Sony Corporation

Takehiro Taniguchi

Hironobu Narui

Nobukata Okano

Noriko Ueno

Takahiro Arakida

Osamu Maeda

Katsuhisa Daio

Koichi Kobe

Yoshiaki Niwa

A semiconductor laser includes a columnar lamination structure including a first multi-layer reflection mirror, a first spacer layer, an AlGaInP (where 0&#x2266;x&#x3c;1 and 0&#x3c;y&#x3c;1) based active layer, a second spacer layer, a second multi-layer reflection mirror, and a lateral mode adjusting layer on a substrate in this order from the substrate and including a current narrowing layer. The current narrowing layer includes an unoxidized region in an in-plane central region and a circular oxidized region in the circumference of the unoxidized region. The later mode adjusting layer includes a high reflection region to correspond to the unoxidized region and a circular low reflection region in the circumference of the high reflection region. On the assumption that a diameter of the unoxidized region is Dand a diameter of the high reflection region is D, the diameters Dand Dsatisfy an expression of 0.8&#x3c;D/D&#x3c;1.5.

Semiconductor laser

A correction circuit is provided, which may reduce dullness of a light output waveform due to wavelength detuning. The correction circuit includes an RC time constant circuit. The RC time constant circuit is used to correct a waveform of a current pulse outputted from a current source, the current source driving a surface-emitting semiconductor laser in a pulsed manner, so that a pulse waveform of light output of the semiconductor laser is approximately a rectangle.

Correction circuit, drive circuit, light emitting device, and method of correcting current pulse waveform

A light stabilizer used for an electronic device including a plurality of electronic parts including a light source, a main power source for supplying a drive current to the electronic parts, and a start button for the light source, wherein the light stabilizer comprises, a heating power source that supplies a heating current to the light source to make the light source self-heat in a non-light emitting state, and a control section that executes control so that after the main power source is turned on, the heating current is supplied to the light source firstly out of the plurality of electronic parts to increase temperature of the light source to the degree higher than dew point temperature, and when the start button is pressed down, the drive current is supplied to make the light source emit light.

Light stabilizer, light stabilization method, and printer

In semiconductor light emitting sections capable of effectively improving electric cross-talk and effectively avoiding short-circuit between each of light emitting devices, in which a plurality of semiconductor light emitting sections are formed to a semiconductor substrate, and at least one of electrodes for the semiconductor light emitting sections and bonding pads lead out electrically from the electrodes and connected with external leads are formed on one main surface of a semiconductor substrate, a high resistance isolation region is formed, facing the main surface of the semiconductor substrate, below a portion between adjacent conductor layers for electrical leading from the electrode to the bonding pad.

Manufacturing method for light emitting device

A semiconductor emission element is disclosed including a plurality of the laser oscillator formed on the opposite side of a base of a substrate. P-side electrodes are connected to the laser oscillator while extract electrodes having a function of radiation by increasing its thickness, are connected to the p-side electrodes. The extract electrodes cover two of the laser oscillators while covering the other two laser oscillators with insulating layers in between. As a result, thermal interference can be terminated while deterioration of the performance of the emitting portion by generation of heat can be suppressed even if the substrate is provided on the base with the opposite side of the emitting portion of the substrate facing the base.

Method to manufacture a heat emission apparatus in a semiconductor laser

Photoelectric conversion element and method for manufacturing the same

It is an object to provide a semiconductor emission element which can promote radiation while being manufactured easily, and a method of manufacturing the same. In the semiconductor emission element of the invention, a plurality of the laser oscillator are formed on the opposite side of a base of a substrate which is supported by the base. P-sides electrodes are connected to the laser oscillator while extract electrodes having a function of radiation by thickening its thickness are connected to the p-side electrodes. The extract electrodes cover two of the laser oscillators while covering the other two laser oscillators with insulating layers in between. As a result, thermal interference can be terminated while deterioration of the performance of the emitting portion by generation of heat can be suppressed even if the substrate is provided on the base with the opposite side of the emitting portion of the substrate facing the base.

Heat emission apparatus in a semiconductor laser

Semiconductor light emitting device and manufacturing method thereof

A stripe portion extending in an <011> crystal axis direction of a compound semiconductor substrate ( ) in which a &lcub;100&rcub; crystalline surface is made a major surface is formed between stepped portions ( ), a laser resonator is formed in the stripe portion, the width of the stripe portion at one end surface of the laser resonator is made broader in width compared with the central portion and another end surface of the laser resonator. Then, in accordance with the shape of the stripe portion, the stripe shape of an active layer of the laser resonator is made broader in width than the center portion and the other end surface, whereby a semiconductor laser of a narrow field pattern with a low threshold value is obtained.

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Tokyo, Japan

Takehiro Taniguchi