Denso Corporation

Toyota Jidosha Kabushiki Kaisha

Toray Industries, Inc.

Toyota Boshoku Kabushiki Kaisha

Toyota Tsusho Corporation

Toyota Auto Body Co., Ltd.

Kabushiki Kaisha Otsuka

Toyota Boshoku Co. Ltd.

Toyota Shatai Kabushiki Kaisha

Takehiro Kato

Yusuke Yamashita

Katsumi Suzuki

Yuichi Takeuchi

Sachiko Aoi

Yasushi Urakami

Toru Onishi

Yuhei Maeda

Tadashi Misumi

Masanori Hashiba

Takashi Inoh

Hisashi Okuyama

Kazuya Matsumura

Hiroshi Urayama

Tomomichi Fujiyama

Masato Noborio

Osamu Mito

Kumiko Sango

Junichi Uehara

Eiji Sugiyama

Kousuke Tamaki

Kazuo Hayakawa

Masato Nomura

A semiconductor device includes a semiconductor substrate having an active region in which a main switching element structure is formed, a current sense region in which a sense switching element structure is formed, and a peripheral region located around the active region and the current sense region. The semiconductor substrate is a 4H-SiC substrate having an off angle in a <11-20> direction. The current sense region is disposed in a range where the active region is not present when viewed along the <1-100> direction.

Semiconductor device

In a semiconductor device, a source region is made of an epitaxial layer so as to reduce variation in thickness of a base region and variation in a threshold value. Outside of a cell part, a side surface of a gate trench is inclined relative to a normal direction to a main surface of a substrate, as compared with a side surface of a gate trench in the cell part that is provided by the epitaxial layer of the source region being in contact with the base region.

Silicon carbide semiconductor device and method for manufacturing the same

A semiconductor device includes a semiconductor element having a substrate, a drift layer, a base region, a source region, trench gate structures, an interlayer insulating film, a source electrode, and a drain electrode. The substrate is made of silicon carbide. The drift layer is disposed on the substrate and has an impurity concentration lower than the substrate. The base region is made of silicon carbide and disposed on the drift layer. The source region is made of silicon carbide having an impurity concentration higher than the drift layer. Each trench gate structure has a gate trench, a gate insulating film, and a gate electrode. The interlayer insulating film covers the gate electrode and the gate insulating film. The source electrode is in ohmic-contact with the source region. The drain electrode is disposed on a rear surface of the substrate.

Silicon carbide semiconductor device and method for manufacturing same

In a semiconductor device, a semiconductor element is formed in a semiconductor, an interlayer insulating film having a contact hole and containing at least one of phosphorus and boron is disposed above the semiconductor, a metal electrode is disposed above the interlayer insulating film and is connected to the semiconductor element through the contact hole, and the interlayer insulating film is filled with hydrogen.

Semiconductor device and manufacturing method of semiconductor device

An IGBT manufacturing method is provided. The IGBT has an n-type emitter region, a p-type top body region, an n-type intermediate region, a p-type bottom body region, an n-type drift region, a p-type collector region, trenches penetrating the emitter region, the top body region, the intermediate region and the bottom body region from an upper surface of a semiconductor substrate and reaching the drift region, and gate electrodes formed in the trenches. The method includes forming the trenches on the upper surface of the semiconductor substrate, forming the insulating film in the trenches, forming an electrode layer on the semiconductor substrate and in the trenches after forming the insulating film, planarizing an upper surface of the electrode layer, and implanting n-type impurities to a depth of the intermediate region from the upper surface side of the semiconductor substrate after planarizing the upper surface of the electrode layer.

IGBT and IGBT manufacturing method

A raw material including a mixture of a natural fiber and a thermoplastic fiber is supplied to a surface of a rotating rotary body. The natural and thermoplastic fibers are scattered toward a carrying surface of a conveyor belt by the rotational force of the rotary body. An air blower may direct pressurized air to the scattered raw material in order to further effect separation of the natural and thermoplastic fibers. Consequently, the natural fibers and the thermoplastic fibers are deposited such that the relative concentration of the natural fibers and the thermoplastic fibers gradually and seamlessly changes or varies across the thickness of depth of the resulting molded fiber material.

Molded fiber materials and methods and apparatus for making the same

To provide a fiberboard capable of reducing a load on the environment at all states of producing, using, and abolishing and moreover having a high degree of bending strength and a high bending-strength retention rate at high temperature and high humidity so as to be usable for an automobile interior material or building material and a fiber-board producing method. The fiberboard is formed by mixing natural fiber with polylactic acid resin serving as a binder and has an apparent density of 0.2 g/cm.

Fiber board and its producing method

Growing community of inventors

Toyota, Japan

Takehiro Kato