Tamura Corporation

Koha Co., Ltd.

Takekazu Masui

Shinya Watanabe

Kimiyoshi Koshi

Kazuyuki Iizuka

Masaru Takizawa

Yu Yamaoka

Makoto Watanabe

Daiki Wakimoto

Kei Doioka

Haruka Matsubara

Kazuyuki IIzuka

Provided is a method for growing a &#x3b2;-GaO-based single crystal, whereby it becomes possible to grow a &#x3b2;-GaO-based single crystal having a small variation in crystal structure and also having a high quality in the direction of a b axis. In one embodiment, a method for growing a &#x3b2;-GaO-based single crystal includes growing a plate-shaped Sn doped &#x3b2;-GaO-based single crystal in the direction of the b axis using a seed crystal.

Method for growing &#x3b2;-GAO-based single crystal

A &#x3b2;-GaO-based single-crystal substrate includes a &#x3b2;-GaO-based single crystal, and a principal surface being a plane parallel to a b-axis of the &#x3b2;-GaO-based single crystal. A maximum value of &#x394;&#x3c9; on an arbitrary straight line on the principal surface that passes through a center of the principal surface is not more than 0.7264. The &#x394;&#x3c9; is a difference between a maximum value and a minimum value of values obtained by subtracting &#x3c9;from &#x3c9;at each of measurement positions, where &#x3c9;represents an angle defined by an X-ray incident direction and the principal surface at a peak position of an X-ray rocking curve on the straight line and &#x3c9;represents an angle on an approximated straight line obtained by using least-squares method to linearly approximate a curve representing a relationship between the &#x3c9;and the measurement positions thereof.

&#x3b2;-Ga2O3 single-crystal substrate

A method for growing a &#x3b2;-GaO-based single crystal, can provide a plate-shaped &#x3b2;-GaO-based single crystal having high crystal quality. In one embodiment, a method for growing a &#x3b2;-GaO-based single crystal employing an EFG method is provided, the method including: bringing a plate-shaped seed crystal into contact with a GaO-based melt, wherein the plate-shaped seed crystal includes a &#x3b2;-GaO-based single crystal having a defect density of not more than 5&#xd7;10/cmin the whole region; and pulling up the seed crystal to grow a &#x3b2;-GaO-based single crystal.

Method for growing B-Ga2O3-based single crystal

Provided are: a method for producing a &#x3b2;-GaOsubstrate of which changes in donor concentration in a reducing atmosphere or an inert gas atmosphere are suppressed; and a method for producing a crystal laminate structure that can epitaxially grow a high-quality crystal film having low variability of quality in a reducing atmosphere or an inert gas atmosphere. The method for producing a &#x3b2;-GaOsubstrate includes a step for cutting out a &#x3b2;-GaOsubstrate from a &#x3b2;-GaOcrystal containing a group IV element; annealing processing in an atmosphere containing a reducing atmosphere and/or an inert gas atmosphere is performed on the &#x3b2;-GaOcrystal before cutting out the &#x3b2;-GaOsubstrate, or on the cut-out &#x3b2;-GaOsubstrate.

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Provided is one embodiment which is a method for growing a &#x3b2;-GaO-based single crystal which uses the EFG method and includes raising a GaOmelt inside a crucible up to a die opening via a die slit such that a seed crystal is contacted with the GaO-based melt in the opening of the die with a horizontal position of the seed crystal shifted in a width direction (W) from a center in the width direction (W) of the die, and pulling up the seed crystal contacting the GaO-based melt so as to grown a &#x3b2;-GaOsingle crystal.

A &#x3b2;-GaO-based single crystal substrate includes an average dislocation density of less than 7.31&#xd7;10cm. The average dislocation density may be not more than 6.14&#xd7;10cm. The substrate may further include a main surface including a plane orientation of (&#x2212;201), (101) or (001). The substrate may be free from any twinned crystal.

Growing community of inventors

Tokyo, Japan

Takekazu Masui