Sharp Kabushiki Kaisha Corporation

Takehiro Shiomoto

Nobuyuki Miyauchi

Toshiyuki Tanaka

Saburo Yamamoto

Hidenori Kawanishi

Hiroshi Hayashi

Mitsuhiro Matsumoto

Taiji Morimoto

Kazuaki Sasaki

Shinji Kaneiwa

Masatsugu Masuda

Seiki Yano

Kenichi Yoshimura

Masaki Kondo

Katsushige Masui

Masataka Miyata

Takeshi Kawahara

Makoto Yoshimura

Hideaki Fujii

Toshihiko Yoshida

Shinzoh Murakami

Hiroshi Chikugawa

Masaru Ogawa

Zenpei Tani

Osamu Hamaoka

Makoto Tsuji

Ikuo Kohashi

Kenzo Nozaki

Masayuki Honda

A liquid crystal display device includes: a liquid crystal display panel that includes red color filters, green color filters, and blue color filters; and an illumination device that illuminates the liquid crystal display panel with white light. The illumination device includes light-emitting elements that emit blue light, a green phosphor that absorbs a portion of the blue light emitted from the light-emitting elements and then emits green light, and a red phosphor that absorbs a portion of the blue light emitted from the light-emitting elements and then emits red light. The blue color filters are made of a colored material that contains a dye, and the chromaticity values x and y of the white light emitted from the illumination device satisfy the relationships 0.24&#x3c;x and 0.24&#x3c;y.

Liquid crystal display apparatus

Provided is an optical pickup apparatus that can be made compact and is capable of producing stable push-pull signals. The optical pickup apparatus includes a light source, an objective lens, a diffraction element, a light-receiving element, and a control-driving section. The diffraction element receives light reflected from an optical recording medium. The light-receiving element receives light beams diffracted by the diffraction element. The light-receiving element has a plurality of light-receiving regions. The light-receiving region produces an output signal responsive to the quantity of the incident light beam. The control-driving section obtains differences among the output signals from a plurality of the light-receiving regions by calculation to derive a push-pull signal, and drives the objective lens under control on the basis of the push-pull signal.

Optical pickup apparatus

A semiconductor laser device has a laser chip, a stem having a block portion on which the laser chip is mounted, and a cap mounted on the stem so as to cover the block portion. The cap has a cutout portion into which the block portion is partially inserted. With this arrangement, the block portion is enlarged, so that the block portion is easily formed integrally with the stem to reduce the manufacturing cost of the stem, and that heat release is increased to improve operating lifetime and the temperature characteristic of the laser element.

Semiconductor laser device

A semiconductor laser device and optical pickup in which the reflectance of the side beam at a header portion will not adversely affect the characteristics of the optical pickup, and superior in productivity, and a method of fabricating such a semiconductor laser device are obtained. A reflector is attached on a side beam incident region of a leading end plane of a header mounted with a laser chip that emits a laser beam. Said side beam is one of the two side beams generated by the reflected &#xb1;first order beams and fed back through the optical system returning towards the header portion to strike the side beam incident region. The reflector reflects side beam outside the optical system.

Semiconductor laser device, optical pickup and fabrication method of semiconductor laser device

A semiconductor laser device has a stem having a mounting surface, a first semiconductor laser element directly or indirectly mounted onto the mounting surface of the stem, the first semiconductor laser element having an emission wavelength and a temperature dependence, and a second semiconductor laser element disposed on top of the first semiconductor laser element, the second semiconductor laser element having an emission wavelength different from the emission wavelength of the first semiconductor laser element and a temperature dependence lower than the temperature dependence of the first semiconductor laser element.

A semiconductor laser device ( ) comprises a first semiconductor laser element ( ) and a second semiconductor laser element ( ) of different wavelengths, which are mounted on a heat sink block ( ) directly or through a sub-mount provided on the heat sink block. The optical axes (A, B) of the semiconductor laser elements are substantially parallel to each other. The first and second semiconductor laser elements ( ) are mounted on the heat sink block ( ) in such a manner that a relationship of 0&lE;L&lE;d &plus;d &lE;160 &mgr;m is satisfied, where d is a distance between the optical axis (A) of the first semiconductor laser element ( ) and the center axis (O) of a condenser lens ( ) arranged in front of the semiconductor laser device (i.e., faced to the emission surfaces of the semiconductor laser elements), d is a distance between the optical axis (B) of the second semiconductor laser element ( ) and the center axis of the condenser lens, and L is a distance between the optical axes of the first and second semiconductor laser elements.

A semiconductor laser device includes a base, a semiconductor laser chip and a resin layer enclosing the laser chip. The base may have a monitor photodiode mounted thereon in the vicinity of the laser chip. The resin layer enclosing the laser chip or both of the laser chip and the monitor diode chip is made of a single synthetic resin having a thickness not greater than 500 .mu.m and also having a surface substantially parallel to an outwardly oriented beam emitting end face of the laser chip.

Semiconductor laser device and resin layer

A semiconductor laser device is disclosed which emits laser light from a facet. The semiconductor laser device comprises a multi-layered structure formed on a semiconductor substrate, the multi-layered structure having an AlGaAs active layer for laser oscillation, and a protective film formed on the facet, wherein a film containing sulfur is provided between the facet and the protective film.

Method for the production of a semiconductor laser

Semiconductor laser device with a sulfur-containing film provided

Growing community of inventors

Kashihara, Japan

Takehiro Shiomoto