Shin-Etsu Chemical Co., Ltd.

Shin-Etsu Handotai Co., Ltd.

Naoetsu Electronics Co., Ltd.

Takenori Watabe

Hiroshi Hashigami

Hiroyuki Ohtsuka

Hiroyuki Otsuka

Ryo Mitta

Satoyuki Ojima

Shun Moriyama

Takashi Murakami

Masatoshi Takahashi

Mitsuhito Takahashi

Naoki Ishikawa

Shintarou Tsukigata

Yoko Endo

Toyohiro Ueguri

Chikara Mori

Takao Abe

Shigenori Saisu

Takeshi Akatsuka

Yoko Matsuo

Toshifumi Matsuoka

Takahiro Sakatsume

Kazuo Hara

Hideo Ooiwa

Tsutomu Onishi

A method for producing a crystalline oxide semiconductor film in which, a crystalline oxide semiconductor layer and a light absorbing layer are laminated on a substrate, the light absorbing layer is irradiated with light to decompose the light absorbing layer and separate the crystalline oxide semiconductor layer and the substrate to produce a crystalline oxide semiconductor film. This provides a method for industrially advantageously producing a crystalline oxide semiconductor film, for example, a crystalline oxide semiconductor film useful for a semiconductor device (particularly a vertical element).

Method for producing a crystalline oxide semiconductor film and a gallium oxide film, and a method for producing a vertical semiconductor device

A method for manufacturing a gallium oxide film where a mist generated by atomizing a raw-material solution or by forming a raw-material solution into droplets is conveyed using a carrier gas, the mist is heated, and the mist is subjected to a thermal reaction on the substrate to form a film, whereas the raw-material solution, a raw-material solution containing at least a chloride ion and a gallium ion is used, and the mist is heated for 0.002 seconds or more and 6 seconds or less. This provides a method for manufacturing a α-gallium oxide film at low cost with excellent film forming speed.

Method for manufacturing gallium oxide film

A film-forming method in which film-formation is performed by heat-treating a mist of a raw material solution, the method including: dissolving metal gallium in an acidic solution containing at least one of hydrobromic acid and hydroiodic acid to prepare the raw material solution having a concentration of a metal impurity of less than 2%; and atomizing the raw material solution into a mist, and performing film-forming. This method can provide a film-forming method that can form a film having good crystallinity at a high film-forming rate.

Film-forming method and raw material solution

A film forming method for forming a film by heating a mist in a film-forming unit, the method including steps of: atomizing a raw-material solution in an atomizer to generate a mist; conveying the mist with a carrier gas from the atomizer to the film-forming unit through a conveyor that connects the atomizer and the film-forming unit; and heating the mist to form a film on a substrate in the film-forming unit. In this method, a flow rate of the carrier gas and a temperature of the carrier gas are controlled to satisfy 7<T+Q<67, where Q represents the flow rate (L/minute) of the carrier gas, and T represents the temperature (° C.) of the carrier gas. Thus, provided is a film forming method excellent in film forming speed.

Film forming method

A solar cell is provided with: a semiconductor substrate having a light-receiving surface and a non-light-receiving surface; a PN junction section formed on the semiconductor substrate; a passivation layer formed on the light-receiving surface and/or the non-light-receiving surface; and power extraction electrodes formed on the light-receiving surface and the non-light-receiving surface. The solar cell is characterized in that the passivation layer includes an aluminum oxide film having a thickness of 40 nm or less. As a result of forming a aluminum oxide film having a predetermined thickness on the surface of the substrate, it is possible to achieve excellent passivation performance and excellent electrical contact between silicon and the electrode by merely firing the conductive paste, which is conventional technology. Furthermore, an annealing step, which has been necessary to achieve the passivation effects of the aluminum oxide film in the past, can be eliminated, thus dramatically reducing costs.

Solar cell, method for manufacturing solar cell, and solar cell module

A laminate including: a crystal substrate; and a semiconductor film provided on a main surface of the crystal substrate, the semiconductor film being mainly made of an oxide semiconductor containing a dopant and having a corundum structure, where the oxide semiconductor has a silicon concentration of 5.0×10cmor less, and the semiconductor film has a resistivity of 150 mΩ·cm or less. This provides a laminate including a semiconductor having low resistance and a corundum structure suitable for use in semiconductor devices.

Laminate, film forming method, and film forming apparatus

A method for manufacturing a solar cell, including the steps of: forming unevenness on both of main surfaces of a semiconductor substrate of a first conductivity type; forming a base layer on a first main surface of the semiconductor substrate; forming a diffusion mask on the base layer; removing the diffusion mask in a pattern; forming an emitter layer on the portion of the first main surface where the diffusion mask have been removed; removing the remaining diffusion mask; forming a dielectric film on the first main surface; forming a base electrode on the base layer; and forming an emitter electrode on the emitter layer. This provides a method for manufacturing a solar cell that can bring high photoelectric conversion efficiency while decreasing the number of steps.

Solar cell with high photoelectric conversion efficiency and method for manufacturing solar cell with high photoelectric conversion efficiency

A backside contact solar cell has, on a first main surface of a crystal silicon substrate, a p-type region having a p-conductive type and an n-type region having an n-conductive type, and a positive electrode formed on the p-type region and a negative electrode formed on the n-type region, wherein the positive electrode includes a laminated conductor of a first electric conductor which is formed on the p-type region and which includes a group III element and a second electric conductor which is laminated on the first electric conductor and which has a lower content ratio of the group III element than the first electric conductor, and the negative electrode includes the second electric conductor formed on the n-type region. In this way, a low-cost backside contact solar cell has a high photoelectric conversion efficiency.

High-efficiency backside contact solar cell and method for manufacturing thereof

A solar cell including: a semiconductor substrate having a first conductivity type; a first conductivity type layer having a conductivity type equal to the first conductivity type and a second conductivity type layer having a second conductivity type opposite to the first conductivity type, which are located on a first main surface of the substrate; a first collecting electrode on the first conductivity type layer located on the first main surface; and a second collecting electrode on the second conductivity type layer located on the first main surface. In the solar cell, a second conductivity type layer having the second conductivity type is formed on a side surface of the semiconductor substrate and continuously from the second conductivity type layer located on the first main surface. Consequently, it is possible to provide a solar cell having excellent conversion efficiency and being capable of efficiently collecting carriers.

Solar cell and method for manufacturing the same

A drying method of a polyimide paste which can maintain a printing shape while maintaining productivity includes an organic solvent and a polyimide resin dissolved in the organic solvent, and which becomes cured polyimide by being cured as a result of being dried and heated, the drying method including a step of applying the polyimide paste to a surface of a base material, a step of applying a solvent including a polar material to a surface of the base material at least at a portion where the polyimide paste is applied, and a step of, after applying the solvent including the polar material, drying the polyimide paste and the solvent including the polar material.

Drying method of polyimide paste and manufacturing method of solar cell having high photoelectric conversion efficiency

An object of the present invention is to provide, at a low cost, a system and a method for manufacturing a solar cell having high conversion efficiency. A solar cell according to the present invention is characterized by including a passivation film that protects a semiconductor substrate, a first finger electrode connected to the semiconductor substrate on a main surface of the semiconductor substrate, a first bus bar electrode that intersects the first finger electrode, and an intermediate layer provided in an intersecting position of the first finger electrode and the first bus bar electrode. The solar cell is characterized in that the first finger electrode and the first bus bar electrode are electrically connected to each other via the intermediate layer.

Solar cell, solar cell manufacturing system, and solar cell manufacturing method

A back surface electrode type solar cell in which a p-type region having a p-conductive type, and an n-type region which has an n-conductive type and in which maximum concentration of additive impurities for providing the n-conductive type in a substrate width direction is equal to or higher than 5&#xd7;10atoms/cmare disposed on a first main surface of a crystal silicon substrate, a first passivation film is disposed so as to cover the p-type region and the n-type region, and a second passivation film is disposed on a second main surface which is a surface opposite to the first main surface so as to cover the second main surface, the first passivation film and the second passivation film being formed with a compound containing oxide aluminum.

Disclosed is a firing furnace for firing an electrode of a solar cell element, which is provided with: a transfer member, which transfers a substrate having a conductive paste applied thereto; a heating section, which heats the substrate and fires the conductive paste; and a cooling section, which cools the heated substrate. The furnace is also provided with a heating means for heating the transfer member. Specifically, at the time of firing the electrode paste using the wire-type firing furnace, since a wire is fired at a temperature substantially equivalent to the ambient temperature of the heating section, deterioration of yield due to having the electrode damaged by a deposited material of the metal component of the conductive paste is suppressed, said deposited material being deposited on the wire, and the wire-type firing furnace can be continuously used.

Firing furnace for firing electrode of solar cell element, method for manufacturing solar cell element, and solar cell element

A solar cell including a semiconductor substrate having a first conductivity type an emitter region, having a second conductivity type opposite to the first conductivity type, on a first main surface of the semiconductor substrate an emitter electrode which is in contact with the emitter region a base region having the first conductivity type a base electrode which is in contact with the base region and an insulator film for preventing an electrical short-circuit between the emitter region and the base region, wherein the insulator film is made of a polyimide, and the insulator film has a CHOdetection count number of 100 or less when the insulator film is irradiated with Biions with an acceleration voltage of 30 kV and an ion current of 0.2 pA by a TOF-SIMS method. The solar cell can have excellent weather resistance and high photoelectric conversion characteristics.

Growing community of inventors

Annaka, Japan

Takenori Watabe