Mitsubishi Denki Kabushiki Kaisha

Takeji Fujiwara

Hisao Kondo

Aiichiro Nara

Hideaki Ikegawa

Hiroyuki Sato

Fumiaki Baba

Takamitsu Fujimoto

Satoshi Yanaura

Atsuko Noda

The improved moistureproof structure for a module circuit is characterized in that a porous film conditioned to have an apparent relative dielectric constant of no more than 2.0 is coated over a stripline a high-frequency circuit, or a high-frequency device formed on a substrate, which porous film may in turn be provided with a resin coating material. The structure insures that the module circuit is moistureproof, thereby protecting it against corrosion to improve its operational reliability without affecting its electrical characteristics.

Moistureproof structure for module circuits

Semiconductor substrates electroplated with nickel-palladium alloy consisting of above 50 to 80 atomic percent nickel and below 50 to 20 atomic percent palladium exhibit excellent thermal stability.

Process for forming electrode on semiconductor device

A Schottky barrier semiconductor device comprising a semiconductor substrate having a hole in part of one of its main surfaces, a surface protecting film formed on the main surface and having a flange-like part extending over the edge of the hole, and a barrier metal formed on the entire wall of the hole including areas underneath the flange-like portion. The barrier metal film thus formed prevents concentration of an electric field at the edge of the interface between the barrier metal and the semiconductor substrate, thereby improving the reverse breakdown characteristics.

Nickel-palladium Schottky junction in a cavity

Growing community of inventors

Amagasaki, Japan

Takeji Fujiwara