Sharp Kabushiki Kaisha Corporation

Takehisa Sugimoto

Tetsuya Tarui

Hidenobu Kimoto

Yoshihiro Seguchi

There are provided a display device including a highly reliable wiring having excellent adhesion to an insulating film, and a method for manufacturing the same. A molybdenum-niobium layer has good adhesion to an insulating film, and thus, a first wiring having the molybdenum-niobium layer as an upper layer wiring is tightly adhered to a gate insulating film which is formed on the surface of the upper layer wiring. When there is a need to exchange a semiconductor chip mounted on a connection terminal that is provided at an end portion of a wiring such as a gate lead line or a source lead line formed of the first wiring, an ACF which was used for pressure-bonding of the semiconductor chip remains on the connection terminal even if the semiconductor chip is peeled off. To thoroughly remove the ACF, a force has to be applied to the connection terminal, but because the gate insulating film is tightly adhered to the molybdenum-niobium layer, the gate insulating film protecting the periphery of the connection terminal is not easily peeled off.

Method for manufacturing display device including a wiring layer of a molybdenum-based material

An active matrix substrate in a liquid crystal panel of an FFS mode has a data lineincluding an amorphous Si film, an n+amorphous Si film, a main conductor part, and an IZO film. The main conductor partand the IZO filmare etched at a portion close to the end of a covered region of a photoresist, to form the n+amorphous Si filmlarger than the main conductor partand the IZO film. A pattern of a photomask for a source layer is made larger than a pattern of a photomask for a pixel electrode layer, to form the amorphous Si filmlarger than the n+amorphous Si film. The main conductor partis formed of a molybdenum-based material, and in a layer over the data line, two-layered protective insulating films are formed such that a compressive stress is generated in one film and a tensile stress is generated in the other film. Accordingly, a high-yield active matrix substrate having a common electrode is provided.

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Sakai, Japan

Takehisa Sugimoto