Nikon Corporation

Saturn Licensing LLC

Futaba Denshi Kogyo K.k.

Kasuga Denki, Inc.

Takehiko Ueda

Yoshijiro Ushio

Akira Ishikawa

Toru Iwane

Toshimi Watanabe

Itaru Homma

Tatsuya Senga

Hiroyuki Abe

Yukihiko Shimizu

Muneki Hamashima

Motoo Koyama

Eiji Matsukawa

Kinya Ueda

Masahiro Furuta

Yukihira Sakurai

Masaharu Yoshino

Andrew H Barada

Hosei Nakahira

Tadao Isami

An electronic apparatus activation control apparatus includes a communication unit and a data processing unit. The communication unit is configured to perform communication via a network. The data processing unit is configured to output an activation instruction to a network apparatus connected to the network through the communication unit. The data processing unit recognizes a state transition from a non-active state to an active state of the electronic apparatus activation control apparatus and outputs the activation instruction to the network apparatus on the basis of recognition of the state transition.

Electronic apparatus activation control apparatus, electronic apparatus activation control system, electronic apparatus activation control method, and program

There is a possibility that an arrangement of a cleaning device and a drying device may result in an inefficient usage of a space for an installation. A cleaning and drying apparatusfor a plate including a biochip is provided with: a cleaning devicethat is configured to clean the plate; and a drying devicethat is configured to dry the plate, the drying deviceis arranged above the cleaning device

Washing/drying apparatus, screening apparatus, washing/drying method, and screening method

The relationship between polishing conditions constituting elements and the worked shape (amount of polishing) obtained by means of these polishing conditions is input beforehand into polishing condition determining means along with the type of the object of polishing, and polishing conditions (invariable polishing conditions) that are used in common for the polishing of this object of polishing. The polishing condition determining means determine the polishing conditions on the basis of these conditions. Specifically, the above-mentioned polishing conditions constituting elements are given in a time series, or combinations of the above-mentioned polishing conditions constituting elements are converted into variations in the swinging velocity of the polishing body, and the swinging velocity corresponding to the swinging position is determined. The polishing apparatus control means input the polishing conditions determined by the polishing condition determining means, and control the polishing apparatus so that these polishing conditions are realized. As a result, working conditions for obtaining a specified worked shape in a working apparatus can be simply and accurately determined.

Method for predicting worked shape, method for determining working conditions, working method, working system, semiconductor device manufacturing method, computer program and computer program storage medium

The spectral reflectance spectrum of an object of polishing that has reached the polishing endpoint is found ahead of time, the spectral reflectance spectrum of the object of polishing is found during polishing, and the correlation coefficient of these is seen as parameter 1. Meanwhile, the sum of the absolute values of the difference between the first order differentials of these is seen as parameter 2. Then, when parameter 1 is in a range exceeding a specific value, and parameter 2 is at its minimum, it is concluded that the polishing endpoint has been reached. Thus, it is possible to provide a method for detecting the polishing endpoint in a highly reliable CMP polishing apparatus.

Method for detecting polishing end in CMP polishing device, CMP polishing device, and semiconductor device manufacturing method

The relationship between polishing conditions constituting elements and the worked shape (amount of polishing) obtained by way of these polishing conditions is input beforehand into polishing condition determining mechanism along with the type of the object of polishing, and polishing conditions (invariable polishing conditions) that are used in common for the polishing of this object of polishing. The polishing condition determining mechanism determines the polishing conditions on the basis of these conditions. Specifically, the above-mentioned polishing conditions constituting elements are given in a time series, or combinations of the above-mentioned polishing conditions constituting elements are converted into variations in the swinging velocity of the polishing body, and the swinging velocity corresponding to the swinging position is determined. The polishing apparatus control mechanism input the polishing conditions determined by the polishing condition determining mechanism, and control the polishing apparatus so that these polishing conditions are realized. As a result, working conditions for obtaining a specified worked shape in a working apparatus can be simply and accurately determined.

Working shape prediction method, working requirement determination method, working method, working system, method of manufacturing semiconductor device, computer program, and computer program storage medium

Methods and apparatus for substantially continuously measuring the surface of a wafer during a polishing process are disclosed. According to one aspect of the present invention, an apparatus includes a wafer support table that supports a wafer, a polishing pad that polishes a surface of the wafer, and a polishing pad structure that rotates the polishing pad over the surface of the wafer. The apparatus also includes a measuring device which is capable of continuously measuring the surface of the wafer during polishing of the surface of the wafer.

Chemical mechanical polishing end point detection apparatus and method

Methods and apparatus are disclosed for detecting a thickness of a surficial layer (e.g., metal or insulating layer) on a workpiece (e.g., semiconductor wafer) during a process for planarizing the layer, so as to stop the process when a suitable process endpoint is reached. Layer thickness is detected based on a spectral-characteristic signal of reflected or transmitted signal light, obtained by directing a probe light onto the surface of the workpiece. Example spectral characteristics are local maxima and minima of signal-light waveform, differences or quotients of the same, a dispersion of the signal-light waveform, a component of a Fourier transform of the signal waveform, a cross-correlation function of the signal waveform. Alternatively, the zeroth order of signal light is selected for measurement, or a spatial coherence length of the probe light is compared with the degree of fineness of the pattern on the surface illuminated with the probe light. An optical model can be determined based on the comparison, and at least one of the layer thickness and the process endpoint is detected by comparing the measured signal-light intensity with the calculated theoretical signal light intensity.

Layer-thickness detection methods and apparatus for wafers and the like, and polishing apparatus comprising same

A detection apparatus for detecting the process end point in the removal process of a layer on a wafer in an IC or other semiconductor device manufacturing process. This point can be detected in-situ and at high precision even when there is a pattern on the surface, or when there is no distinct change in the polishing layer, or when there is disturbance caused by a difference in the detection position or the slurry. Two or more characteristic quantities are extracted from a signal waveform obtained by irradiating a substrate surface with white light and detecting the reflected signal light or the transmitted signal light or both, fuzzy rules, etc., are used in performing detection by using these two or more characteristic quantities to perform a logical operation, and tuning is performed.

Process end point detection apparatus and method, polishing apparatus, semiconductor device manufacturing method, and recording medium recorded with signal processing program

Methods and apparatus are disclosed for detecting a thickness of a surficial layer (e.g., metal or insulating layer) on a workpiece (e.g., semiconductor wafer) during a process for planarizing the layer, so as to stop the process when a suitable process endpoint is reached. Layer thickness is detected based on a spectral-characteristic signal of reflected or transmitted signal light, obtained by directing a probe light onto the surface of the workpiece. Example spectral characteristics are local maxima and minima of signal-light waveform, differences or quotients of the same, a dispersion of the signal-light waveform, a component of a Fourier transform of the signal waveform, a cross-correlation function of the signal waveform. Alternatively, the zeroth order of signal light is selected for measurement, or a spatial coherence length of the probe light is compared with the degree of fineness of the pattern on the surface illuminated with the probe light. An optical model can be determined based on the comparison, and at least one of the layer thickness and the process endpoint is detected by comparing the measured signal-light intensity with the calculated theoretical signal-light intensity.

Disclosed is a display device which comprises a pair of plate-like light transmittable members; a display member located so as to form a predetermined pattern between a pair of light transmittable members, the display member being composed of a material whose light transmittance is electrically changed; and a pair of light transmittable electrodes, at least one of a pair of light transmittable electrodes having a shape corresponding to the pattern, a pair of light transmittable electrodes being formed on a pair of light transmittable members and for electrically controlling the material. The camera having the display device comprises illuminating means for illuminating the display portion. The display portion is illuminated in accordance with a luminance of a subject. The illuminating light can be also used for measuring a distance and for illuminating another display element.

Display device and camera having the display device

Apparatus and methods are disclosed that measure the thickness of a layer on a workpiece such as a semiconductor wafer, especially as the layer is undergoing a process such as polishing to achieve planarization of the layer. The apparatus comprises a probe light optical system that directs a beam of probe light to be incident on a surface of the layer, and produce a signal light from reflection of the probe light from or transmission of the probe light through the layer. A light detector retrieves and detects sufficient wavelengths of the signal light to produce a corresponding electronic signal encoding data regarding the intensity at various wavelengths of the signal light. At least one of the following is monitored: appearance or disappearance of maxima or minima in a spectrum of intensity or transmittance of the signal light, a change in wavelength at which a maximum or minimum is located in the spectrum, and change in intensity at a particular wavelength at which a maximum or minimum is located in the spectrum. The apparatus can be included with a polishing apparatus.

Apparatus and methods for detecting thickness of a patterned layer

A method of manufacturing a liquid crystal display element having characteristics of voltage-transparency, and the like, which differ locally. The method of manufacturing the liquid crystal display device includes a step of injecting a mixture of photohardening resin and liquid crystal between two substrates, and a step of exposing the injected mixture to light which causes photohardening of the mixture. The step of exposing the mixture to light includes exposing at least two pattern regions which become different from each other under photohardening conditions.

Method of manufacture of liquid crystal display device having

A photographic recording apparatus capable of being small-sized and simplified in structure and reducing color aberration of an optical system. A refractive index distribution type lens array has a central axis arranged perpendicularly to a light emission direction of a fluorescent luminous tube. Light emitted from the fluorescent luminous tube passes through red (R), green (G) and blue (B) color filters, is incident on the lens array, is reflected on a first mirror and then is guided to a color film, resulting in forming an image on the color film. The fluorescent luminous tube is driven depending on data on R, G and B colors and the whole apparatus is moved with respect to the color film. The color filters are changed over and scan of the color film is carried out three times, so that an image of R, G and B colors may be formed on the color film.

Photographic recording apparatus

A controlling apparatus for a high frequency high voltage power source is disclosed which eliminates a switching loss of a high frequency invertor and allows adjustment of the output power to be performed continuously and accurately over a wide range. A resonance current of a resonance circuit of the high frequency high voltage power source is detected by current detection means, and a phase locked loop circuit locks itself with a frequency with which it coincides in phase with the resonance current to produce a synchronized pulse signal. From the pulse signal, a signal having a zero voltage outputting period of a preset duration is formed by a pulse density modulation circuit to change the pattern of a gate signal for switching semiconductor elements of a high frequency invertor to adjust the output power. An input voltage before a zero voltage outputting period is entered is stored into voltage storage means such as a sample and hold circuit so that the phase locked loop circuit may continue to lock with the same frequency also during the zero voltage outputting period.

Growing community of inventors

Tokyo, Japan

Takehiko Ueda