Nippon Telegraph and Telephone Corporation

Takemi Ueki

Shinji Nakamura

Tadao Takeda

Toshiaki Tsuchiya

Terukazu Ohno

Sadao Nakashima

Tetsushi Sakai

Yuichi Kado

A method of manufacturing an SOI substrate uses an SOI substrate having a first single-crystal silicon layer, an insulating layer formed on the first single-crystal silicon layer, and a second single-crystal silicon layer formed on the insulating layer. The surface of the second single-crystal silicon layer is thermally oxidized. The second single-crystal silicon layer is controlled to have a predetermined thickness by removing the thermally oxidized surface. This step controlling the second single-crystal silicon layer to have a predetermined thickness includes the step of eliminating, by annealing, a stacking fault formed by the thermal oxidation.

Method of manufacturing SOI substrate

Growing community of inventors

Kanagawa, Japan

Takemi Ueki