Tokyo Electron Limited

Zeon Corporation

Tohoku University

Takenao Nemoto

Takehisa Saito

Peter Ventzek

Hirokazu Matsumoto

Akinobu Teramoto

Hirokazu Ueda

Gert J Leusink

Emmanuel P Guidotti

Koji Yamagishi

Yuuki Kobayashi

Hiroshi Kaneko

Masahiro Horigome

Xun Gu

Yugo Tomita

Akihide Shirotori

Yasuhiko Saito

A method includes performing an etching process in a first process module, moving a workpiece formed by the etching process from the first process module to a second process module, and performing a film forming process on the workpiece in the second process module. In the performing the film forming process, an insulating film is formed on a first surface and a second surface of a laminated portion by plasma of a processing gas that contains hydrogen. In the performing the film forming process, an internal pressure of the second process module is 200 mTorr or more, and a hydrogen partial pressure of the second process module is 15 mTorr or less. The performing the etching process, the moving the workpiece, and the performing the film forming process are consistently performed in a state where oxygen is exhausted.

Method of processing workpiece

A plasma processing apparatus for alternately performing a first plasma processing step using first and second processing gases and a second plasma processing step using third and fourth processing gases. The apparatus includes: a processing container that has a dielectric window in a ceiling and removably accommodates a workpiece; an exhaust unit that evacuates the processing container; a processing gas supply unit that supplies the first, second, third, and fourth processing gases into the processing container; a first gas introduction unit including a top plate gas injection port, a dielectric window gas flow path, and a first external gas flow path; a second gas introduction unit including a sidewall gas injection port, a sidewall gas flow path, and a second external gas flow path; an electromagnetic wave supply unit that supplies electromagnetic waves into the plasma generating space; a bypass exhaust path; and an opening/closing valve.

Plasma processing apparatus and film formation method

Provided are a semiconductor device and semiconductor-device manufacturing method that make it possible to improve the contact between an insulating film and a wiring member and the reliability thereof. This method for manufacturing a semiconductor device () includes a step in which a CF film () is formed on top of a semiconductor substrate (), a step in which grooves (C) corresponding to a wiring pattern (P) are formed in the CF film (), and a step in which a copper wiring member () is embedded in the grooves (C).

Wiring structure having interlayer insulating film and wiring line without a barrier layer between

A method and apparatus for doping a surface of a substrate with a dopant, with the dopant being for example phosphine or arsine. The doping is performed with a plasma formed primarily of an inert gas such as helium or argon, with a low concentration of the dopant. To provide conformal doping, preferably to form a monolayer of the dopant, the gas flow introduction location is switched during the doping process, with the gas mixture primarily introduced through a center top port in the process chamber during a first period of time followed by introduction of the gas mixture primarily through peripheral or edge injection ports for a second period of time, with the switching continuing in an alternating fashion as the plasma process.

Pulsed gas plasma doping method and apparatus

A cleaning method is provided using a cleaning gas mixture of hydrogen and inert gas, for example a mixture in which the hydrogen content is between 20 percent and 80 percent by volume, provided to the chamber of a semiconductor wafer processing apparatus and an ICP power source only to generate a high density plasma in the gas mixture without biasing the surface to be cleaned. In examples of the invention, Si and SiOcontaminants or CFx contaminants are cleaned from a silicon contact prior to subsequent metal deposition. In another example of the invention, silicon residue is cleaned from internal chamber surfaces before oxide etching to recover the baseline oxide etch rate.

Method and apparatus for removing material from chamber and wafer surfaces by high temperature hydrogen-containing plasma

Growing community of inventors

Miyagi, Japan

Takenao Nemoto