Hoya Corporation

Wd Media (singapore) Pte. Ltd.

Takenori Kajiwara

Osamu Nozawa

Hiroaki Shishido

Tokichiro Sato

Takahiro Onoue

Ryo Ohkubo

Teiichiro Umezawa

Kazuaki Sakamoto

Chiyo Saito

A mask blank having fast repair rate of EB defect repair and high repair rate ratio to EB defect repair relative to a transparent substrate that includes a phase shift film on a transparent substrate, the phase shift film has a structure including three sets or more of a set of a stacked structure including a high transmitting layer and a low transmitting layer, the high transmitting layer and the low transmitting layer are made of a material consisting of silicon and nitrogen, or a material consisting of silicon, nitrogen, oxygen, and one or more elements selected from a metalloid element and a non-metallic element, the high transmitting layer includes 50 atom % or more nitrogen content and has a thickness of 12 nm or less, and the low transmitting layer includes less than 50 atom % nitrogen content and has a thickness less than the high transmitting layer.

Mask blank, phase shift mask, method for manufacturing phase shift mask, and method for manufacturing semiconductor device

A mask blank having a phase shift film and a light shielding film laminated on a transparent substrate. The phase shift film transmits ArF exposure light at a transmittance of from 2% to 30% and generates a phase difference of from 150&#xb0; to 200&#xb0;, is formed from a material containing Si and not substantially containing Cr, and has a lower layer (L) and an upper layer (U) laminated from the transparent substrate side. A refractive index n for layer L is below that of the substrate while n for layer U is higher, and layer L has an extinction coefficient k higher than that of layer U. The light shielding film includes a layer in contact with the phase shift film that is formed from a material containing Cr, has a n lower than that of layer U, and has an extinction coefficient k higher than that of layer U.

Mask blank, phase shift mask, and method for manufacturing semiconductor device

An object is to provide a mask blank for manufacturing a phase shift mask in which a thermal expansion of a phase shift pattern, which is caused when exposure light is radiated onto the phase shift pattern, and displacement of the phase shift pattern are suppressed to be small. A phase shift film has a function of transmitting exposure light from an ArF excimer laser at a transmittance of 2% or higher and 30% or lower and a function of generating a phase difference of 150&#xb0; or larger and 180&#xb0; or smaller between the exposure light that has been transmitted through the phase shift film and the exposure light that has passed through air by a distance equal to a thickness of the phase shift film. The phase shift film is formed of a material containing a metal and silicon, and has a structure in which a lower layer and an upper layer are laminated in the stated order from a transparent substrate side. The lower layer has a refractive index n at a wavelength of the exposure light that is smaller than that of the transparent substrate. The upper layer has a refractive index n at the wavelength of the exposure light that is larger than that of the transparent substrate. The lower layer has an extinction coefficient k at the wavelength of the exposure light that is larger than that of the upper layer. The upper layer has a thickness that is larger than that of the lower layer.

Mask blank, phase shift mask, phase shift mask manufacturing method, and semiconductor device manufacturing method

Provided is a mask blank with a phase shift film having a function to transmit ArF exposure light at a predetermined transmittance and a function to generate a predetermined phase difference to the transmitting ArF exposure light, and having high ArF light fastness. The phase shift film has a function to transmit ArF exposure light at 2% or more transmittance and a function to generate a phase difference of 150 degrees or more and 180 degrees or less to the transmitting ArF exposure light; a lower layer and an upper layer are stacked from a substrate side; the lower layer is formed from silicon or silicon containing one or more elements selected from nonmetallic elements other than oxygen and semimetal elements; the upper layer other than a surface layer is formed from silicon and nitrogen or a material consisting of silicon, nitrogen and one or more elements selected from nonmetallic elements excluding oxygen and semimetal elements; the lower layer has refractive index n of less than 1.8 and extinction coefficient k of 2.0 or more; the upper layer has refractive index n of 2.3 or more and extinction coefficient k of 1.0 or less; and the upper layer has more thickness than the lower layer.

A mask blank with phase shift film where changes in transmittance and phase shift to an exposure light of an ArF excimer laser are suppressed. The film transmits light of an ArF excimer laser at a transmittance of 2% or more and less than 10% and generates a phase difference of 150 degrees or more and 190 degrees or less between the exposure light transmitted through the phase shift film and the exposure light transmitted through the air for the same distance as a thickness of the phase shift film. The film has a stacked lower layer and upper layer, the lower layer containing metal and silicon and substantially free of oxygen. The upper layer containing metal, silicon, nitrogen, and oxygen. The lower layer is thinner than the upper layer, and the ratio of metal to metal and silicon of the upper layer is less than the lower layer.

A mask blank with a phase shift film and a light shielding film, laminated on a transparent substrate. The phase shift film transmits ArF exposure light at a transmittance (&#x3c4;) 2%&#x2265;&#x3c4;&#x2264;30% and generates a phase difference (&#x394;&#x3d5;) of 150&#xb0;&#x2265;&#x394;&#x3d5;&#x2264;200&#xb0;, and is formed from a material containing Si and not substantially containing Cr, and has a lower layer (L) and an upper layer (U) laminated from the transparent substrate side. A refractive index n for layer L is below the transparent substrate while n for layer U is higher, and the layer L has an extinction coefficient k higher than layer U. The light shielding film includes a layer in contact with the phase shift film that is formed from a material containing Cr, has a n lower than layer U, and has an extinction coefficient k higher than layer U.

A mask blank comprising an etching stopper film. The mask blank comprises a thin film for pattern formation on a main surface of a transparent substrate, and is featured in that: the thin film for pattern formation contains silicon, an etching stopper film is provided between the transparent substrate and the thin film for pattern formation, and the etching stopper film contains silicon, aluminum, and oxygen.

Mask blank, transfer mask, method of manufacturing transfer mask and method of manufacturing semiconductor device

A method of manufacturing a perpendicular magnetic disk comprises forming, on a base, a film of a first ground layer made of Ru or a Ru alloy at a first pressure, forming, on the first ground layer, a film of a second ground layer made of Ru or a Ru alloy at a second pressure higher than a first pressure, forming, on the second ground layer, a film of a third ground layer having Ru or a Ru alloy as a main component and an oxide as an accessory component at a third pressure higher than the first pressure and lower than the second pressure, and forming, on a layer above the third ground layer, a film of a granular magnetic layer in which a non-magnetic substance having an oxide is segregated around magnetic particles having an CoCrPt alloy grown in a columnar shape to form a grain boundary.

Method of manufacturing a perpendicular magnetic disc

A perpendicular magnetic disk is provided. The disk includes, on a base and in the order from bottom, a first granular magnetic layer group including a plurality of magnetic layers each having a granular structure, a non-magnetic layer having Ru or a Ru alloy as a main component, a second granular magnetic layer group including a plurality of magnetic layers each having the granular structure, and an auxiliary recording layer having a CoCrPtRu alloy as a main component. Layers closer to a front surface among the plurality of magnetic layers included in the first granular magnetic layer group having an equal or smaller content of Pt. Layers closer to the front surface among the plurality of magnetic layers included in the second granular magnetic layer group having an equal or smaller content of Pt and having an equal or larger content of an oxide.

Perpendicular magnetic recording disc

A perpendicular magnetic recording medium comprises a magnetic recording layer that records a signal, an underlayer formed of Ru or Ru compound below the magnetic recording layer, a non-magnetic layer formed of a non-magnetic material below the underlayer to control crystal orientation of the underlayer, a soft magnetic layer provided below the non-magnetic layer, and a substrate on which the magnetic recording layer, the underlayer, the non-magnetic layer, and the soft magnetic layer are formed. The non-magnetic layer comprises a first non-magnetic layer formed above the soft magnetic layer and a second non-magnetic layer formed above the first non-magnetic layer. The first non-magnetic layer is formed of amorphous Ni compound while the second non-magnetic layer is formed of crystalline Ni or crystalline Ni compound.

Perpendicular magnetic recording medium and method of manufacturing the same

Provided are a magnetic disk comprising a granular magnetic recording layer which causes less noise even with a recording capacity thereof of 250 G or more bits per square inch; and a method for manufacturing the same. The magnetic disk according to the present invention comprises: a granular magnetic recording layer () which is formed on a disk substratedirectly or via an intermediate layer and which has non-magnetic regions between granular columnar particles; and an auxiliary recording layer () which is formed on the granular magnetic recording layerand which causes exchange interaction among the granular columnar particles, wherein the auxiliary recording layer () contains 0.1 to 3 moles of oxygen.

Magnetic disk and method for manufacturing same

A perpendicular magnetic disk that includes, on a base, a soft magnetic layer, an amorphous alloy layer, a preliminary ground layer provided on the amorphous alloy layer, a ground layer formed of Ru or a Ru-type alloy having an hcp crystal structure provided on the preliminary ground layer. A granular magnetic layer is provided on the ground layer. The amorphous alloy layer contains Ta, and the preliminary ground layer includes a first preliminary ground layer formed of Ti or a Ti alloy of microcrystals and a second preliminary ground layer formed of a Ni-type alloy of an fcc crystal structure.

Perpendicular magnetic disc

[Problem] An object is to make a film thinner while keeping the function as an auxiliary recording layer and increase an SNR. [Solution] A structure of the perpendicular magnetic diskaccording to the present invention includes, on a base, a granular magnetic layerand an auxiliary recording layerdisposed above the granular magnetic layer, the granular magnetic layer having a granular structure in which a non-magnetic substance having an oxide as a main component is segregated around magnetic particles having a CoCrPt alloy as a main ingredient growing in a columnar shape to form a grain boundary part, and the auxiliary recording layer having a CoCrPtRu alloy as a main component and further containing, as a accessory component, a metal forming passivity and not being an antiferromagnet.

Growing community of inventors

Tokyo, Japan

Takenori Kajiwara