Shindengen Electric Manufacturing Company Limited

Takeo Anazawa

Toshiyuki Takemori

Yuji Watanabe

Masato Kishi

Toshitaka Akimoto

Provided is a semiconductor apparatus includes: a gate electrode disposed inside a trench and opposedly facing a p type base region with a gate insulating film interposed therebetween on a portion of a side wall; a shield electrode disposed inside the trench and positioned between the gate electrode and a bottom of the trench; an electric insulating region disposed inside the trench, the electric insulating region expanding between the gate electrode and the shield electrode, and further expanding along the side wall and the bottom of the trench so as to separate the shield electrode from the side wall and the bottom; a source electrode electrically connected to an ntype source region and the shield electrode, wherein the shield electrode has a high resistance region positioned on an ndrain region side, and a low resistance region positioned on a gate electrode side.

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Saitama, Japan

Takeo Anazawa