Kabushiki Kaisha Toshiba

Takehiro Kondoh

Eishi Shiobara

Satoshi Nagashima

Shinichi Ito

Masamitsu Itoh

Yuji Kobayashi

Keisuke Kikutani

Kenji Chiba

Hisataka Meguro

Tomoyuki Takeishi

Hidefumi Mukai

Koutarou Sho

A semiconductor storage device according to an embodiment of the invention includes a semiconductor substrate and a plurality of memory cells on the semiconductor substrate. A first film is provided above the memory cells to form air gaps above a memory string in which the memory cells are connected in series.

Semiconductor storage device having communicated air gaps between adjacent memory cells

A pattern formation method according to the present embodiment includes forming a resist film on a treatment target material. The resist film is processed into resist patterns. A cross-link film or a coating agent protecting the resist film is coated onto the resist film. A self-organizing material is applied onto the resist film having the cross-link film or the coating agent coated thereon. The self-organizing material is thermally treated to achieve phase separation. A part of the self-organizing material which has been phase-separated is removed.

Pattern formation method and semiconductor device

According to one embodiment, a method of manufacturing a device, includes forming a first core including a line portion extending between first and second regions and having a first width and a fringe having a dimension larger than the first width, forming a mask on the fringe and on a first sidewall on the first core, removing the first core so that a remaining portion having a dimension larger than the first width is formed below the mask, forming a second sidewall on a pattern corresponding the first sidewall and the remaining portion, the second sidewall having a second width less than the first width and facing a first interval less than the first width in the first region and facing a second interval larger than the first interval in the second region.

Method of manufacturing a memory device using fine patterning techniques

This invention discloses an immersion multiple-exposure method including a first exposure step of performing, using a first mask, immersion exposure of a photoresist film formed on a substrate, a cleaning step of clearing the surface of the substrate, and a second exposure step of performing immersion exposure of the photoresist film using a second mask. No heating process is performed between the first exposure step and the second exposure step.

Immersion multiple-exposure method and immersion exposure system for separately performing multiple exposure of micropatterns and non-micropatterns

In the method for manufacturing a semiconductor device, a resist film is formed on a substrate and is processed to be provided with openings to form a first resist pattern. Additive-containing layers containing an additive that changes a state of the resist film to a soluble state for a developer are formed so as to cover the first resist pattern. A first resin film having a nature of changing to a soluble state for the developer by containing the additive is formed in the openings of the first resist pattern. The additive is diffused into the first resist pattern and the first resin film to form first and second additive-diffusing portions which can be solved in the developer. The first and second additive-diffusing portions are removed by the developer to form second resist pattern made of remaining portions in the first resist pattern and the first resin film.

Method for manufacturing semiconductor device

A pattern forming method according to an embodiment of the present invention includes forming a resist layer on a semiconductor substrate, selectively exposing the resist layer, developing the selectively exposed resist layer, decomposing photosensitizer in the resist layer after developing the resist layer, removing the photosensitizer or acid generated from the decomposed photosensitizer, applying a shrink material on the developed resist layer after removing the photosensitizer or the acid generated from the decomposed photosensitizer, performing a heating process for the resist layer on which the shrink material is applied, and removing a part of the heat-processed shrink material.

Pattern forming method

A pattern forming method includes the following steps. A resist pattern is formed on a to-be-processed film. A mask pattern including the resist pattern and a resin film formed on a surface of the resist pattern is formed. Slimming of the mask pattern is executed.

Pattern forming method and semiconductor device manufacturing method

A pattern forming method comprises forming a first resist pattern on a substrate, irradiating light on the first resist pattern, forming a resist film including a cross-linking material on the substrate and the first resist pattern, forming a second resist pattern including a cross-linking layer formed at an interface between the first resist pattern and the resist film by causing a cross-linking reaction at the interface, and irradiating light on the first resist pattern including setting an amount of the light irradiated on the first resist pattern such that a dimension of the second resist pattern is to be a predetermined dimension based on a previously prepared relationship between a difference between a dimension relating to the first resist pattern and a dimension relating to the second resist pattern and the amount of the light irradiated on the first resist pattern.

Pattern forming method and method for manufacturing a semiconductor device

This invention provides a pattern formation material for electron beam lithography, which contains an alkali-soluble resin, a photoacid generator, and dissolution inhibiting groups, and also provides a pattern formation method and exposure mask fabrication method using the material. As the dissolution inhibiting groups, this invention uses a first dissolution inhibiting group which increases the sensitivity of the pattern formation material when the material is left to stand in a vacuum after an electron beam irradiation, and a second dissolution inhibiting group which decreases the sensitivity under the same condition. In this invention, the ratio of the first dissolution inhibiting group to the second dissolution inhibiting group is so adjusted that the size of an alkali-soluble portion, which is made soluble in an alkali solution by an electron beam irradiation, is substantially held constant independently of the standing time in a vacuum.

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Yokkaichi, Japan

Takehiro Kondoh