Kyocera Corporation

Takehiro Nishimura

Chiaki Doumoto

Youji Furukubo

Masanori Okamoto

Katsuaki Masaki

Sentaro Yamamoto

Kazuya Shibata

A crystal growth method of the present disclosure includes: preparing a crystal growth-derived-layer forming substrate including (a) a substrate having a surface layer, (b) a mask pattern which is formed on the surface layer and which includes a plurality of strip bodies, and (c) a plurality of crystal growth-derived layers which are formed between and on the plurality of stripe bodies so as to have gaps therebetween above the plurality of strip bodies and which differ in lattice constant from the substrate having the surface layer; and growing semiconductor layers on the plurality of crystal growth-derived layers. The semiconductor layers are respectively grown on the plurality of crystal growth-derived layers formed so as to be separated from each other, and semiconductor layers on two adjacent ones of the plurality of crystal growth-derived layers are separated from each other.

Crystal growth method and a substrate for a semiconductor device

A crystal growth method of the present disclosure includes: preparing a substrate having a surface layer; forming a mask pattern including a plurality of strip bodies on the surface layer to separate the surface layer into segments by the plurality of strip bodies and expose part of the surface layer; and forming, on a plurality of growth regions constituted by the exposed part of the surface layer, a crystal growth-derived layer by causing a semiconductor crystal which differs in lattice constant from the substrate to grow by a vapor-phase growth process. Each of the plurality of strip bodies has side faces inclined so that a width between the side faces gradually decreases with distance from the surface layer.

Crystal growth method and semiconductor device manufacturing method

A light-emitting element housing member includes a substrate that is made of a ceramic and internally includes a deep-bottom-type space portion having an opening in at least one position thereof, wherein an inner wall of the space portion serves as a mounting part for a light-emitting element. A light-emitting element housing member includes a mounting part meant for mounting a light-emitting element and includes a substrate that includes a bottom base material having a rectangular shape in a planar view and a wall member provided on the bottom base material to enclose the mounting part in a U-shaped manner and have an opening in at least one portion thereof, wherein the substrate is integrally formed of a ceramic.

Light-emitting element housing member, array member, and light-emitting device

A semiconductor module of the present disclosure includes: a base body including a groove part of which two inner side surfaces are inclined, the base body including an electrode pad which is provided on at least one inner side surface; and a semiconductor element including a semiconductor substrate including a first surface, a second surface opposite to the first surface, and two side surfaces which are inclined in a diagonal direction to the first surface and are opposite to each other, a semiconductor layer located on the first surface, and an electrode disposed on at least one side surface. The semiconductor element is located in the groove part so that the at least one side surface is disposed along the at least one inner side surface of the base body, and at least one electrode of the semiconductor element is connected to the electrode pad of the base body.

Growing community of inventors

Kusatsu, Japan

Takehiro Nishimura