Kokusai Electric Corporation

Hitachi-kokusai Electric Inc.

Takeo Hanashima

Takaaki Noda

Hiroaki Hiramatsu

Tsukasa Kamakura

Hiroshi Ashihara

Shingo Nohara

Yoshiro Hirose

Hidenari Yoshida

Satoshi Shimamoto

Takafumi Sasaki

Koei Kuribayashi

Atsushi Umekawa

Mikio Ohno

Hiroto Yamagishi

Masaaki Ueno

Kiyohiko Maeda

Masakazu Shimada

Akira Hayashida

Kiyohisa Ishibashi

Kotaro Konno

Haruo Morikawa

Masanao Osanai

Shuhei Saido

Kazuhiro Harada

Kenji Kameda

Takatomo Yamaguchi

Kosuke Takagi

Shinya Ebata

Jie Wang

Sadao Hisakado

Mamoru Sueyoshi

Shin Sone

Hiroki Hatta

Motoshi Sawada

Hiroyuki Miyagishi

There is included providing a substrate in a process chamber; and forming a film on the substrate in the process chamber by supplying an inert gas from a first supplier, supplying a first processing gas from a second supplier, and supplying an inert gas from a third supplier to the substrate, the third supplier being installed at an opposite side of the first supplier with respect to a straight line that passes through the second supplier and a center of the substrate and is interposed between the first supplier and the third supplier, to the substrate, wherein in the act of forming the film, a substrate in-plane film thickness distribution of the film is adjusted by controlling a balance between a flow rate of the inert gas supplied from the first supplier and a flow rate of the inert gas supplied from the third supplier.

Processing method, method of manufacturing semiconductor device, processing apparatus, and recording medium

There is provided a technique that includes: forming a film on a substrate including a recess formed on a surface of the substrate by performing a cycle a predetermined number of times, the cycle including: (a) supplying a precursor gas to the substrate; and (b) supplying a reaction gas to the substrate, wherein in (a), the precursor gas is supplied to the substrate separately a plurality of times, and a processing condition under which the precursor gas is supplied for a first time is set to a processing condition under which self-decomposition of the precursor gas is capable of being more suppressed than a processing condition under which the precursor gas is supplied for at least one subsequent time after the first time.

Method of processing substrate, method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

There is provided a technique that includes forming a film on a substrate by performing a cycle a predetermined number of times, the cycle including: (a) supplying a precursor gas from a precursor gas supply line into a process chamber in which the substrate is accommodated; and (b) supplying a reaction gas into the process chamber in which the substrate is accommodated, wherein in (a), the precursor gas is divisionally supplied to the substrate a first plural number of times, the precursor gas is pre-filled in a storage installed in the precursor gas supply line and then supplied into the process chamber when the precursor gas is supplied for the first time, and an inside of the process chamber is exhausted before supplying the precursor gas for the second time.

Substrate processing method, recording medium, and substrate processing apparatus

There is provided a gas supply system including a supplying part connected to a reaction vessel and a blocking part provided at an upstream side of the supplying part and directly connected to the supplying part without providing a pipe between the blocking part and the supplying part. The gas supply system further including a switching part provided at an upstream side of the blocking part and configured to supply a gas into the reaction vessel in cooperation with the blocking part and an exhaust part configured to exhaust an inside of a pipe provided between the switching part and the blocking part.

Substrate processing apparatus and method of manufacturing semiconductor device

There is provided a technique that cleans a member in a process container by performing a cycle a predetermined number of times, the cycle including: (a) separately supplying a cleaning gas and an additive gas that reacts with the cleaning gas, respectively, from any two supply parts among at least three supply parts into the process container after processing a substrate; and (b) separately supplying the cleaning gas and the additive gas, respectively, from any two supply parts among the at least three supply parts into the process container, wherein at least one selected from the group of the cleaning gas and the additive gas is supplied from different supply parts in (a) and (b).

Method of cleaning member in process container, method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

A technique of manufacturing a semiconductor device includes forming a film on a substrate in a process chamber by supplying a precursor and a reactant to the substrate under a first temperature at which the precursor and the reactant are not pyrolyzed, and purging, after performing the act of forming the film, an interior of the process chamber by supplying at least one selected from a group consisting of a plasma-excited gas, an alcohol, and a reducing agent into the process chamber under a second temperature equal to or lower than the first temperature.

Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

Described herein is a technique capable of improving the uniformity of the film formation among the substrates. According to the technique described herein, there is provided a configuration including: a reaction tube having a process chamber where a plurality of substrates are processed; a buffer chamber protruding outward from the reaction tube and configured to supply a process gas to the process chamber, the buffer chamber including: a first nozzle chamber where a first nozzle is provided; and a second nozzle chamber where a second nozzle is provided; an opening portion provided at a lower end of an inner wall of the reaction tube facing the buffer chamber; and a shielding portion provided at a communicating portion of the opening portion between the second nozzle chamber and the process chamber.

There is included providing a substrate in a process chamber; and forming a film on the substrate in the process chamber by supplying an inert gas from a first supplier, supplying a first processing gas from a second supplier, and supplying an inert gas from a third supplier to the substrate, the third supplier being installed at an opposite side of the first supplier with respect to a straight line that passes through the second supplier and a center of the substrate and is interposed between the first supplier and the third supplier, to the substrate, wherein in the film, a substrate in-plane film thickness distribution of the film is adjusted by controlling a balance between a flow rate of the inert gas supplied from the first supplier and a flow rate of the inert gas supplied from the third supplier.

There is provided a technique of cleaning an interior of a supply part by performing a cycle a predetermined number of times, the cycle including: (a) supplying a first gas, which is one of a cleaning gas and an additive gas that reacts with the cleaning gas, from the supply part toward an interior of a process container in which a substrate has been processed by supplying a processing gas from the supply part to the substrate; and (b) supplying a second gas, which is the other one of the cleaning gas and the additive gas and is different from the first gas, from the supply part toward the interior of the process container in a state in which a part of the first gas remains in the supply part after supply of the first gas is stopped.

Method of cleaning, method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

There is provided a technique that includes forming a film on at least one substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: (a) performing a first set a number of times, the first set including non-simultaneously performing: supplying a precursor to the at least one substrate from at least one first ejecting hole of a first nozzle arranged along a substrate arrangement direction of a substrate arrangement region where the at least one substrate is arranged; and supplying a reactant to the at least one substrate; and (b) performing a second set a number of times, the second set including non-simultaneously performing: supplying the precursor to the at least one substrate from at least one second ejecting hole of a second nozzle arranged along the substrate arrangement direction of the substrate arrangement region; and supplying the reactant to the at least one substrate.

Method of processing substrate, substrate processing apparatus, recording medium, and method of manufacturing semiconductor device

There is provided a technique that includes: forming an initial oxide layer on a surface of a substrate by performing a set m times (where m is an integer equal to or greater than 1), the set including non-simultaneously performing: (a) oxidizing the surface of the substrate under a condition that an oxidation amount of the substrate increases from an upstream side to a downstream side of a gas flow by supplying an oxygen-containing gas and a hydrogen-containing gas to the substrate; and (b) oxidizing the surface of the substrate under a condition that the oxidation amount of the substrate decreases from the upstream side to the downstream side of the gas flow by supplying the oxygen-containing gas and the hydrogen-containing gas to the substrate; and forming a film on the initial oxide layer by supplying a precursor gas to the substrate.

There is provided a substrate processing apparatus including a process chamber defined at least by a reaction tube and a furnace opening part provided at a lower portion of the reaction tube; a nozzle provided at the furnace opening part and extending from the furnace opening part to an inside of the reaction tube; a gas supply system provided at an upstream side of the nozzle; a blocking part provided at a boundary between the gas supply system and the nozzle; and a controller configured to control the gas supply system and the blocking part such that the blocking part co-operates with the gas supply system to supply gases into the process chamber through the nozzle.

There is provided a technique that includes: a process chamber accommodating a substrate support supporting substrates in multiple stages to process the substrates; a supply buffer part adjacent the process chamber; a first gas supply part installed in the supply buffer part; a second gas supply part installed in the supply buffer part; an inner wall installed between the supply buffer part and the process chamber, on which a plurality of slits are formed to correspond to the substrates; and a maintenance port disposed at a lower end of the inner wall, wherein the first gas supply part includes a first gas nozzle having a supply hole that supplies first gas into the supply buffer part.

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Toyama, Japan

Takeo Hanashima