Toray Industries, Inc.

Takenori Fujiwara

Yugo Tanigaki

Shinji Arimoto

Mitsuhito Suwa

Masao Tomikawa

Seiichiro Murase

Jun Tsukamoto

Hirokazu Iimori

Yukari Jo

Toru Okazawa

Yusuke Fukuzaki

Masahide Senoo

Ichiro Masuda

A resin composition contains at least (a) a polyimide resin having a specific structure and (b) a crosslinker including a fluorene group. The resin composition is capable of bonding an electronic circuit formation substrate or a semiconductor circuit formation substrate and a support substrate together. The resin composition has excellent heat resistance during bonding of an electronic circuit formation substrate or semiconductor circuit formation substrate having a thickness of 1 &#x3bc;m or more and 100 &#x3bc;m or less. The resin composition has steady adhesive force through the process of manufacturing an electronic component, a semiconductor device or the like, and can be peeled off under mild conditions at room temperature after the manufacturing process. An adhesive, a resin layer, a laminated film, and a processed wafer containing the resin composition, as well as a method for manufacturing an electronic component or a semiconductor device using these are also disclosed.

Resin composition, resin layer, permanent adhesive, adhesive for temporary bonding, laminated film, processed wafer, and method for manufacturing electronic component or semiconductor device

The present invention provides a temporary-bonding adhesive having excellent heat resistance, whereby a semiconductor circuit formation substrate and a support substrate can be bonded by a single type of adhesive layer, the adhesive force thereof does not change over the course of steps for manufacturing a semiconductor device or the like, and the adhesive can subsequently be easily de-bonded at room temperature under mild conditions; and a method for manufacturing a semiconductor device using the temporary-bonding adhesive. The present invention includes a temporary-bonding adhesive wherein a polyimide copolymer having at least an acid dianhydride residue and a diamine residue, the diamine residue including both of (A1) a polysiloxane-based diamine residue represented by a general formula (1) in which n is a natural number from 1 to 15, and (B1) a polysiloxane-based diamine residue represented by a general formula (1) in which n is a natural number from 16 to 100, the polyimide copolymer containing 40-99.99 mol % of the (A1) residue and 0.01-60 mol % of the (B1) residue.

Adhesive for temporary bonding, adhesive layer, wafer work piece and method for manufacturing semiconductor device using same, rework solvent, polyimide copolymer, polyimide mixed resin, and resin compostion

Provided is a resin composition including: (A1) an alkali-soluble resin having a specific structural unit; (A2) at least one resin selected from the group consisting of polyimides, polybenzoxazoles, polyamideimides, precursors thereof, and copolymers thereof, the resin having a substituent that reacts with a reactive group of the alkali-soluble resin; and (B) a photosensitizer, in which the amount of the resin (A2) is 310 to 2,000 parts by weight with respect to 100 parts by weight of the resin (A1).

Resin composition, method for manufacturing semiconductor element using the same, and semiconductor device

To provide a photosensitive resin composition which is capable of forming a pattern with high resolution and obtaining a cured film having excellent heat resistance and cracking resistance, and is also alkali developable; and a method capable of shortening the step required to remove a cured film of the composition after formation of an impurity region on a semiconductor substrate; and a method for manufacturing a semiconductor device using the same. Disclosed is a photosensitive resin composition including a polysiloxane (A).

Photosensitive resin composition, cured film, element provided with cured film, and method for manufacturing semiconductor device

Adhesive for temporary bonding, adhesive layer, wafer work piece and method for manufacturing semiconductor device using same, rework solvent, polyimide copolymer, polyimide mixed resin, and resin composition

Disclosed is a photosensitive resin composition which exhibits positive or negative photosensitivity and is used as a mask in an ion implantation step, the photosensitive resin composition including, as a resin, (A) a polysiloxane. The photosensitive resin composition of the present invention has high heat resistance and is capable of controlling a pattern shape, and also has excellent ion implantation mask performance, thus enabling application to a low-cost high-temperature ion implantation process.

Photosensitive resin composition and method for producing semiconductor device

The present invention provides a photosensitive resin composition comprising an unsaturated group-containing resin (D), a (meth)acrylic compound (E) having a specific structure, a silane compound (G) having a substituent selected from the group consisting of an amino group, an amide group, a ureido group, a ketimine group, and an isocyanate group, and a photo-polymerization initiator (F), the unsaturated group-containing resin (D) being obtained by adding an epoxy group-containing unsaturated compound (C) to some acid radicals of a copolymer obtained by copolymerizing a (meth)acrylic ester (A) with an unsaturated group- and acid-containing compound (B).

Photosensitive resin composition, conductive wire protection film, and touch panel member

To provide a gate insulating material which has high chemical resistance, is superior in coatability of a resist and an organic semiconductor coating liquid, and has small hysteresis, a gate insulating film and an FET using the same by a polysiloxane having an epoxy group-containing silane compound as a copolymerization component. A gate insulating material containing a polysiloxane having, as copolymerization components, at least a silane compound represented by the general formula (1):RSi(OR)&#x2003;&#x2003;(1),

Gate insulating material, gate insulating film and organic field-effect transistor

A positive photosensitive siloxane composition having high photosensitivity and having such properties as high heat resistance, high transparency and low dielectric constant may be used to form a planarization film for a TFT substrate, an interlayer dielectrics or a core or cladding of an optical waveguide. The positive photosensitive siloxane composition includes a siloxane polymer, quinonediazide compound and solvent, and a cured film formed of the composition has a light transmittance per 3 &#x3bc;m of film thickness at a wavelength of 400 nm of 95% or more.

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Otsu, Japan

Takenori Fujiwara