Sanyo Electric Co., Ltd.

Takenori Goto

Akira Ibaraki

Nobuhiko Hayashi

Kazushi Mori

Daisuke Ide

Atsushi Tajiri

Yasuaki Inoue

Minoru Sawada

Koutarou Furusawa

Masayuki Shono

Mitsuaki Matsumoto

Keiichi Yodoshi

Teruaki Miyake

Kenichi Matsukawa

Yasuhiko Nomura

Yasuyuki Bessho

Tatsuya Kunisato

Shoji Honda

Toru Ishikawa

Takatoshi Ikegami

Atushi Tajiri

Masayuki Hata

Saburo Nakashima

Yasunori Inoue

Yoshio Okayama

Takashi Kano

Naoteru Matsubara

Tsutomu Yamaguchi

Kiyoshi Oota

Shingo Kameyama

Seiichi Tokunaga

Yuuki Ota

Tomoyuki Yoshie

A semiconductor laser device includes a Si(100) substrate in which a recess having an opening and a bottom face surrounded by inner wall surfaces is formed, a semiconductor laser element placed on the bottom face, and a translucent sealing glass, mounted on top of the Si(100) substrate, which seals the opening. The laser light emitted from the semiconductor laser element is reflected by a metallic reflective film formed on the inner wall surface and then transmits through the sealing glass so as to be emitted externally.

Semiconductor laser device, optical pickup device and semiconductor device

A semiconductor laser diode apparatus capable of suppressing variation in an emission position and an emission direction of a laser beam emitted from a semiconductor laser diode element is obtained. This semiconductor laser diode apparatus includes a semiconductor laser diode element having warping along either a first direction in which a cavity extends or a second direction intersecting with the first direction and a base on which a convex side of the warping of the semiconductor laser diode element is fixed, wherein a distance between a first end of the semiconductor laser diode element in a direction of larger warping among the first and second directions and the base is smaller than a distance between a second end of the semiconductor laser diode element in the direction of the large warping among the first and second directions and the base.

Semiconductor laser diode apparatus and method of fabricating the same

Illumination device has a plurality of light emitting units, each with light emitting element and first fluorescent material region provided at a light emitting side of the light emitting element. A plurality of second fluorescent material regions are provided at the light emitting sides of respective light emitting units. Second fluorescent material regions having the same emission conversion property are respectively provided at the light emitting side of at least one light emitting unit having the same emission property among the plurality of light emitting units.

Illumination device and manufacturing method thereof

A light emitting device includes a light emitting element mounted on a base; a phosphor-containing transparent resin section which contains a phosphor for absorbing light emitted from the light emitting element and for emitting light having a wavelength different from that of the absorbed light, and which is filled in the base while containing the light emitting element mounted on the base and with the light emitting element covered therewith; and a high-concentration phosphor-containing resin layers, which is formed on a section directly above the light emitting element, and which has a phosphor concentration higher than that of the phosphor-containing transparent resin.

Light emitting device and method for manufacturing the same

A semiconductor light emitting element includes a semiconductor layer which has an electrode on at least one principal surface and a supporting substrate which is bonded with the electrode by a conductive adhesive. One of the semiconductor layer and the supporting substrate includes a protruded surface protruding in one portion on the principal surface, the other includes a junction surface which opposes the protruded surface, the junction surface is bonded with the protruded surface with the electrode and the conductive adhesive interposed between the protruded surface and the junction surface, and the junction surface is larger in area than a region to be bonded with the protruded surface.

Semiconductor light emitting element and semiconductor light emitting device

In a semiconductor laser device, an AlGaN buffer layer, a GaN layer, an n-GaN layer, an n-AlGaN cladding layer, an MQW light emitting layer, a p-AlGaN cladding layer, a p-first GaN cap layer, a current blocking layer composed of n-AlGaN, and a p-second GaN cap layer are stacked in this order on a sapphire substrate, and a ridge portion having an upper surface having a width Wis formed by etching. The current blocking layer has an opening having a width Won the upper surface of the ridge portion. The width Wof the opening is smaller than the width Wof the upper surface of the ridge portion. Accordingly, in a light emitting region of the MQW light emitting layer, a saturable light absorbing region is formed on both sides of a current injection region.

Semiconductor laser device and method of fabricating the same

A semiconductor laser device is constructed by stacking a buffer layer, an undoped GaN layer, an n-GaN contact layer, an n-InGaN crack preventing layer, an n-AlGaN cladding layer, a light emitting layer, a p-AlGaN cladding layer, and a p-GaN contact layer in this order. A ridge portion comprising the p-GaN contact layer and the p-AlGaN cladding layer is formed, and the thickness of the p-AlGaN cladding layer in the ridge portion is less than 0.3 &#x3bc;m.

Nitride based semiconductor light emitting device and nitride based semiconductor laser device

An n-contact layer, an n-cladding layer, an MQW active layer, and a p-first cladding layer are formed in this order on a sapphire substrate. An n-current blocking layer having a striped opening is formed on the p-first cladding layer. The width of the striped opening gradually increases from Wto Was the depth thereof decreases from a lower layer to an upper layer in the current blocking layer. A p-second cladding layer is formed on the n-current blocking layer and on the p-first cladding layer inside the striped opening. The p-second cladding layer comprises a lower layer having the width Wat its lower end and an upper layer having a width Wlager than the width W

A semiconductor laser device is constructed by stacking an n-cladding layer, an n-optical guide layer, an MQW active layer, a p-cap layer, a p-optical guide layer, a p-cladding layer, an n-current blocking layer, and a p-contact layer in this order on one surface of a transparent substrate. A p electrode is formed on a predetermined region of the p-contact layer. An n electrode having a projected shape is formed on the other surface of the transparent substrate. In this case, a portion, where a projection of the n electrode is arranged, of the device corresponds to the front (a surface on the side of laser light emission) thereof.

Nitride based semiconductor laser device and method of fabricating the same

A highly reliable semiconductor laser device having a low operating voltage is obtained by increasing adhesive force of the overall electrode layer to a nitride-based semiconductor layer without deteriorating a low contact property. This nitride-based semiconductor laser device comprises a nitride-based semiconductor layer formed on an active layer and an electrode layer formed on the nitride-based semiconductor layer, while the electrode layer includes a first electrode layer containing a material having strong adhesive force to the nitride-based semiconductor layer and a second electrode layer, formed on the first electrode layer, having weaker adhesive force to the nitride-based semiconductor layer than the first electrode layer for reducing contact resistance of the electrode layer with respect to the nitride-based semiconductor layer. Thus, the adhesive force of the overall electrode layer to the nitride-based semiconductor layer is increased due to the first electrode layer, and lower contact resistance is attained due to the second electrode layer. Therefore, the device can be improved in reliability and reduced in operating voltage.

Nitride-based semiconductor laser device and method of forming the same

In a semiconductor laser device, a buffer layer, an n-contact layer, an n-light cladding layer, an n-light guide layer, an emission layer, a p-cap layer, a p-light guide layer and an n-current blocking layer having a striped opening are successively formed on a sapphire substrate, and a p-light cladding layer is formed in the opening. A p-contact layer is formed on the p-light cladding layer and on the n-current blocking layer. The n-current blocking layer is made of n-Al Ga N and has an electron concentration of 1&times;10 cm and an Al composition greater than 0.1, and the surface thereof is terminated with N.

Semiconductor light emitting device

A nitride semiconductor device of the self-pulsation type comprises as superposed on a substrate an n-type cladding layer , active layer and p-type cladding layer including an upwardly projecting stripe portion , an n-type current blocking layer being formed at each of opposite sides of the stripe portion . The stripe portion of the p-type cladding layer comprises an upper stripe portion and a lower stripe portion . The upper stripe portion has a minimum width W at the position of the boundary between the upper and lower stripe portions , and the lower stripe portion has at the position of its lower end a width W greater than the minimum width W of the upper stripe portion . This construction realizes a higher yield than in the prior art.

Nitride semiconductor laser device

A grating surface of a diffraction grating diffracts a laser beam emitted from a semiconductor laser device in &plusmn;1st order directions. The grating surface is formed in a rectangular or elliptic shape in such dimensions that a light spot formed on an objective lens by &plusmn;1st order diffracted beams is located in an aperture of the objective lens and not displaced from the aperture even if the objective lens is horizontally moved in a tracking operation. A grating surface of another diffraction grating has a width smaller than the width of an overlap region of a light spot on the diffraction grating corresponding to a part of a beam, diffracted in the &plusmn;1st direction, entering an objective lens and a light spot on the diffraction grating corresponding to a part of a beam, diffracted in the &minus;1st direction, entering the objective lens.

Optical pickup apparatus employing an adjusting circuit

A grating surface of a diffraction grating diffracts a laser beam emitted from a semiconductor laser device in &plusmn;1st order directions. The grating surface is formed in a rectangular or elliptic shape in such dimensions that a light spot formed on an objective lens by &plusmn;1st order diffracted beams is located in an aperture of the objective lens and not displaced from the aperture even if the objective lens is horizontally moved in a tracking operation. A grating surface of another diffraction grating has a width smaller than the width of an overlap region of a light spot on the diffraction grating corresponding to a part of a beam, diffracted in the &plus;1st direction, entering an objective lens and a light spot on the diffraction grating corresponding to a part of a beam, diffracted in the &minus;1st direction, entering the objective lens.

Optical pickup apparatus capable of suppressing offset of a tracking error signal

First and second photodiodes are arranged on the upper surface of a stem, returned light beams diffracted in the &plus; 1st order by a transmission type holographic optical element are received by the first photodiode, while returned light beams diffracted in the &minus; 1st order are received by the second photodiode. The first photodiode has a plurality of light receiving regions, and respectively outputs a reproducing signal, a focus error signal and a tracking error signal on the basis of the returned light beams. On the other hand, the second photodiode has a single light receiving region, and outputs a reproducing signal on the basis of the returned light beams.

Optical pickup apparatus and optical recording medium drive employing the same including a first photo receiving element for detecting the state of light beam and a second photo receiving element for reproducing information

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Moriguchi, Japan

Takenori Goto