Sumitomo Chemical Company, Limited

Sumika Epi Solution Company, Ltd.

The University of Tokyo

Takenori Osada

Makoto Kitano

Fumi Yamaguchi

Takanobu Noguchi

Noboru Fukuhara

Toshihiro Ohnishi

Taiki Yamamoto

Takayuki Inoue

Shinichi Takagi

Masahiko Hata

Masato Ueda

Tomoyuki Takada

Tsuyoshi Nakano

Hisashi Yamada

Mitsuru Takenaka

Isao Yahagi

Yasuaki Abe

Manabu Sasaki

Jaehoon Han

Yukio Fujii

A semiconductor wafer is provided, which includes a wafer; a nitride crystal layer formed of one or more crystal layers of group III nitride; and a cap layer; the wafer, the nitride crystal layer and the cap layer are positioned in an order of the wafer, the nitride crystal layer and the cap layer, and the cap layer is a silicon nitride layer having crystallinity and has a thickness of 5 nm or more. Also, a semiconductor wafer is provided, where a layer that is of the nitride crystal layer and that is in contact with the cap layer, and a layer near the layer function as active layers of a field-effect transistor, the cap layer is a silicon nitride layer having crystallinity and a thickness that is equal to or larger than a thickness in which a gate of the field-effect transistor can be embedded.

Electronic device with a gate insulating film and a cap layer of silicon nitride having crystallinity

A semiconductor wafer is provided, which has a silicon wafer, a reaction suppressing layer, a stress generating layer and an active layer, the silicon wafer, the reaction suppressing layer, the stress generating layer and the active layer being disposed in an order of the silicon wafer, the reaction suppressing layer, the stress generating layer and the active layer, where the reaction suppressing layer is a nitride crystal layer that suppresses reaction between silicon atoms and group-III atoms, the stress generating layer is a nitride crystal layer that generates compressive stress, the active layer is a nitride crystal layer in which an electronic device is formed, and the semiconductor wafer further has, between the silicon wafer and the reaction suppressing layer, a SiAlN layer having silicon atoms, aluminum atoms and nitrogen atoms as main constituent atoms.

Semiconductor wafer

There is provided a fabrication technique of a MOS structure that has a small EOT without increasing the interface trap density. More specifically, provided is a method of producing a semiconductor wafer that includes a semiconductor crystal layer, an interlayer made of an oxide, nitride, or oxynitride of a semiconductor crystal constituting the semiconductor crystal layer, and a first insulating layer made of an oxide and in which the semiconductor crystal layer, the interlayer, and the first insulating layer are arranged in the stated order. The method includes (a) forming the first insulating layer on an original semiconductor crystal layer, and (b) exposing a surface of the first insulating layer with a nitrogen plasma to nitride, oxidize, or oxynitride a part of the original semiconductor crystal layer, thereby forming the interlayer, together with the semiconductor crystal layer that is the rest of the original semiconductor crystal layer.

Method of producing semiconductor wafer, semiconductor wafer, method of producing semiconductor device and semiconductor device

In a compound semiconductor epitaxial substrate used for a strain channel high electron mobility field effect transistor which comprises an InGaAs layer as a channel layerand AlGaAs layers containing n-type impurities as electron supplying layersand, the channel layerhas an electron mobility at room temperature of 8300 cm/V&#xb7;s or more by adjusting an In composition of the InGaAs layer composing the channel layerto 0.25 or more and optimizing the In composition and the thickness of the channel layer. GaAs layersandhaving a thickness of 4 nm or more each may be laminated respectively in contact with a top surface and a bottom surface of the channel layer

Compound semiconductor epitaxial substrate and method for manufacturing the same

A compound semiconductor epitaxial substrate including a substrate, and a sub-collector layer, a collector layer, a base layer, an emitter layer and a contact layer(s) formed in this order on the substrate, the compound semiconductor epitaxial substrate having an oxygen-containing layer between the substrate and the sub-collector layer.

Compound semiconductor epitaxial substrate

A compound semiconductor epitaxial substrate for use in a strain channel high electron mobility field effect transistor, comprising an InGaAs layer as a strain channel layerand AlGaAs layers containing n-type impurities as back side and front side electron supplying layersand, wherein an emission peak wavelength from the strain channel layerat 77 K is set to 1030 nm or more by optimizing the In composition and the thickness of the strain channel layer

High electron mobility epitaxial substrate

A hole transporting polymer having a specific Si-containing repeating unit represented by a formula (1) and specific molecular weight, an excellent hole transporting property, and superior durability and film-forming properties, and the organic EL device, using the bole transporting polymer having excellent light emitting characteristics are disclosed.

Hole transporting polymer and organic electroluminescence device using the same

A polysilane is disclosed whose main chain skeleton has a repeating unit represented by the general formula (1): ##STR1## wherein R.sub.1 represents a substituted or unsubstituted alkyl cycloalkyl, aryl or aralkyl group; X is a atom having an unpaired electron or a group containing an atom having an unpaired electron and represents an oxygen atom, sulfer atom or a nitrogen atom-containing group represented by the general formula (2): ##STR2## wherein R.sub.2 represents a substituted or unsubstituted alkyl, cycloalkyl, aryl or aralkyl group; Ar.sub.1 represents a substituted or unsubstituted arylene group; and Ar.sub.2 represents a substituted or unsubstituted aryl group, a group having an aromatic amine skeleton or a group ethenylene skeleton; a process for producing the polysilane; and a dihalosilane which is the starting material therefor. The polysilane compound has an excellent moldability as a high polymeric material and a higher hole drift mobility as a hole transporting material.

Growing community of inventors

Ichihara, Japan

Takenori Osada