Average Co-Inventor Count = 1.55
ph-index = 21
The patent ph-index is calculated by counting the number of publications for which an author has been cited by other authors at least that same number of times.
Company Filing History:
1. Canon Kabushiki Kaisha (242 from 90,331 patents)
2. Sumitomo Chemical Company, Limited (24 from 6,879 patents)
3. Sciocs Company Limited (10 from 40 patents)
4. Olympus Corporation (8 from 8,152 patents)
5. Hitachi Cable, Inc. (4 from 836 patents)
6. Nichias Corporation (4 from 254 patents)
7. Osaka University (3 from 975 patents)
8. Olympus Optical Company, Ltd. (2 from 5,729 patents)
9. Daikin Industries, Ltd. (1 from 4,223 patents)
10. Shimizu Corporation (1 from 24 patents)
11. Hosei University (1 from 13 patents)
12. Itochu Plastics Inc. (1 from 4 patents)
287 patents:
1. 12446281 - Nitride semiconductor substrate manufacturing method, and laminated structure
2. 12435441 - Method for manufacturing nitride semiconductor substrate, nitride semiconductor substrate, and laminate structure
3. 12399364 - Wearable device, control device, system, control method, and non-transitory computer readable medium
4. 12174132 - Nitride semiconductor substrate, laminated structure, and method for manufacturing nitride semiconductor substrate
5. 12091774 - Nitride semiconductor substrate, laminated structure, and method for manufacturing nitride semiconductor substrate
6. 12071707 - Method for manufacturing nitride semiconductor substrate, nitride semiconductor substrate, and laminate structure
7. 12032163 - Wearable device, control device, system, control method, and non- transitory computer readable medium
8. 11970784 - Nitride semiconductor substrate, method for manufacturing nitride semiconductor substrate, and laminated structure
9. 11967617 - Nitride semiconductor substrate, laminate, substrate selection program, substrate data output program, off-angle coordinate map, and methods thereof
10. 11908688 - Method for manufacturing nitride semiconductor substrate, nitride semiconductor substrate and layered structure
11. 11873578 - Method for manufacturing nitride semiconductor substrate and nitride semiconductor substrate
12. 11718927 - Group III nitride crystal substrate having a diameter of 4 inches or more and a curved c-plane with a radius of curvature of 15 m or more
13. 11706396 - Image processing apparatus that performs processing concerning display of stereoscopic image, image processing method, and storage medium
14. 11640906 - Crystal laminate, semiconductor device and method for manufacturing the same
15. 11339053 - Nitride crystal