni film, WSi film and W film are sequentially deposited on an n.sup.+ -type GaAs substrate by sputtering, etc. and subsequently patterned by lift-off, etc. to make a multi-layered structure for fabricating ohmic electrodes. The structure is then annealed first at, e.g. 300.degree. C. for 30 minutes and next at, e.g. 650.degree. C. for one second to fabricate an ohmic electrode.

Multi-layered structure for ohmic electrode fabrication

A semiconductor device including, a wiring layer whose main component is copper being formed on a base via a barrier layer of amorphous tantalum carbide.

Semiconductor device having a copper wiring layer formed on a base via a

Method for fabricating ohmic electrode and multi-layered structure for

An ohmic electrode for III-V compound semiconductors such as GaAs semiconductors is provided to have satisfactory practical characteristics. Provided on an n.sup.+ -type GaAs substrate is an ohmic electrode in which an n.sup.++ -type regrown GaAs layer regrown from the n.sup.+ -type GaAs substrate and a NiGe film containing particles of a precipitate composed of .alpha.'-AuGa are sequentially stacked. The ohmic electrode may be fabricated by sequentially stacking a Ni film, Au film and Ge film on the n.sup.+ -type GaAs substrate, then patterning these films by, for example, lift-off, and thereafter annealing the structure at a temperature of 400.about.750.degree. C. for several seconds to several minutes.

Ohmic electrode, its fabrication method and semiconductor device

A semiconductor device comprises a plurality of transistors A semiconductor device comprising a plurality of transistors formed on a semiconductor substrate and a metal interconnection layer connected to at least one of the transistors, wherein the metal interconnection layer is composed of a single layer or multi layers, the single layer or at least one layer of the multi layers being formed of copper or a copper alloy, and is connected to at least one transistor wholly or partially through a barrier layer; and at least one of the transistor is controlled on its threshold voltage by a selective ion implantation after formation of the metal interconnection layer.

Growing community of inventors

Kyoto, Japan

Takeo Oku