Ricoh Company, Ltd.

Ricoh Research Institute of General Electronics Co., Ltd.

Ricoh Research Institute of General Electronics

Rocoh Research Institute of General Electronics

Takehito Nagata

Masumitsu Ino

Mitsuhiro Kohata

Hiroyuki Tanaka

Masanori Itagaki

Masaki Hiroi

Masumi Shimada

Masamitsu Ino

A full-size optical sensor device includes a sensor array having a plurality of photoelectric conversion elements. The sensor array is divided into a plurality of groups, each of them having a plurality of the photoelectric conversion elements. The full-size optical sensor also includes a driving circuit for selectively driving the photoelectric conversion elements of the sensor array. The driving circuit includes a shift register and a selector for selecting one of the driven photoelectric conversion elements in accordance with an external control signal and a shifting operation of the shift register. The selector includes a plurality of circuit sets, each of the circuit sets being connected between one of the bits of the shift register and one of the groups having photoelectric conversion elements. Each of the circuit sets selects one of the driven photoelectric conversion elements in accordance with the external control signal and a signal from one of the bits of the shift register.

Full-size optical sensor device having improved driving means

A contact type image sensor has a driving circuit part which sequentially drives a plurality of photoelectric conversion elements of a photodetector in blocks which respectively have an arbitrary number of photoelectric conversion elements. The driving circuit part has a pair of shift registers, one for sequentially selecting the block and the other for sequentially selecting each of the photoelectric conversion elements within the selected block.

Contact type image sensor

A contact type image sensor includes a transparent base plate having a first surface and a second surface opposite to each other, a light receiving layer formed on the first surface of the transparent base plate, the light receiving layer generating an electric signal in response to light irradiated thereon, a driving circuit layer formed on the first surface of the transparent base plate, the driving circuit layer including a thin-film transistor for driving the light receiving member, and a conducting thin film formed on at least the second surface of the transparent base plate to thereby electrically shield the light receiving layer and the driving circuit layer.

Contact type image sensor with electric shielding

A photoelectric conversion semiconductor device comprising photelectric conversion elements, selection switching elements and a driving circuit for sequentially driving the photoelectric elements. The above structural elements are formed on an insulating and transparent substrate. The driving circuit including a plurality of one-bit shift registers each having one switch and two series-connected complementary metal oxide semiconductor (CMOS) inverters. An input signal of each one-bit shift register is supplied to one of the CMOS inverters. An output signal of the other of the CMOS inverters is supplied to a next stage of the one-bit shift register. One of the output signals of the two CMOS inverters is supplied to one of the selection switching elements.

Photoelectric conversion semiconductor device with noise limiting circuit

A linear solid-state image sensor includes a first chip and a second chip, each of the first and second chips having a long substrate, a plural number of photo-responsive elements formed in a line on the substrate, an analog switch circuit driving the photo-responsive elements, and a shift register shifting signal to make the analog switch circuit successively effective. The second chip is mechanically connected to the first chip so that a shift direction of the shift register circuit is in agreement with a shift direction of the shift register circuit of the first chip. The linear solid-stage image sensor further includes an external wiring connecting a first stage of the shift register circuit of the first chip and a final stage of the shift register circuit of the second chip, and an input wiring being formed on the substrate of the second chip and leading signal input from the terminal at the end of the side opposite a connection portion with the first chip to a first stage of the shift register circuit of the second chip.

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Yokohama, Japan

Takehito Nagata