Kabushiki Kaisha Toshiba

Takenori Umeki

Hideo Ishihara

Takashi Ishigami

Kazumi Shimotori

Yoshiharu Ochi

Mituo Kawai

Yasuhisa Oana

Yoshiharu Fukasawa

The present invention is a sputtering target for formation of an alloy film, which comprises 15 to 50 atomic percent of molybdenum or tungsten, the remaining atomic percent of tantalum, and concomitant impurities, which can provide electrical wiring having very low specific resistance as well as excellent workability and stability, whereby high definition and high integration of various elements such as semiconductor devices can be achieved. In consequence, it is fair to say that this invention is industrially very useful.

Sputtering alloy target and method of producing an alloy film

Disclosed is a highly pure titanium which comprises containing not more than 200 ppm of oxygen; not more than 30 ppm each of elements consisting of iron, nickel and chromium, and not more than 0.1 ppm each of elements consisting of sodium and potassium. Disclosed is also a process for preparing the above highly pure titanium which comprises melting a crude titanium obtained by molten salt electrolysis, in a high vacuum of 5.times.10.sup.-5 mbar or less.

Highly pure titanium

Highly pure titanium and process for producing the same

Growing community of inventors

Yokohama, Japan

Takenori Umeki