Mitsubishi Materials Corporation

Takehiro Yonezawa

Kazuhiko Yamasaki

Kazutaka Fujiwara

Satoko Higano

Miki Adachi

Ai Takenoshita

The present invention is provided with a base electrode layer forming step of forming a base electrode layer on both surfaces of a thermistor wafer formed of a thermistor material, a chip forming step of obtaining a thermistor chip with a base electrode layer by cutting the thermistor wafer to form chips, a protective film forming step of forming a protective film formed of an oxide on an entire surface of the thermistor chip with a base electrode layer, a cover electrode layer forming step of forming a cover electrode layer by applying and sintering a conductive paste on an end surface of the thermistor chip with a base electrode layer, and a conduction heat treatment step of performing a heat treatment such that the base electrode layer and the cover electrode layer are electrically conductive, in which the electrode portion is formed.

Method of manufacturing thermistor

A thermistor has a thermistor element, a protective film, and an electrode portion. The protective film is formed of a SiOfilm having a film thickness in a range of 50 nm or more and 1000 nm or less. The protective film is formed in contact with the thermistor element. Alkali metal is unevenly distributed in a region including an interface between the thermistor element and the protective film.

Thermistor with protective film and manufacturing method thereof

A thermistor includes a thermistor element, a protective film formed on the surface of the thermistor element, and electrode portions formed on both end portions of the thermistor element, in which the protective film is formed of silicon oxide, and, as a result of observing a bonding interface between the thermistor element and the protective film, a ratio L/Lof a length L of an observed peeled portion to a length Lof the bonding interface in an observation field is 0.16 or less.

Thermistor and method for manufacturing thermistor

Provided are a thermistor element including a conductive intermediate layer containing RuOwhich can have a lower resistance and a thinner profile, whereby the increase in resistance can be suppressed even when peeling of the electrode proceeds; and a method for producing the same. The thermistor element according to the present invention includes: a thermistor bodymade of a thermistor material; a conductive intermediate layerformed on the thermistor body; and an electrode layerformed on the conductive intermediate layer, wherein the conductive intermediate layer has an aggregation structure of RuOparticles that are in electrical contact with each other where SiOis placed in the gaps in the aggregation structure, and has a thickness of 100 to 1000 nm.

Thermistor element and method for producing same

In a thermistor element, a thermistor body formed of a thermistor material, a conductive interlayer formed on the thermistor body, and an electrode layer formed on the conductive interlayer are provided, the conductive interlayer is formed along protrusions and recesses on a surface of the thermistor body, the conductive interlayer is a layer in which RuOgrains in contact with each other are uniformly distributed and SiOinterposes in gaps between the RuOgrains, and the conductive interlayer is formed in a state of adhering to the thermistor body along the protrusions and the recesses on the surface of the thermistor body.

Thermistor element and method for manufacturing same

This infrared light shielding laminate includes: an ITO particle-containing layer; and an overcoat layer which covers an upper surface of the ITO particle-containing layer, wherein core shell particles are present in a state of being in contact with each other in the ITO particle-containing layer, and the core shell particle includes an ITO particle serving as a core and an insulating material serving as a shell that covers the core.

Infrared light shielding laminate and infrared light shielding material using same

An ITO film having a band gap in a range of 4.0 eV to 4.5 eV.

Growing community of inventors

Naka, Japan

Takehiro Yonezawa