Mitsubishi Denki Kabushiki Kaisha

Takemi Endoh

Shigeru Harada

Tomohiro Ishida

Hiroshi Adachi

Etsushi Adachi

Hirozoh Kanegae

Kimio Hagi

Hiroshi Mochizuki

Kazuhito Matsukawa

Masanori Obata

Akira Ohhisa

A semiconductor device has a conductive interconnection layer formed on a semiconductor substrate covered with a protection insulation film. A pad electrode opening is provided in the protection insulation film so that the surface of the conductive interconnection layer is exposed in the region which becomes the pad electrode. The conductive interconnection layer is electrically connected to an external terminal by a bonding wire. At least the surface of the protection insulation film in the proximity of the pad electrode opening and the inner peripheral side face of the pad electrode opening are covered with an elastic insulation film. The pad electrode opening is covered with the bonding wire. Since the conductive interconnection layer is not exposed at the pad electrode opening according to this structure, the phenomenon of moisture intruding into the pad electrode opening to corrode the conductive interconnection layer is prevented to improve reliability. The semiconductor device of this structure is formed by covering the inner surface and its proximity of the pad electrode opening with an elastic insulation film, forming an opening in the elastic insulation film at the bottom of the pad electrode opening, and connecting the pad electrode to an external terminal by wire bonding.

Semiconductor device and method of manufacturing thereof

Semiconductor device with bonding pad electrode

The present invention is mainly characterized by providing an even surface of an interlayer insulating film for insulating and isolating an upper interconnection and a lower interconnection from each other. A lower interconnection layer is provided on a semiconductor substrate, having a pattern of stepped portions. A silicon type insulating film is provided on the semiconductor substrate so as to cover the lower interconnection layer. A silicon ladder resin film is filled in recessed portions of the surface of the silicon type insulating film for making even the surface of the silicon type insulating film. An upper interconnection layer electrically connected to the lower interconnection layer through a via hole is provided on the silicon type insulating film. The silicon ladder resin film has the structural formula: ##STR1## where R.sub.1 is at least one of a phenyl group and a lower alkyl group, R.sub.2 is at least one of a hydrogen atom and a lower alkyl group, and n is an integer of 20 to 1000.

Semiconductor device and manufacturing method thereof

Growing community of inventors

Hyogo, Japan

Takemi Endoh