National Institute of Advanced Industrial Science and Technology

Takehito Kozasa

Manabu Yoshida

Toshihide Kamata

Provided are an element applicable to a high-precision, high-sensitivity pressure detecting sensor and switch, a manufacturing method for the element; and a sensor, an electronic circuit, and an input device that include the element. The electret element of the present invention has a semiconductor sandwiched between a pair of electrodes, and an electret film disposed at a location opposite to the semiconductor via a gap. The electret element of the present invention may be structured so that the semiconductor contacts with the electret film, or so as to have micro-sized gaps therebetween. The electret film is semi-permanently kept in a positively or negatively charged state. By having a structure in which the electret film can contact with or approach the semiconductor, an amount of electric currents flowing between the pair of electrodes can be controlled.

Electret element and manufacturing method therefor, sensor, electronic circuit, and input device

The present invention provides a thin film transistor having excellent formability and processability, and particularly a thin film transistor using plastics as a substrate; an organic semiconductor as an active layer; and SiOthin films formed by coating as a sealing layer and a gate insulating layer, and a process for producing the same. The present invention provides a field-effect type thin film transistor having an active layer of an organic semiconductor, comprising on a plastic substrate, a sealing layer of a SiOthin film formed by coating; a gate electrode; a gate insulating layer of a SiOthin film formed by coating; gate and drain electrodes; and a semiconductor active layer. The high-quality SiOthin film is obtained by using a silicon compound as a starting material and irradiating a coated thin film of the solution of the starting material with light in an oxygen atmosphere.

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Tsukuba, Japan

Takehito Kozasa