Kioxia Corporation

Takehiro Kondoh

Yuya Matsubara

Junichi Hashimoto

Soichi Yamazaki

Kei Watanabe

Toshiyuki Sasaki

Mitsuhiro Omura

Kosuke Horibe

Kaori Narumiya

Yusuke Kondo

Junya Fujita

A method for manufacturing a semiconductor device includes: forming a first film on a substrate; forming a second film containing at least carbon on the first film; forming a hole in the second film; and forming a recess, which communicates with the hole, in the first film by etching using the second film as a mask. In this method, the second film includes a first layer formed on the first film, and a second layer formed on the first layer. The first layer having a higher oxygen concentration than the second layer.

Method for manufacturing semiconductor device having a film with layers of different concentrations of elements

According to one embodiment, a method of manufacturing a semiconductor device includes forming a first film on a substrate. The method further includes forming a second film on the first film. The method further includes forming a recess in the first film using the second film as a mask. The second film includes a first layer having carbon and a second layer having carbon formed on the first layer. The second layer has a second carbon density lower than a first carbon density of the first layer.

Manufacturing method of semiconductor device

Growing community of inventors

Yokkaichi Mie, Japan

Takehiro Kondoh