Canon Kabushiki Kaisha

Sumitomo Chemical Company, Limited

Sciocs Company Limited

Olympus Corporation

Hitachi Cable, Inc.

Nichias Corporation

Osaka University

Olympus Optical Company, Ltd.

Daikin Industries, Ltd.

Shimizu Corporation

Hosei University

Itochu Plastics Inc.

Takehiro Yoshida

Makoto Kobayashi

Takeshi Ono

Minoru Yokoyama

Akihiro Tomoda

Yasushi Ishida

Takashi Awai

Satoshi Wada

Tomoyuki Takeda

Masakatsu Yamada

Masaya Kondo

Hisao Terajima

Takahiro Kato

Masatomo Shibata

Motoaki Yoshino

Daisuke Suga

Shunichi Fujise

Kazuhiro Sugawara

Kenzo Sakakibara

Fumiyuki Takiguchi

Fumimasa Horikiri

Shigeo Miura

Toshio Kenmochi

Kozo Toda

Junji Iguchi

Yoshio Yoshiura

Toru Nakayama

Kazutaka Matsueda

Sadasuke Kurahayashi

Naoji Hayakawa

Hideya Tabeta

Hideki Shimizu

Kazuto Yanagisawa

Hitoshi Saito

Satoshi Watanabe

Toru Maeda

Masashi Yoshimura

Hajime Fujikura

Teruyuki Nishii

Hiroya Fukuyama

Yuji Kurosawa

Yukio Nohata

Mamoru Imade

Koji Matsumoto

Koichi Matsumoto

Kenichi Nakamura

Yasuo Fujii

Mamoru Osada

Yosuke Ezumi

Kenji Hashimoto

Yusuke Mori

Shigeru Koizumi

Toshifumi Nakajima

Koji Harada

Takayuki Suzuki

Taichiro Konno

Toshiaki Saito

Junnosuke Kataoka

Hiroshi Atobe

Susumu Matsuzaki

Shoichi Yamaguchi

Kazutoshi Watanabe

Toru Ikeda

Yukio Murata

Michihiro Izumi

Tatsuya Yaguchi

Yuichi Oshima

Hiroyuki Noguchi

Masahiro Suzuki

Yusuke Shirakawa

Yasuyuki Nakamura

Naoya Watanabe

Keizo Sasai

Hirohisa Sawada

Takashi Sato

Hiroshi Nobuta

Takumi Uehara

Hiroki Ito

Shohei Kobayashi

Tomoyoshi Mishima

Fumihiko Nakamura

Masatomo Takahashi

Akira Usui

Takuma Mikawa

Masayuki Imanishi

Kaori Nakagawa

Toshiro Okamura

Shingo Kashima

Masaaki Okada

Kunihiro Shirai

Masao Kiguchi

Hideo Sato

Koji Okabe

Naoki Sugawara

Shin Tsuda

Takuji Nakatsuma

Masakatsu Iwata

A method for manufacturing a nitride semiconductor substrate by using a vapor phase growth method, including: a step of preparing a base substrate of a single crystal of a group III nitride semiconductor and in which a low index crystal plane closest to a main surface is a (0001) plane; an etching step of the base substrate to roughen the main surface; a first step of growing a first layer by epitaxially growing a single crystal of a group III nitride semiconductor on the main surface, and at least some of the plurality of recessed portions being gradually expanded toward an upper side of the main surface of the base substrate, the first layer including a first surface from which the (0001) plane has disappeared and that is constituted only by the inclined interfaces; and a second step of growing a second layer including a mirror second surface.

Nitride semiconductor substrate manufacturing method, and laminated structure

A step of preparing a base substrate of a single crystal of a group III nitride semiconductor; a growth inhibition layer forming step of performing in situ formation of a growth inhibition layer over the entire main surface of the base substrate in a vapor phase growth apparatus; a first step of growing a first layer by epitaxially growing a single crystal of a group III nitride semiconductor on the main surface of the base substrate via openings in the growth inhibition layer by using the vapor phase growth apparatus where the base substrate on which the growth inhibition layer has been formed is placed in the vapor phase growth apparatus; and a second step of growing a second layer with a mirror surface by epitaxially growing a single crystal of a group III nitride semiconductor on the first layer so as to make the inclined interfaces disappear.

Method for manufacturing nitride semiconductor substrate, nitride semiconductor substrate, and laminate structure

A wearable device that is usable in a plurality of usage forms which has a notification unit that notifies a user of information indicating a recommended usage form out of the plurality of usage forms, the information being determined based on information relating to an external environment.

Wearable device, control device, system, control method, and non-transitory computer readable medium

A nitride semiconductor substrate that has a diameter of 2 inches or more and includes a main surface for which the closest low index crystal plane is a (0001) plane. The ratio of FWHM1to FWHM2is 80% or more.

Nitride semiconductor substrate, laminated structure, and method for manufacturing nitride semiconductor substrate

A nitride semiconductor substrate that is constituted by a single crystal of a group III nitride semiconductor and includes a main surface for which the closest low index crystal plane is a (0001) plane includes an inclined interface growth region that has grown with inclined interfaces other than the (0001) plane serving as growth surfaces. A ratio of an area occupied by the inclined interface growth region in the main surface is 80% or more. When a dislocation density is determined based on a dark spot density by observing the main surface in a field of view that is 250 μm square using a multiphoton excitation microscope, the main surface does not include a region that has a dislocation density higher than 3×10cm, and the main surface includes dislocation-free regions that are 50 μm square and do not overlap each other, at a density of 100 regions/cmor more.

A method of making a semiconductor including a step of preparing a base substrate; a first step of epitaxially growing a single crystal of a group III nitride semiconductor having a top surface with (0001) plane exposed, directly on the main surface of the base substrate, forming a plurality of concaves composed of inclined interfaces other than the (0001) plane on the top surface, gradually expanding the inclined interfaces toward an upper side of the main surface of the base substrate, making the (0001) plane disappear from the top surface, and growing a first layer whose surface is composed only of the inclined interfaces; and a second step of epitaxially growing a single crystal of a group III nitride semiconductor on the first layer, making the inclined interfaces disappear, and growing a second layer having a mirror surface, and a semiconductor made thereby.

Wearable device, control device, system, control method, and non- transitory computer readable medium

There is provided a nitride semiconductor substrate having a diameter of 2 inches or more and having a main surface whose closest low index crystal plane is a (0001) plane, wherein X-ray locking curve measurement for (0002) plane diffraction, which is performed to the main surface by irradiating with (Cu) Kα1 X-rays through a two-crystal monochromator of Ge (220) plane and a slit, reveals that full width at half maximum FWHMb is 32 arcsec or less, and FWHMa−FWHMb obtained by subtracting FWHMb from FWHMa is 30% or less of FWHMa, wherein FWHMa is full width at half maximum of the (0002) plane diffraction when a slit width in ω direction is 1 mm, and FWHMb is full width at half maximum of the (0002) plane diffraction when a slit width in ω direction is 0.1 mm.

Nitride semiconductor substrate, method for manufacturing nitride semiconductor substrate, and laminated structure

A nitride semiconductor substrate including a group III nitride semiconductor crystal and having a main surface, wherein a low index crystal plane is (0001) plane curved in a concave spherical shape to the main surface, and the off-angle (θ, θ) at a position (x, y) in the main surface approximated by x representing a coordinate in a direction along <1-100> axis, y is a coordinate in a direction along <11-20> axis, (0, 0) represents a coordinate (x, y) of the center, θrepresents a direction component along <1-100> axis in an off-angle of <0001> axis with respect to a normal, θrepresents a direction component along <11-20> axis in the off-angle, (M, A) represents a rate of change in the off-angle (θ, θ) with respect to the position (x, y) in the main surface, and (M, A) represents the off-angle (θ, θ) at the center.

Nitride semiconductor substrate, laminate, substrate selection program, substrate data output program, off-angle coordinate map, and methods thereof

A method for manufacturing a nitride semiconductor substrate, including: a step of preparing a base substrate; a step of forming a mask layer having a plurality of openings on the main surface of the base substrate; a first step of growing a first layer whose surface is composed only of inclined interfaces; and a second step of epitaxially growing a single crystal of a group III nitride semiconductor on the first layer, making the inclined interfaces disappear, and growing a second layer having a mirror surface, wherein in the first step, at least one valley and a plurality of tops are formed at an upper side of each of the plurality of openings of the mask layer by forming a plurality of concaves on a top surface of the single crystal and making the (0001) plane disappear.

Method for manufacturing nitride semiconductor substrate, nitride semiconductor substrate and layered structure

A method for manufacturing a nitride semiconductor substrate by using a vapor phase growth method includes: a step of preparing a base substrate that is constituted by a material different from a single crystal of a group III nitride semiconductor; a step of growing a base layer on the upper side of the base substrate; a first step of growing a first layer by epitaxially growing a single crystal of a group III nitride semiconductor directly on the base surface of the base layer, the single crystal of the group III nitride semiconductor having a top surface at which a (0001) plane is exposed, and a plurality of recessed portions formed by inclined interfaces other than the (0001) plane being generated in the top surface; and a second step of growing a second layer that has a mirror-finished surface.

Method for manufacturing nitride semiconductor substrate and nitride semiconductor substrate

There is provided a method of manufacturing a crystal substrate, including: preparing a first crystal body which is a substrate comprising a single crystal of group III nitride produced by a vapor phase method and having a first main surface, and in which c-plane of the single crystal is curved in a concave spherical shape with a predetermined curvature; and growing a second crystal body comprising a single crystal of group III nitride on the first main surface, in a mixed melt containing an alkali metal and a group III element.

Group III nitride crystal substrate having a diameter of 4 inches or more and a curved c-plane with a radius of curvature of 15 m or more

An image processing apparatus that performs processing concerning the display of a stereoscopic image so as to improve the convenience of a user in viewing a stereoscopic image. A head mount display displays a stereoscopic image using image data including a plurality of images having different viewpoints. The image data is processed based on metadata attached to the image data. In a case where information indicating that the image data is associated with a file format which cannot cause the head mount display to perform display is included in the metadata, the image data is converted into a file format which can cause the head mount display to perform display.

Image processing apparatus that performs processing concerning display of stereoscopic image, image processing method, and storage medium

Provided is a crystal laminate including: a crystal substrate formed from a monocrystal of group III nitride expressed by a compositional formula InAlGaN (where 0&#x2264;x&#x2264;1, 0&#x2264;y&#x2264;1, 0&#x2264;x+y&#x2264;1), the crystal substrate containing at least any one of n-type impurity selected from the group consisting of Si, Ge, and O; and a crystal layer formed by a group III nitride crystal epitaxially grown on a main surface of the crystal substrate, at least any one of p-type impurity selected from the group consisting of C, Mg, Fe, Be, Zn, V, and Sb being ion-implanted in the crystal layer. The crystal laminate is configured in a manner such that an absorption coefficient of the crystal substrate for light with a wavelength of 2000 nm when the crystal substrate is irradiated with the light falls within a range of 1.8 cmor more and 4.6 cmor less under a temperature condition of normal temperature.

Crystal laminate, semiconductor device and method for manufacturing the same

An object of the present invention is to improve quality of a nitride crystal, and also improve performance and manufacturing yield of a semiconductor device manufactured using the crystal. Provided is a nitride crystal in which a composition formula is represented by InAlGaN (satisfying 0&#x2264;x&#x2264;1, 0&#x2264;y&#x2264;1, 0&#x2264;x+y&#x2264;1), and the concentration of B in the crystal is less than 1&#xd7;10at/cm, and each of the concentrations of O and C in the crystal is less than 1&#xd7;10at/cmin a region of 60% or more of a main surface.

Nitride crystal

Growing community of inventors

Tokyo, Japan

Takehiro Yoshida