Asahi Kasei Kogyo Kabushiki Kaisha

Takeo Kimura

Kaoru Ohmura

Ichiro Shibasaki

Tetsuo Shiga

Hidehiko Kobayashi

Kageyasu Akashi

Takeki Matsui

Yoshio Hayashi

Tatsumi Arakawa

Minoru Akiyama

Kohei Nonaka

Makoto Gonmori

Masahiro Koyama

Muneaki Kimura

Yoshinobu Ito

Keiji Kuboyama

Tetsuhiro Kusunose

Masaru Ozaki

Hiroshi Imafuku

Ryohei Koyama

Masaru Matsuura

An indium-antimony complex crystalline semiconductor consisting essentially of crystals of an indium-antimony compound and crystals of indium alone is disclosed. The atomic ratio of the total indium content to the antimony content in the semiconductor is in the range of from 1.1/1 to 1.7/1. A process for producing such semiconductor is also disclosed. In the process, the vapors of indium and antimony are deposited on a substrate in such a manner that the arrival rate ratio of indium to antimony is controlled to be within the range of from 1.1/1 to 1.7/1.

Indium-antimony complex crystal semiconductor and process for production

A post-activation type dry image forming material comprising (I) a silver salt component reducible to free silver upon light exposure and including silver iodide; (II) a redox reactive composition capable of making a visual change by a redox reaction of said composition, said reaction being initiated by heating in the presence of free silver; (III) an oxidizing agent for free silver which has an oxidizing capacity for free silver but is rendered photosensitive by heating and which, upon light exposure after said heating, is suppressed with respect to the oxidizing capacity for free silver and capable of catalytically promoting the redox reaction of said composition; and (IV) a photoreactive oxidizing agent, upon light exposure, capable of returning the reduced oxidizing agent for free silver to the original state. A post-activation type dry image forming material which is extremely excellent in stability of the raw image forming material, that is, can be stored in a light room for a time as long as a period of the order of years and which has high sensitivity can, for the first time, be realized by the ingenious combination of components. The effect of the interaction between the components, especially between the components (I), (III) and (IV) is noticeable in imparting to the present image forming material an extremely high stability of the raw image forming material.

Post-activation type dry image forming material

A mold-packaged magnetoelectric transducer element such as a Hall element or a magnetoresistance element comprises a magnetosensitive thin layer, electrodes formed on the thin layer for lead-out connection, an unwindowed film support, leads formed on one surface of the film support, conductive resin for connecting the electrodes and the leads, mold resin packaging on the one surface of the film support the remaining except parts of the leads.

Magnetoelectric transducer and fabrication method therefor

A method for manufacturing a fine-patterned thick film conductor structure free from ununiformity in film thickness comprises steps of forming resist on a thin metal plate at areas other than land areas, electroplating the thin metal plate using the thin metal plate as a cathode electrode to form conductors having a circuit density of no less than three lines/mm and a thickness of 15-200 .mu.m, bonding the electroplated thin metal plate to an insulative substrate with the thin metal plate side facing up and etching the thin metal plate. The fine-patterned conductors are suited for use in small-sized coils, high density connectors and high density wirings. Further disclosed is a method for manufacturing a fine-patterned thick film printed circuit board free from side protrusion comprising steps of forming resist on a thin metal plate at areas other than land areas, electroplating the thin metal plate to a thickness of 0.3-10 .mu.m at a current density of 0.05-2 A/dm.sup.2, electroplating the thin metal plate to a desired final thickness at a current density of 3-20 A/dm.sup.2, and removing all or the areas other than the land areas of the thin metal plate.

Method for manufacturing a fine-patterned thick film conductor structure

In manufacturing a fine-patterned thick film conductor structure, a thin film conductor layer having a film thickness of 0.1-10 .mu.m is formed on an insulating substrate and conductive material is then electroplated on the thin film conductor layer to the thickness of 34.9-190 .mu.m under the condition of a cathode current density of no less than 5 A/dm.sup.2. In patterning the conductors, a film thickness-to-conductor interspacing ratio is selected to be no less than 1.4 to prevent widthwise thickening of the conductors in the electroplating process. Resulting conductor structure has a circuit density of no less than 5 lines/mm and a film thickness of 35-200 .mu.m. It is useful for a high density printed circuit board and a miniature coil.

Fine-patterned thick film conductor structure and manufacturing method

An article for electrical use such as insulative substrates, electrical circuit borads and electrical elements, wholly or partly consisting out of an aromatic polyamide-imide having a reduced viscosity of from about 0.3 to 1.5, which polyamide-imide may contain a granular material dispersed therein, and a composition comprising 100 parts by weight of said polyamide-imide and additional about 100 to 4,000 parts by weight of a granular material and optionally about 10 to 10,000 parts by weight of a polar organic solvent.

Polyamide-imide compositions and articles for electrical use prepared

A heat developable silver image forming material comprising:

Heat developable silver image forming materials

A method and apparatus for forming an image using an image forming sheet that is normally non-photosensitive but can be rendered photosensitive by preheating and is exposed at the preheated area to a light image to form therein a latent image and then heat-developed to form a visible image. After preheating, the preheated area is cooled by cooling means prior to exposure.

Image forming method and apparatus therefor

An organic polar solvent-soluble aromatic polyamide-imide having therein aromatic nuclei linked at their respective 1 - and 3 - positions and having therein amide linkages and terminal groups unsubstituted or partially substituted with acrylate or methacrylate groups is found to impart excellent heat resistance and insulating property to a photoresist composition produced therefrom.

Polymers for use in heat resistant photoresist composition and process

An organic polar solvent-soluble aromatic polyamide-imide having therein aromatic nuclei linked at their respective 1 - and 3 -positions and having therein amide linkages and terminal groups partially substituted with cinnamate groups is found to impart excellent heat resistance and insulating property to a photoresist composition produced therefrom.

Heat resistant photoresist composition and process for preparing the same

In a compound semiconductor device such as a magnetoresistance element or Hall element having a compound semiconductor portion such as of InSb and an electrode portion, a portion of the compound semiconductor portion is exposed to energy irradiation to be converted into an alloy state or amorphous state and rendered conductive to form the electrode portion. The portion rendered conductive is contiguous to and in ohmic contact with the unexposed portion of the compound semiconductor and used as a shorting bar electrode or an external lead bonding pad.

Compound semiconductor device having a semiconductor-converted

A process for preparing a silver salt of an organic carboxylic acid comprising reacting an alkali metal salt of the organic carboxylic acid with a water-soluble silver salt, and wherein there is used as the reaction solvent a mixture consisting of at least one water-soluble or partially water-soluble C.sub.3 -C.sub.8 alcohol and water and having a mixing volume ratio of 1/5 to 5/1. The silver salt of the organic carboxylic acid prepared in high yield according to the process of the present invention is in uniformly finely divided form of high purity and suitable for use in photographic materials.

Process for preparing silver salt of organic carboxylic acid

Vesicles are suspended in a lipophilic ion solution and the lipophilic ion concentration is changed by the permeation of the lipophilic ions into the vesicles. An electrode selectively responsive to the lipophilic ions is immersed in the suspension to detect the time-change rate of the electrode potential, thereby to obtain a change in the lipophilic ion concentration with respect to time, from which are measured membrane characteristics of the vesicles, such as the permeability of a vesicular membrane to the lipophilic ions.

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Fuji, Japan

Takeo Kimura