Kabushiki Kaisha Toshiba

Ebara Corporation

Toshiba Electronic Devices & Storage Corporation

Takeo Kubota

Atsushi Shigeta

Kenya Ito

Tetsuji Togawa

Masaya Seki

Masayuki Nakanishi

Kenji Iwade

Kenro Nakamura

Gen Toyota

Hiroyuki Yano

Makoto Honda

Gaku Minamihaba

Hiroyuki Kanaya

Yukiteru Matsui

Tamami Takahashi

Hirokazu Ezawa

Yoshikuni Tateyama

Takeshi Nishioka

Yoshihiro Minami

Kaori Yomogihara

Daisaku Fukuoka

According to one embodiment, a method for manufacturing a semiconductor device is disclosed. The method can include forming a second layer covering a first layer on a first region of a semiconductor substrate. The semiconductor substrate includes the first region and a second region. The first layer covers the second region and a portion of the first region. First openings are formed. The method can include removing the first layer on the second region using the second layer as a mask. The method can include forming an impurity region including an n-type impurity in the second region. The method can include removing the second layer, and growing silicon layers inside the first openings and on the second region. In addition, the method can include polishing a portion of each of the silicon layers using the first layer as a stopper.

Method for manufacturing semiconductor device

A method for manufacturing a semiconductor device makes it possible to efficiently polish with a polishing tape a peripheral portion of a silicon substrate under polishing conditions particularly suited for a deposited film and for silicon underlying the deposited film. The method includes pressing a first polishing tape against a peripheral portion of a device substrate having a deposited film on a silicon surface while rotating the device substrate at a first rotational speed, thereby removing the deposited film lying in the peripheral portion of the device substrate and exposing the underlying silicon. A second polishing tape is pressed against the exposed silicon lying in the peripheral portion of the device substrate while rotating the device substrate at a second rotational speed, thereby polishing the silicon to a predetermined depth.

A polishing apparatus can effectively prevent abrasive particles from falling off a polishing tape during polishing. The polishing apparatus includes: a polishing head for polishing a peripheral portion of a substrate by pressing a surface of a polishing tape, having abrasive particles fixed on the surface, against the peripheral portion of the substrate while allowing the polishing tape to travel in one direction; and a conditioning apparatus, disposed upstream of the polishing head in the traveling direction of the polishing tape, for conditioning the surface of the polishing tape in advance in order to prevent the abrasive particles from falling off the surface of the polishing tape during polishing.

Polishing apparatus and polishing method

A first electrode film, a ferroelectric film, and a second electrode film are accumulated above a semiconductor in this order, a hard mask is accumulated above the second electrode, scrub cleaning is performed on the surface of the hard mask with an surfactant, the hard mask on which the scrub cleaning is performed has been patterned according to a planar shape of a ferroelectric capacitor, and etching is performed by using as a hard mask the hard mask that has been patterned.

Fabricating method of nonvolatile semiconductor storage apparatus

A polishing apparatus has a polishing tape (), a supply reel () for supplying the polishing tape () to a contact portion () at which the polishing tape () is brought into contact with a notch portion () of a substrate (), and a take-up reel () for winding up the polishing tape () from the contact portion (). The polishing apparatus also has a first guide portion () having as guide surface () for supplying the polishing tape () directly to the contact portion (), and a second guide portion () having a guide surface for supplying the polishing tape () tot the take-up reel (). The guide surface () of the first guide portion () and/or the guide surface of the second guide portion () has a shape corresponding to a shape of the notch portion () of the substrate ().

A peripheral processing method includes: by at least one of locally heating the periphery of a workpiece including a silicon-based substrate and selectively supplying reacting activation species to the periphery, allowing oxidation rate on the periphery to be higher than oxidation rate of native oxide film on a surface of the silicon-based substrate, thereby forming a first oxide film along the periphery, the first oxide film being thicker than the native oxide film. A method of manufacturing a semiconductor device includes: forming an insulating film on a frontside and periphery of a silicon-based substrate; forming a workpiece by selectively etching away the insulating film to expose a portion of the frontside of the silicon-based substrate; forming a first oxide film at an exposed part of the silicon-based substrate, the exposed part being formed in the insulating film of the periphery during the selective etching; depositing a metal film on the frontside of the workpiece after the first oxide film is formed; and allowing the metal film to react with the portion of the frontside of the silicon-based substrate by heat treatment.

Peripheral processing method and method of manufacturing a semiconductor device

Disclosed is a method for polishing a surface of a substrate containing Ru or a Ru compound in a surface region, said method comprising a polishing step with a polishing liquid containing tetravalent cerium ions. The polishing liquid is prepared by adding a compound having a tetravalent cerium ion or its solution to a solvent in or immediately before the polishing step of the substrate.

Polishing method and polishing liquid

A polishing method includes supplying a slurry onto a pad disposed above a turntable while rotating the turntable, and polishing a workpiece disposed on the pad by pressing the workpiece to the pad, and detecting an ion concentration of a specific ion included in the slurry on the pad by using an ion test paper during the polishing.

Polishing method and polishing system

A substrate processing apparatus polishes a to-be-polished portion of a semiconductor substrate with a polishing tape. Part of the polishing tape is heated in advance. Part of the polishing tape is deformed conforming to a shape of the to-be-polished portion. Part of the deformed polishing tape is brought into contact with the to-be-polished portion of the substrate. The substrate and polishing tape are moved relative to each other.

Substrate processing method and substrate processing apparatus

A method of judging a residual film on a sample by an optical measurement, the sample including a first metal film whose reflectance is changed depending on a wavelength of measuring light, and an insulating film formed above the first metal film, and the residual film being a second metal film above the insulating film, the method comprising irradiating the sample with a measuring light so as to measure a change in intensity of light reflected from the sample depending on the wavelength of the measuring light, thereby obtaining a reflectance spectrum curve, and dividing the reflectance spectrum curve into a plurality of wavelength regions so as to judge presence or absence of the second metal film above the insulating film depending on a waveform in each of the wavelength regions of the reflectance spectrum curve.

Method of judging residual film by optical measurement

A method of inspecting a process for manufacturing a semiconductor device, used to determine the status of a processing operation during the manufacturing process, according to the embodiment of the present invention, comprises: detecting an image of a desired area of a surface of a semiconductor workpiece after it has been subjected to the processing operation, using an image signal detector; detecting image signal intensity at each pixel of a plurality of pixels of the image signal detector; and determining the status of the processing operation based on the relationship between the image signal intensity and the number of pixels at each of certain levels of the image signal intensity. A method of manufacturing a semiconductor device is made by utilizing the above-described inspection method.

Method of inspecting process for manufacturing semiconductor device and method of manufacturing semiconductor device

A method of manufacturing a semiconductor device, which comprises the steps of providing a substrate having a groove on the surface thereof, forming a burying film on the substrate to thereby fill the groove with the burying film, performing a first polishing step to polish the burying film by means of a CMP method, the polishing being suspended before the substrate is exposed, and performing a second polishing step to polish the burying film by means of a CMP method until part of the burying film which is disposed outside the groove is removed. The time to finish polishing of the second polishing step is determined based on a film thickness of the burying film which is left remained after finishing the first polishing step. The first polishing step may be performed under a condition which differs from that of the second polishing step.

Growing community of inventors

Kawasaki, Japan

Takeo Kubota