Sumitomo Electric Industries, Limited

A.l.m.t. Corporation

Takehisa Yamamoto

Akira Yamakawa

Takao Nishioka

Kenji Matsunuma

Masaya Miyake

Yasushi Ito

Masashi Yoshimura

Jin-Joo Matsui

Tomoyuki Awazu

Osamu Komura

Matsuo Higuchi

Katsuhito Yoshida

Yoshiyuki Hirose

Koichi Sogabe

Hideaki Awata

Sadamu Ishidu

Isao Iwayama

Shinichi Yamagata

Noboru Uenishi

Shigeki Koyama

Masashi Okamoto

Tomoyuki Awatsu

Yasushi Itoh

Hiroyuki Kontani

Yuta Inoue

Yuka Kondo

A composite member includes a substrate composed of a composite material containing a metal and a non-metal. One surface of the substrate has spherical warpage of which radius of curvature R is not smaller than 5000 mm and not greater than 35000 mm. A sphericity error is not greater than 10.0 &#x3bc;m, the sphericity error being defined as an average distance between a plurality of measurement points on a contour of a warped portion of the substrate and approximate arcs defined by the plurality of measurement points. The substrate has a thermal conductivity not lower than 150 W/m&#xb7;K and a coefficient of linear expansion not greater than 10 ppm/K.

Composite member, heat radiation member, semiconductor device, and method of manufacturing composite member

A method of producing a silicon nitride ceramic component, comprising: grinding a silicon nitride sintered body comprising .alpha.--Si.sub.3 N.sub.4 having an average grain size of 0.5 .mu.m or smaller and .beta.'-sialon having an average grain size of 3 .mu.m or smaller in major axis and 1 .mu.m or smaller in minor axis into a predetermined size with a surface roughness of 1-7 .mu.m in ten-point mean roughness; heat treating the same at temperature range of 800.degree.-1200.degree. C. in the air; and standing it to allow to be cooled, whereby providing a residual stress in the ground surface before and after the heat treating as a residual compressive stress at a ratio of 1 or higher of the residual compressive stress after the heat treating to that before the heat treating (residual compressive stress after the heat treating/residual compressive stress before the heat treating), preferably 5 or more.

Method of producing silicon nitride ceramic component

A ceramic die for cutting and shaping lead frames, in which at least a working section thereof is made of a specific ceramic material having an iron and cobalt content of less than 100 ppm in total. The ceramic die can be formed in a complex shape with a high precision and has a prolonged lifetime because of its superior mechanical properties, such as high wear resistance and high strength, and less probability of adhesion of foreign matter such as solder or the lead frame material thereto. Even if the solder or lead frame material is adhered onto the die, the adhered matter can be removed through a simple procedure in a shortened time. The die is further improved by depositing a hard carbon film onto the surface of the working section.

Ceramic die for cutting and shaping lead frames and method of cleaning

A grind-machining method of ceramic materials characterized in that a peripheral speed of a grinding wheel relative to a working surface is set to 50 to 300 m/sec, a feed stroke speed of the working surface of the grinding wheel in a working direction is set to 50 to 200 m/min, and preferably, a down-feed speed of the working surface of the grinding wheel in a direction orthogonal to the surface of the workpiece is set to 0.05 to 3 mm/min. The grind-machining method of ceramic materials can reduce a grinding force at the time of grinding of ceramic materials and residual defects due to machining, and at the same time, can accomplish high machining efficiency.

Grind-machining method of ceramic materials

A silicon nitride sintered body characterized by comprising crystal grains having a linear density of 60 to 120 per 50 .mu.m length as measured in an arbitrary two-dimensional section of the sintered body. The silicon nitride sintered body has a shock compressive elasticity limit (Hugoniot-elastic limit) of 15 GPa or more and is substantially composed of crystal phases of .alpha.-silicon nitride and .beta.'-sialon. The percentages of the .alpha.-silicon nitride and .beta.'-sialon are not more than 30% and not less than 70%, respectively. The silicon nitride sintered body is particularly excellent in mechanical strengths at room temperature as well as in productivity and cost efficiency and is useful for applications as the material of parts where a particularly high impact strength is required, such as a valve train mechanism for automobile parts.

Silicon nitride sintered body

Silicon nitride sintered bodies consisting of prismatic crystal grains of Si.sub.3 N.sub.4 and/or sialon, equi-axed crystal grains of Si.sub.3 N.sub.4 and/or sialon, a grain boundary phase existing among the prismatic and equi-axed crystal grains and dispersed particles in the grain boundary phase, in which the prismatic crystal grains have an average grain size of 0.3 .mu.m or less in minor axis and an average grain size of 5 .mu.m or less in major axis, the equi-axed crystal grains have an average grain size of 0.5 .mu.m or less and the dispersed particles have an average size of 0.1 .mu.m or less, the volume of the dispersed particles being 0.05% by volume or more based on the total volume of the rest of the sintered body. The silicon nitride sintered bodies have a strength sufficient for use as structural materials of machine parts or members, with a minimized scattering of the strength as well as high reliability, superior productivity and advantageous production cost.

A silicon sintered body comprising a matrix phase consisting of silicon nitride and a grain boundary phase in which the silicon nitride consists of 66 to 99% by volume of .beta.-Si.sub.3 N.sub.4 and/or .beta.'-sialon with the balance being .alpha.-Si.sub.3 N.sub.4 and/or .alpha.'-sialon, the .beta.-Si.sub.3 N.sub.4 and/or .beta.'-sialon consisting of hexagonal rod-like grains having a diameter of 500 nm or less in the minor axis and an aspect ratio 5 to 25, the .alpha.-Si.sub.3 N.sub.4 and/or .alpha.'-sialon consisting of equi-axed grains having an average diameter of 300 nm or less, and titanium compounds are contained within the grains of the matrix phase and in the grain boundary phase. The sintered body is produced by mixing (1) 100 parts by weight of .alpha.-Si.sub.3 N.sub.4 powder, (2) 0.1 to 10 parts by weight of titanium oxide having an average particle size of 100 nm or less and (3) 2 to 15 parts by weight, in total, of specified sintering aids; molding the resultant powder mixture into a green compact; subjecting the green compact to primary sintering and secondary sintering under the prescribed conditions.

Silicon nitride sintered body and process for producing the same

The present invention provides an improved adjusting shim used in a valve train for an internal combustion engine for an automobile. The adjusting shim produced from a base material consisting of a ceramic material containing 80 to 98 wt. % of silicon nitride and/or sialon and has a porosity of not more than 3%, a bending strength of not less than 1.0 GPa and an impact compressive elastic limit (Hugoniot elastic limit) of not less than 15 GPa, wherein the base material is provided on the surface thereof which contacts a cam with a ceramic surface layer having a composition different from that of the base material and a hardness lower than that of the base material. The adjusting shim of the present invention enables a power loss of a valve train to be minimized; the abrasion resistance thereof to be improved; and the fuel economy, the performance and durability of an internal combustion engine to be improved.

Adjusting shim

Described are sintered silicon nitride bodies useful as materials for parts required to have strength, especially excellent impact strength for items such as automobile parts and machine parts. The sintered Si.sub.3 N.sub.4 bodies contain 80-98 wt. % of silicon nitride and have a porosity not higher than 3% and an shock compressive elasticity limit of at least 15 GPa.

Sintered silicon nitride bodies suitable for use as high impact materials

A silicon nitride sintered body comprising .alpha.-silicon nitride including .alpha.'-sialon and .beta.'-sialon including .beta.-silicon nitride in which the content of the .alpha.-silicon nitride including .alpha.'-sialon in the surface part thereof is less than its content in the inner part thereof. The silicon nitride sintered body is excellent in mechanical strength at ordinary temperature, productivity and cost efficiency.

The present invention relates to a silicon nitride sintered body [wherein the composition of Si.sub.3 N.sub.4 -first aid (Y.sub.2 O.sub.3 +MgO)-second aid (at least one of Al.sub.2 O.sub.3 and AlN)] falls within a range defined by lines joining points A, B, C and D in FIG. 1, the crystal phase of the sintered body contains both .alpha.-Si.sub.3 N.sub.4 and .beta.'-sialon, and the relative density is 98% or more. This sintered body is produced by subjecting a green compact of the above-described source to primary sintering in a nitrogen gas atmosphere at 1300 to 1700.degree. C. so that the relative density reaches 96% or more, and the precipitation ratio of the .alpha.-Si.sub.3 N.sub.4 crystal phases to the .beta.'-sialon crystal phase in the sintered body is in the range of from 40:60 to 80:20; and then subjecting the primary sintered body to secondary sintering in a nitrogen gas atmosphere at 1300 to 1700.degree. C. so that the relative density reaches 98% or more. The sintered body has superior strength properties, especially at ordinary temperatures, and can be produced with a high productivity in a high yield at a low cost.

The present invention relates to a silicon nitride sintered body [wherein the composition of Si.sub.3 N.sub.4 -first aid (Y.sub.2 O.sub.3 +MgO)-second aid (at least one of Al.sub.2 O.sub.3 and AlN)] falls within a range defined by lines joining points A, B, C and D in FIG. 1, the crystal phase of the sintered body contains both .alpha.-Si.sub.3 N.sub.4 and .beta.'-sialon, and the relative density is 98% or more. This sintered body is produced by subjecting a green compact of the above-described source to primary sintering in a nitrogen gas atmosphere at 1300.degree. to 1700.degree. C. so that the relative density reaches 96% or more, and the precipitation ratio of the .alpha.-Si.sub.3 N.sub.4 crystal phases to the .beta.'-sialon crystal phase in the sintered body is in the range of from 40:60 to 80:20; and then subjecting the primary sintered body to secondary sintering in a nitrogen gas atmosphere at 1300.degree. to 1700.degree. C. so that the relative density reaches 98% or more. The sintered body has superior strength properties, especially at ordinary temperatures, and can be produced with a high productivity in a high yield at a low cost.

Disclosed is a silicon nitride sintered body produced by subjecting a green compact of a mixed powder composed of 1) a silicon nitride powder having a percentage .alpha. crystallization of 93% or more and a mean grain diameter of 0.7 .mu.m or less and 2) 5 to 15% by weight in total of a first sintering aid selected from among rare earth element, yttrium oxide and lanthanide oxides and a second sintering aid consisting of aluminum oxide or nitride and at least one selected from among oxides and nitrides of Mg, Ca and Li, to primary sintering in a nitrogen gas atmosphere under a pressure of 1.1 atm or less at 1500.degree. to 1700.degree. C.; and subjecting the sintered body to secondary sintering in a nitrogen gas atmosphere under a pressure of 10 atm or more at the primary sintering temperature or below, thereby giving a sintered body wherein the relative density of the sintered body is 99% or more and the precipitation ratio of an .alpha.-Si.sub.3 N.sub.4 (including .beta.'-sialon) crystal phase ranges from 1:3 to 1:8 in terms of the peak intensity ratio in X-ray diffraction.

Growing community of inventors

Itami, Japan

Takehisa Yamamoto